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Simultaneous electronic and lattice characterization using coupled femtosecond spectroscopic techniques

Serrano, Justin R.; Hopkins, Patrick E.

High-power electronics are central in the development of radar, solid-state lighting, and laser systems. Large powers, however, necessitate improved heat dissipation as heightened temperatures deleteriously affect both performance and reliability. Heat dissipation, in turn, is determined by the cascade of energy from the electronic to lattice system. Full characterization of the transport then requires analysis of each. In response, this four-month late start effort has developed a transient thermoreflectance (TTR) capability that probes the thermal response of electronic carriers with 100 fs resolution. Simultaneous characterization of the lattice carriers with this electronic assessment was then investigated by equipping the optical arrangement to acquire a Raman signal from radiation discarded during the TTR experiment. Initial results show only tentative acquisition of a Raman response at these timescales. Using simulations of the response, challenges responsible for these difficulties are then examined and indicate that with outlined refinements simultaneous acquisition of TTR/Raman signals remains attainable in the near term.

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Multiple phonon processes contributing to inelastic scattering during thermal boundary conductance at solid interfaces

Journal of Applied Physics

Hopkins, Patrick E.

A new model is developed that accounts for multiple phonon processes on interface transmission between two solids. By considering conservation of energy and phonon population, the decay of a high energy phonon in one material into several lower energy phonons in another material is modeled assuming diffuse scattering. The individual contributions of each of the higher order inelastic phonon processes to thermal boundary conductance are calculated and compared to the elastic contribution. The overall thermal boundary conductance from elastic and inelastic (three or more phonon processes) scattering is calculated and compared to experimental data on five different interfaces. Improvement in value and trend is observed by taking into account multiple phonon inelastic scattering. Three phonon interfacial processes are predicted to dominate the inelastic contribution to thermal boundary conductance. © 2009 American Institute of Physics.

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Thermal conductivity measurements on polysilicon microbridges using the 3-omega technique

2008 Proceedings of the ASME Micro/Nanoscale Heat Transfer International Conference, MNHT 2008

Hopkins, Patrick E.; Phinney, Leslie

The thermal properties of microelectromechanical systems (MEMS) devices are governed by the structure and composition of the constituent materials as well as the geometrical design. With the continued reduction of the characteristic sizes of these devices, experimental determination of the thermal properties becomes more difficult. In this study, the thermal conductivity of polycrystalline silicon (polysilicon) microbridges are measured with the transient 3ω technique and compared to measurements on the same structures using a steady state joule heating technique. The microbridges with lengths from 200 microns to 500 microns were designed and fabricated using the Sandia National Laboratories SUMMiT™ V surface micromachining process. The differences between the two measurements, which arise from the geometry of the test structures, are explained by bond pad heating and thermal boundary resistance effects. Copyright © 2008 by ASME.

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Results 51–61 of 61
Results 51–61 of 61