Publications

Due to the high intrinsic thermal conductivity of carbon allotropes, there have been many attempts to incorporate such structures into existing thermal abatement technologies. In particular, carbon nanotubes (CNTs) and graphitic materials (i.e., graphite and graphene flakes or stacks) have garnered much interest due to the combination of both their thermal and mechanical properties. However, the introduction of these carbon-based nanostructures into thermal abatement technologies greatly increases the number of interfaces per unit length within the resulting composite systems. Consequently, thermal transport in these systems is governed as much by the interfaces between the constituent materials as it is by the materials themselves. This paper reports the behavior of phononic thermal transport across interfaces between isotropic thin films and graphite substrates. Elastic and inelastic diffusive transport models are formulated to aid in the prediction of conductance at a metal-graphite interface. The temperature dependence of the thermal conductance at Au-graphite interfaces is measured via transient thermoreflectance from 78 to 400 K. It is found that different substrate surface preparations prior to thin film deposition have a significant effect on the conductance of the interface between film and substrate. © 2012 American Society of Mechanical Engineers.

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The overarching goal of this Truman LDRD project was to explore mechanisms of thermal transport at interfaces of nanomaterials, specifically linking the thermal conductivity and thermal boundary conductance to the structures and geometries of interfaces and boundaries. Deposition, fabrication, and post possessing procedures of nanocomposites and devices can give rise to interatomic mixing around interfaces of materials leading to stresses and imperfections that could affect heat transfer. An understanding of the physics of energy carrier scattering processes and their response to interfacial disorder will elucidate the potentials of applying these novel materials to next-generation high powered nanodevices and energy conversion applications. An additional goal of this project was to use the knowledge gained from linking interfacial structure to thermal transport in order to develop avenues to control, or 'tune' the thermal transport in nanosystems.

We investigate the role of anisotropy on interfacial transport across solid interfaces by measuring the thermal boundary conductance from 100 to 500 K across Al/Si and Al/sapphire interfaces with different substrate orientations. The measured thermal boundary conductances show a dependency on substrate crystallographic orientation in the sapphire samples (trigonal conventional cell) but not in the silicon samples (diamond cubic conventional cell). The change in interface conductance in the sapphire samples is ascribed to anisotropy in the Brillouin zone along the principal directions defining the conventional cell. This leads to resultant phonon velocities in the direction of thermal transport that vary nearly 40% based on crystallographic direction. © 2011 American Physical Society.

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We examine the fundamental phonon mechanisms affecting the interfacial thermal conductance across a single layer of quantum dots (QDs) on a planar substrate. We synthesize a series of GexSi1-x QDs by heteroepitaxial self-assembly on Si surfaces and modify the growth conditions to provide QD layers with different root-mean-square (rms) roughness levels in order to quantify the effects of roughness on thermal transport. We measure the thermal boundary conductance (hK) with time-domain thermoreflectance. The trends in thermal boundary conductance show that the effect of the QDs on hK are more apparent at elevated temperatures, while at low temperatures, the QD patterning does not drastically affect hK. The functional dependence of hK with rms surface roughness reveals a trend that suggests that both vibrational mismatch and changes in the localized phonon transport near the interface contribute to the reduction in h K. We find that QD structures with rms roughnesses greater than 4 nm decrease hK at Si interfaces by a factor of 1.6. We develop an analytical model for phonon transport at rough interfaces based on a diffusive scattering assumption and phonon attenuation that describes the measured trends in hK. This indicates that the observed reduction in thermal conductivity in SiGe quantum dot superlattices is primarily due to the increased physical roughness at the interfaces, which creates additional phonon resistive processes beyond the interfacial vibrational mismatch. © 2011 American Physical Society.

We measure the thermal boundary conductance across Al/Si and Al/ Al 2 O3 interfaces that are subjected to varying doses of proton ion implantation with time domain thermoreflectance. The proton irradiation creates a major reduction in the thermal boundary conductance that is much greater than the corresponding decrease in the thermal conductivities of both the Si and Al2 O3 substrates into which the ions were implanted. Specifically, the thermal boundary conductances decrease by over an order of magnitude, indicating that proton irradiation presents a unique method to systematically decrease the thermal boundary conductance at solid interfaces. © 2011 American Institute of Physics.

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Phononic crystals (PnCs) are acoustic devices composed of a periodic arrangement of scattering centers embedded in a homogeneous background matrix with a lattice spacing on the order of the acoustic wavelength. When properly designed, a superposition of Bragg and Mie resonant scattering in the crystal results in the opening of a frequency gap over which there can be no propagation of elastic waves in the crystal, regardless of direction. In a fashion reminiscent of photonic lattices, PnC patterning results in a controllable redistribution of the phononic density of states. This property makes PnCs a particularly attractive platform for manipulating phonon propagation. In this communication, we discuss the profound physical implications this has on the creation of novel thermal phenomena, including the alteration of the heat capacity and thermal conductivity of materials, resulting in high-ZT materials and highly-efficient thermoelectric cooling and energy harvesting. © 2011 SPIE.

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Thermoreflectance techniques are powerful tools for measuring thermophysical properties of thin film systems, such as thermal conductivity, Λ, of individual layers, or thermal boundary conductance across thin film interfaces (G). Thermoreflectance pump-probe experiments monitor the thermoreflectance change on the surface of a sample, which is related to the thermal properties in the sample of interest. Thermoreflectance setups have been designed with both continuous wave (cw) and pulsed laser systems. In cw systems, the phase of the heating event is monitored, and its response to the heating modulation frequency is related to the thermophysical properties; this technique is commonly termed a phase sensitive thermoreflectance (PSTR) technique. In pulsed laser systems, pump and probe pulses are temporally delayed relative to each other, and the decay in the thermoreflectance signal in response to the heating event is related to the thermophysical properties; this technique is commonly termed a transient thermoreflectance (TTR) technique. In this work, mathematical models are presented to be used with PSTR and TTR techniques to determine the Λ and G of thin films on substrate structures. The sensitivities of the models to various thermal and sample parameters are discussed, and the advantages and disadvantages of each technique are elucidated from the results of the model analyses. © 2010 Springer Science+Business Media, LLC.