Manipulating single electrons in semiconductor devices for quantum computing
Abstract not provided.
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Jump to search filtersEnabling Technologies for Single Electron Spin Resonance in Silicon
Abstract not provided.
Transport measurements on Silicon nanostructures with counted antimony donors
Abstract not provided.
Electron spin qubits using donors in silicon
Abstract not provided.
Development of Counted Single Donor Devices using in-situ Single Ion Detectors on the SNL NanoImplanter
Abstract not provided.
Cryogenic amplifiers for fast readout
Abstract not provided.
1D-1D Coulomb Drag Signature of a Luttinger Liquid
Abstract not provided.
Probing the limits of STM field-emission patterned Si:P δ-doped devices
Abstract not provided.
Cryogenic Preamplification using a Heterojunction-Bipolar-Transistor Inline with a Silicon Single-Electron-Transistor
Abstract not provided.
Characterization of a Several Antimony Donor-SET system in Silicon
Abstract not provided.
Electron Spin Resonance of a Single Electron Spins in Silicon
Abstract not provided.
Probing the limits of STM field-emission-patterned Si:P δ-doped devices
Abstract not provided.
SNL Detection Techniques for Low Energy Heavy Ions on the NanoImplanter
Abstract not provided.
Probing limits of STM field emission patterned Si:P $\delta$-doped devices
Applied Physics Letters
Abstract not provided.
[Response to PRL referee request for more information]
Sandia journal manuscript; Not yet accepted for publication
Abstract not provided.
Spin Measurements of an Electron Bound to a Single Phosphorous Donor in Silicon
Abstract not provided.
Copy of SiGe HBT cryogenic preamplification for higher bandwidth donor spin read-out
Abstract not provided.
Silicon nanostructures with antimony donors
Abstract not provided.
Measurement of mesoscopic Si:P delta-doped devices fabricated by rapid STM hydrogen desorption lithography
Abstract not provided.
Charge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot
Nano Letters
We report Pauli blockade in a multielectron silicon metal–oxide–semiconductor double quantum dot with an integrated charge sensor. The current is rectified up to a blockade energy of 0.18 ± 0.03 meV. The blockade energy is analogous to singlet–triplet splitting in a two electron double quantum dot. Built-in imbalances of tunnel rates in the MOS DQD obfuscate some edges of the bias triangles. A method to extract the bias triangles is described, and a numeric rate-equation simulation is used to understand the effect of tunneling imbalances and finite temperature on charge stability (honeycomb) diagram, in particular the identification of missing and shifting edges. A bound on relaxation time of the triplet-like state is also obtained from this measurement.
Si quantum dots with counted Sb donors
Abstract not provided.
Efficient self-consistent quantum transport simulation in complex geometry devices
Abstract not provided.
Efficient self-consistent quantum transport simulator for quantum devices
Journal of Applied Physics
Abstract not provided.
Towards long coherence time spin control for quantum information: Characterization of silicon quantum dots and micro-magnets integration
Abstract not provided.
Manipulating single electrons in semiconductor devices for quantum computing
Abstract not provided.
Results 101–125 of 220