Electron Spin Resonance of a Single Electron Spins in Silicon
Abstract not provided.
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Jump to search filtersProbing the limits of STM field-emission-patterned Si:P δ-doped devices
Abstract not provided.
Probing limits of STM field emission patterned Si:P $\delta$-doped devices
Applied Physics Letters
Abstract not provided.
Copy of SiGe HBT cryogenic preamplification for higher bandwidth donor spin read-out
Abstract not provided.
Spin Measurements of an Electron Bound to a Single Phosphorous Donor in Silicon
Abstract not provided.
Charge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot
Nano Letters
We report Pauli blockade in a multielectron silicon metal–oxide–semiconductor double quantum dot with an integrated charge sensor. The current is rectified up to a blockade energy of 0.18 ± 0.03 meV. The blockade energy is analogous to singlet–triplet splitting in a two electron double quantum dot. Built-in imbalances of tunnel rates in the MOS DQD obfuscate some edges of the bias triangles. A method to extract the bias triangles is described, and a numeric rate-equation simulation is used to understand the effect of tunneling imbalances and finite temperature on charge stability (honeycomb) diagram, in particular the identification of missing and shifting edges. A bound on relaxation time of the triplet-like state is also obtained from this measurement.
Manipulating single electrons in semiconductor devices for quantum computing
Abstract not provided.
Spontaneous emission spectrum of a diabatically pulsed silicon charge qubit
Nature Physics
Abstract not provided.
RF FPGA Annual Review: Programmable RF Acoustic Filter Elements
Abstract not provided.
Electron Spin Lifetime of a Single Antimony Donor in Silicon
Applied Physics Letters
Abstract not provided.
On/off Micro-electromechanical Switching of AlN Piezoelectric Resonators
Abstract not provided.
Pulsed Electron Transition Measurements in a Silicon Double Quantum Dot
Abstract not provided.
Reweighting of charge occupation incharge stability diagrams due to finite temperature effect and asymmetric tunnel ratesin a silicon MOS double quantum dot
Abstract not provided.
Measurements of spin lifetime of an antimony-bound electron in silicon
Abstract not provided.
On/off Micro-electromechanical Switching of AlN Piezoelectric Resonators
Abstract not provided.
A Programmable Bandwidth Aluminum Nitride Microresonator Filter
Abstract not provided.
Tuning the Bandwidth and Center Frequency of Micromechanical Acoustic Filters
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Measurements of Spin Life Time of an Antimony-Bound Electron in Silicon
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias
Abstract not provided.
Pulsed electron transition measurements in a silicon double quantum dot
Abstract not provided.
Electrometer sensitivity for spin readout
Abstract not provided.
Sandia National Laboratories SUMMiT VTM MEMS Process: Mature Technology with an Exciting Future
Abstract not provided.
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