The objective of this work was to understand the fundamental physics of extremely high frequency RF effects on electronics. To accomplish this objective, we produced models, conducted simulations, and performed measurements to identify the mechanisms of effects as frequency increases into the millimeter-wave regime. Our purpose was to answer the questions, 'What are the tradeoffs between coupling, transmission losses, and device responses as frequency increases?', and, 'How high in frequency do effects on electronic systems continue to occur?' Using full wave electromagnetics codes and a transmission-line/circuit code, we investigated how extremely high-frequency RF propagates on wires and printed circuit board traces. We investigated both field-to-wire coupling and direct illumination of printed circuit boards to determine the significant mechanisms for inducing currents at device terminals. We measured coupling to wires and attenuation along wires for comparison to the simulations, looking at plane-wave coupling as it launches modes onto single and multiconductor structures. We simulated the response of discrete and integrated circuit semiconductor devices to those high-frequency currents and voltages, using SGFramework, the open-source General-purpose Semiconductor Simulator (gss), and Sandia's Charon semiconductor device physics codes. This report documents our findings.
This report describes the activities on the ''Ultra Miniaturization of RF'' project conducted as part of Sandia's Laboratory Directed Research and Development (LDRD) program. The objective was to evaluate a multichip module technology known as Microwave Chip on Flex (MCOF) [1], which is a newer form of the standard high density interconnect (HDI) technology originally developed by General Electric and Lockheed Martin [2,3]. The program was a three-year effort. In the first year, the team focused on understanding the technology and developing a basic design library. In the second year, devices and interconnects used at L, X, and Ku frequency bands were evaluated via a test coupon (with no application specific circuit design). In the third year, we designed, fabricated, and evaluated a specific Ku-band circuit. The circuit design and layout was performed by Sandia, and the module fabrication was performed by Lockheed Martin Government Electronic Systems. In MCOF technology [1], bare die are placed face down on an adhesive backed flex circuit. The first level of the circuit is a pre-patterned titanium copper thin film metal system on a polyimide dielectric material. The complete module is then framed and filled with an epoxy encapsulant. The module is flipped and via holes are laser drilled through subsequent interconnect layers. Each addition layer is adhered to the top of the module and laser drilling repeated. The baseline design consisted of the original pre-patterned layer plus two additional metal layers. The base of the module is then machined so the heat spreader and frame are planar for a good thermal and electrical connection to the next assembly. This report describes the efforts conducted to evaluate the technology and its applicability to Sandia RF systems.