Characterization of a Several Antimony Donor-SET system in Silicon
Abstract not provided.
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Jump to search filtersElectron Spin Resonance of a Single Electron Spins in Silicon
Abstract not provided.
Probing the limits of STM field-emission-patterned Si:P δ-doped devices
Abstract not provided.
Probing limits of STM field emission patterned Si:P $\delta$-doped devices
Applied Physics Letters
Abstract not provided.
Spin Measurements of an Electron Bound to a Single Phosphorous Donor in Silicon
Abstract not provided.
Copy of SiGe HBT cryogenic preamplification for higher bandwidth donor spin read-out
Abstract not provided.
Charge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot
Nano Letters
We report Pauli blockade in a multielectron silicon metal–oxide–semiconductor double quantum dot with an integrated charge sensor. The current is rectified up to a blockade energy of 0.18 ± 0.03 meV. The blockade energy is analogous to singlet–triplet splitting in a two electron double quantum dot. Built-in imbalances of tunnel rates in the MOS DQD obfuscate some edges of the bias triangles. A method to extract the bias triangles is described, and a numeric rate-equation simulation is used to understand the effect of tunneling imbalances and finite temperature on charge stability (honeycomb) diagram, in particular the identification of missing and shifting edges. A bound on relaxation time of the triplet-like state is also obtained from this measurement.
Manipulating single electrons in semiconductor devices for quantum computing
Abstract not provided.
Spontaneous emission spectrum of a diabatically pulsed silicon charge qubit
Nature Physics
Abstract not provided.
RF FPGA Annual Review: Programmable RF Acoustic Filter Elements
Abstract not provided.
Electron Spin Lifetime of a Single Antimony Donor in Silicon
Applied Physics Letters
Abstract not provided.
On/off Micro-electromechanical Switching of AlN Piezoelectric Resonators
Abstract not provided.
Pulsed Electron Transition Measurements in a Silicon Double Quantum Dot
Abstract not provided.
Reweighting of charge occupation incharge stability diagrams due to finite temperature effect and asymmetric tunnel ratesin a silicon MOS double quantum dot
Abstract not provided.
Measurements of spin lifetime of an antimony-bound electron in silicon
Abstract not provided.
On/off Micro-electromechanical Switching of AlN Piezoelectric Resonators
Abstract not provided.
A Programmable Bandwidth Aluminum Nitride Microresonator Filter
Abstract not provided.
Tuning the Bandwidth and Center Frequency of Micromechanical Acoustic Filters
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Measurements of Spin Life Time of an Antimony-Bound Electron in Silicon
Abstract not provided.
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias
Abstract not provided.
Pulsed electron transition measurements in a silicon double quantum dot
Abstract not provided.
Electrometer sensitivity for spin readout
Abstract not provided.
Results 76–100 of 122