Publications

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Thermal boundary conductance (TBC) is a performance determinant for many microsystems due to the numerous interfaces contained within their structure. To assess this transport, theoretical approaches often account for only the acoustic phonons as optical modes are assumed to contribute negligibly due to their low group velocities. To examine this approach, the diffuse mismatch model is reformulated to account for more realistic dispersions containing optical modes. Using this reformulation, it is found that optical phonons contribute to TBC by as much as 80% for a variety of material combinations in the limit of both inelastic and elastic scattering. © 2010 American Institute of Physics.

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Continued reduction of characteristic dimensions in nanosystems has given rise to increasing importance of material interfaces on the overall system performance. With regard to thermal transport, this increases the need for a better fundamental understanding of the processes affecting interfacial thermal transport, as characterized by the thermal boundary conductance. When thermal boundary conductance is driven by phononic scattering events, accurate predictions of interfacial transport must account for anharmonic phononic coupling as this affects the thermal transmission. In this paper, a new model for phononic thermal boundary conductance is developed that takes into account anharonic coupling, or inelastic scattering events, at the interface between two materials. Previous models for thermal boundary conductance are first reviewed, including the Diffuse Mismatch Model, which only consdiers elastic phonon scattering events, and earlier attempts to account for inelastic phonon scattering, namely, the Maximum Transmission Model and the Higher Harmonic Inelastic model. A new model is derived, the Anharmonic Inelastic Model, which provides a more physical consideration of the effects of inelastic scattering on thermal boundary conductance. This is accomplished by considering specific ranges of phonon frequency interactions and phonon number density conservation. Thus, this model considers the contributions of anharmonic, inelastically scattered phonons to thermal boundary conductance. This new Anharmonic Inelastic Model shows excellent agreement between model predictions and experimental data at the Pb/diamond interface due to its ability to account for the temperature dependent changing phonon population in diamond, which can couple anharmonically with multiple phonons in Pb.

Electron-interface scattering during electron-phonon nonequilibrium in thin films creates another pathway for electron system energy loss as characteristic lengths of thin films continue to decrease. As power densities in nanodevices increase, excitations of electrons from sub-conduction-band energy levels will become more probable. These sub-conduction-band electronic excitations significantly affect the material's thermophysical properties. In this work, the effects of d-band electronic excitations are considered in electron energy transfer processes in thin metal films. In thin films with thicknesses less than the electron mean free path, ballistic electron transport leads to electron-interface scattering. The ballistic component of electron transport, leading to electron-interface scattering, is studied by a ballistic-diffusive approximation of the Boltzmann Transport Equation. The effect of d-band excitations on electron-interface energy transfer is analyzed during electron-phonon nonequilibrium after short pulsed laser heating in thin films.

This model predicts thermal boundary conductance at interfaces where one material comprising the junction is characterized by high elastic anisotropy (i.e, graphite). The thermal properties of graphite are determined through a simplified vibrational model, where the bulk structure is treated as an linear assembly of two-dimensional systems. This model is validated at temperatures above cryogenic through comparison to experimentally determined values of specific heat. Elastic processes are accounted for through traditional diffuse transport theory. Inelastic contributions due to multi-phonon processes are also addressed and quantified.

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Thermal boundary resistance dominates the thermal resistance in nanosystems since material length scales are comparable to material mean free paths. The primary scattering mechanism in nanosystems is interface scattering, and the structure and composition around these interfaces can affect scattering rates and, therefore, device thermal resistances. In this work, the thermal boundary conductance (the inverse of the thermal boundary resistance) is measured using a pump-probe thermoreflectance technique on aluminum films grown on silicon substrates that are subjected to various pre-Al-deposition surface treatments. The Si surfaces are characterized with Atomic Force Microscopy (AFM) to determine mean surface roughness. The measured thermal boundary conductance decreases as Si surface roughness increases. In addition, stripping the native oxide layer on the surface of the Si substrate immediately prior to Al film deposition causes the thermal boundary conductance to increase. The measured data are then compared to an extension of the diffuse mismatch model that accounts for interfacial mixing and structure around the interface. © 2010 by ASME.

Electron-interface scattering during electron-phonon nonequilibrium in thin films creates another pathway for electron system energy loss as characteristic lengths of thin films continue to decrease. As power densities in nanodevices increase, excitations of electrons from sub-conduction-band energy levels will become more probable. These subconduction-band electronic excitations significantly affect the material's thermophysical properties. In this work, the effects of d-band electronic excitations are considered in electron energy transfer processes in thin metal films. In thin films with thicknesses less than the electron mean free path, ballistic electron transport leads to electron-interface scattering. The ballistic component of electron transport, leading to electron-interface scattering, is studied by a ballistic-diffusive approximation of the Boltzmann Transport Equation. The effects of d-band excitations on electron-interface energy transfer is analyzed during electron-phonon nonequilibrium after short pulsed laser heating in thin films. Copyright © 2009 by ASME.

Pump-probe transient thermoreflectance (TTR) techniques are powerful tools for measuring thermophysical properties of thin films, such as thermal conductivity, A, or thermal boundary conductance, G. TTR experimental setups rely on lock-in techniques to detect the response of the probe signal relative to the pump heating event. The temporal decays of the lock-in signal are then compared to thermal models to deduce the A and G in and across various materials. There are currently two thermal models that are used to relate the measured signals from the lock-in to the A and G in the sample of interest. In this work, the thermal models, their assumptions, and their ranges of applicability are compared. The advantages and disadvantages of each technique are elucidated from the results of the thermophysical property measurements. Copyright © 2009 by ASME.

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High-power electronics are central in the development of radar, solid-state lighting, and laser systems. Large powers, however, necessitate improved heat dissipation as heightened temperatures deleteriously affect both performance and reliability. Heat dissipation, in turn, is determined by the cascade of energy from the electronic to lattice system. Full characterization of the transport then requires analysis of each. In response, this four-month late start effort has developed a transient thermoreflectance (TTR) capability that probes the thermal response of electronic carriers with 100 fs resolution. Simultaneous characterization of the lattice carriers with this electronic assessment was then investigated by equipping the optical arrangement to acquire a Raman signal from radiation discarded during the TTR experiment. Initial results show only tentative acquisition of a Raman response at these timescales. Using simulations of the response, challenges responsible for these difficulties are then examined and indicate that with outlined refinements simultaneous acquisition of TTR/Raman signals remains attainable in the near term.