The QCAD framework for quantum device modeling
Abstract not provided.
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Jump to search filtersThe QCAD framework for quantum device modeling
Computational Electronics (IWCE), 2012 15th International Workshop on
We present the Quantum Computer Aided Design (QCAD) simulator that targets modeling quantum devices, particularly Si double quantum dots (DQDs) developed for quantum computing. The simulator core includes Poisson, Schrodinger, and Configuration Interaction solvers which can be run individually or combined self-consistently. The simulator is built upon Sandia-developed Trilinos and Albany components, and is interfaced with the Dakota optimization tool. It is being developed for seamless integration, high flexibility and throughput, and is intended to be open source. The QCAD tool has been used to simulate a large number of fabricated silicon DQDs and has provided fast feedback for design comparison and optimization.
Quantum Decoherence of the Central Spin in a Sparse System of Dipolar Coupled Spins
Physical Review B
Abstract not provided.
On-line APD detectors for deterministic doping low energy single heavy atoms in silicon
Abstract not provided.
Semiconductor double quantum dot qubits for adiabatic quantum computing
Abstract not provided.
Modeling split gate tunnel barriers in lateral double top gated Si-MOS nanostructures
Abstract not provided.
Computer assisted design of poly-silicon gated enhancement-mode lateral double quantum dot devices for quantum computing
Abstract not provided.
Effect of fixed charge gate oxide defects on the exchange energy of a multi-valley silicon double quantum dot
Abstract not provided.
Optimization of Realistic Silicon Double Quantum Dots through Simulation
Abstract not provided.
Hybrid Donor-Dot Devices made using Top-down Ion Implantation for Quantum Computing
Abstract not provided.
Status of Top-down Ion Implantation for Sandia's Self-aligned Hybrid Donor-Dot Devices
Abstract not provided.
Detection of charge transitions in Sb implanted poly-silicon split gate point contact
Abstract not provided.
Configuration interaction calculations of the controlled phase gate in double quantum dot qubits
Physical Review B - Condensed Matter and Materials Physics
We consider qubit coupling resulting from the capacitive coupling between two double quantum dot (DQD) singlet-triplet qubits. Calculations of the coupling when the two DQDs are detuned symmetrically or asymmetrically are performed using a full configuration interaction (CI). The full CI reveals behavior that is not observed by more commonly used approximations such as Heitler London or Hund Mulliken, particularly related to the operation of both DQDs in the (0,2) charge sector. We find that there are multiple points in detuning space where a two-qubit entangling gate can be realized, and that tradeoffs between coupling magnitude and sensitivity to fluctuations in detuning make a case for operating the gate in the (0,2) regime not commonly considered. © 2012 American Physical Society.
High precision quantum device modeling using the atomistic tight-binding technique
Abstract not provided.
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias
Abstract not provided.
Status of Top-down Ion Implantation for Sandia's Self-aligned Hybrid Donor-Dot Devices
Abstract not provided.
Development of few-electron Si quantum dots for use as qubits
Abstract not provided.
Path to Deterministic Single Donor Devices using Focused Top-Down Ion Implantation
Abstract not provided.
Silicon enhancement mode nanostructures for quantum computing
Abstract not provided.
Spatial distribution of electrons on a super fluid helium charge-coupled device
Abstract not provided.
Enhancement-mode buried strained-silicon channel quantum dot with tunable lateral geometry
Abstract not provided.
Removal of Stacking Faults in Ge Grown on Si Through Nanoscale Openings in Chemical SiO2
Thin Solid Films
Abstract not provided.
Path to Deterministic Single Donor Devices using Focused Top-Down Ion Implantation
Abstract not provided.
Sensitivity of charge detection techniques in electrostatically defined MOS quantum dots
Abstract not provided.
Path Forward to Deterministic Single Ion Donor Devices using Top-Down Implantation
Abstract not provided.
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