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Room Temperature Deformation Mechanisms of Alumina Particles Observed from In Situ Micro-compression and Atomistic Simulations

Journal of Thermal Spray Technology

Sarobol, Pylin S.; Chandross, M.; Carroll, Jay D.; Mook, William M.; Bufford, Daniel C.; Boyce, Brad B.; Hattar, Khalid M.; Kotula, Paul G.; Hall, Aaron C.

Aerosol deposition (AD) is a solid-state deposition technology that has been developed to fabricate ceramic coatings nominally at room temperature. Sub-micron ceramic particles accelerated by pressurized gas impact, deform, and consolidate on substrates under vacuum. Ceramic particle consolidation in AD coatings is highly dependent on particle deformation and bonding; these behaviors are not well understood. In this work, atomistic simulations and in situ micro-compressions in the scanning electron microscope, and the transmission electron microscope (TEM) were utilized to investigate fundamental mechanisms responsible for plastic deformation/fracture of particles under applied compression. Results showed that highly defective micron-sized alumina particles, initially containing numerous dislocations or a grain boundary, exhibited no observable shape change before fracture/fragmentation. Simulations and experimental results indicated that particles containing a grain boundary only accommodate low strain energy per unit volume before crack nucleation and propagation. In contrast, nearly defect-free, sub-micron, single crystal alumina particles exhibited plastic deformation and fracture without fragmentation. Dislocation nucleation/motion, significant plastic deformation, and shape change were observed. Simulation and TEM in situ micro-compression results indicated that nearly defect-free particles accommodate high strain energy per unit volume associated with dislocation plasticity before fracture. The identified deformation mechanisms provide insight into feedstock design for AD.

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Cavity evolution at grain boundaries as a function of radiation damage and thermal conditions in nanocrystalline nickel

Materials Research Letters

Muntifering, Brittany R.; Blair, Sarah J.; Gong, Cajer; Dunn, Aaron; Dingreville, Remi P.; Qu, Jianmin; Hattar, Khalid M.

Enhanced radiation tolerance of nanostructured metals is attributed to the high density of interfaces that can absorb radiationinduced defects. Here, cavity evolution mechanisms during cascade damage, helium implantation, and annealing of nanocrystalline nickel are characterized via in situ transmission electron microscopy (TEM). Films subjected to self-ion irradiation followed by helium implantation developed evenly distributed cavity structures, whereas films exposed in the reversed order developed cavities preferentially distributed along grain boundaries. Post-irradiation annealing and orientation mapping demonstrated uniform cavity growth in the nanocrystalline structure, and cavities spanning multiple grains. These mechanisms suggest limited ability to reduce swelling, despite the stability of the nanostructure.

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Thickness and surface effects on abnormal grain growth in nanocrystalline nickel films

Proceedings of the 6th International Conference on Recrystallization and Grain Growth, ReX and GG 2016

Hattar, Khalid M.; Miller, Bryan; Robertson, Ian M.; Kacher, Josh

Nanostructured metal thin films have been shown to have unique thermal, mechanical, and electrical properties when the internal structure can be maintained. However, this far-from-equilibrium structure has been shown in many cases to be unstable at elevated temperatures. This work investigates the role of surface ledges, large nickel inclusions, electron beam exposure and film thickness on the evolution of high purity, pulsed-laser deposited, free-standing, nickel films via in situ transmission electron microscopy annealing. Grain growth appeared enhanced in a limited temperature range near surface ledges present in the film, but was not affected by large nickel inclusions. In addition, extended exposure to the electron beam resulted in abnormal grain growth. This was hypothesized to be a result of enhanced nickel oxide growth on the surfaces. Finally, increasing film thickness was observed to accelerate the onset of abnormal grain growth and increased the size and number of larger grains. These observations should provide warning that the initial and dynamic surface present in thin films should be taken under consideration during any annealing study, as it may significantly impact the final crystalline structure.

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Metastable Tantalum Oxide Formation During the Devitrification of Amorphous Tantalum Thin Films

Journal of the American Ceramic Society

Donaldson, Olivia K.; Hattar, Khalid M.; Trelewicz, Jason R.

Microstructural evolution during the devitrification of amorphous tantalum thin films synthesized via pulsed laser deposition was investigated using in situ transmission electron microscopy (TEM) combined with ex situ isothermal annealing, bright-field imaging, and electron-diffraction analysis. The phases formed during crystallization and their stability were characterized as a function of the chamber pressure during deposition, devitrification temperature, and annealing time. A range of metastable nanocrystalline tantalum oxides were identified following devitrification including multiple orthorhombic oxide phases, which often were present with, or evolved to, the tetragonal TaO2 phase. While the appearance of these phases indicated the films were evolving to the stable form of tantalum oxide—monoclinic tantalum pentoxide—it was likely not achieved for the conditions considered due to an insufficient amount of oxygen present in the films following deposition. Nevertheless, the collective in situ and ex situ TEM analysis applied to thin film samples enabled the isolation of a number of metastable tantalum oxides. New insights were gained into the transformation sequence and stability of these nanocrystalline phases, which presents opportunities for the development of advanced tantalum oxide-based dielectric materials for novel memristor designs.

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Unraveling irradiation induced grain growth with in situ transmission electron microscopy and coordinated modeling

Applied Physics Letters

Bufford, Daniel C.; Abdeljawad, Fadi F.; Foiles, Stephen M.; Hattar, Khalid M.

Nanostructuring has been proposed as a method to enhance radiation tolerance, but many metallic systems are rejected due to significant concerns regarding long term grain boundary and interface stability. This work utilized recent advancements in transmission electron microscopy (TEM) to quantitatively characterize the grain size, texture, and individual grain boundary character in a nanocrystalline gold model system before and after in situ TEM ion irradiation with 10 MeV Si. The initial experimental measurements were fed into a mesoscale phase field model, which incorporates the role of irradiation-induced thermal events on boundary properties, to directly compare the observed and simulated grain growth with varied parameters. The observed microstructure evolution deviated subtly from previously reported normal grain growth in which some boundaries remained essentially static. In broader terms, the combined experimental and modeling techniques presented herein provide future avenues to enhance quantification and prediction of the thermal, mechanical, or radiation stability of grain boundaries in nanostructured crystalline systems.

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Feasibility of Observing and Characterizing Single Ion Strikes in Microelectronic Components

Dingreville, Remi P.; Hattar, Khalid M.; Bufford, Daniel C.

The transient degradation of semiconductor device performance under irradiation has long been an issue of concern. A single high-energy charged particle can degrade or permanently destroy the microelectronic component, potentially altering the course or function of the systems. Disruption of the the crystalline structure through the introduction of quasi-stable defect structures can change properties from semiconductor to conductor. Typically, the initial defect formation phase is followed by a recovery phase in which defect-defect or defect-dopant interactions modify the characteristics of the damaged structure. In this LDRD Express, in-situ ion irradiation transmission microscopy (TEM) in-situ TEM experiments combined with atomistic simulations have been conducted to determine the feasibility of imaging and characterizing the defect structure resulting from a single cascade in silicon. In-situ TEM experiments have been conducted to demonstrate that a single ion strike can be observed in Si thin films with nanometer resolution in real time using the in-situ ion irradiation transmission electron microscope (I3TEM). Parallel to this experimental effort, ion implantation has been numerically simulated using Molecular Dynamics (MD). This numerical framework provides detailed predictions of the damage and follow the evolution of the damage during the first nanoseconds. The experimental results demonstrate that single ion strike can be observed in prototypical semiconductors.

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In-situ 3D characterization of He bubble and displacement damage in dense and nanoporous thin films

Hattar, Khalid M.; Robinson, David R.

This initial work attempted to determine the feasibility of using advanced in-situ, electron tomography, and precession electron diffraction techniques to determine the structural evolution that occurs during advanced aging of Pd films with nanometer resolution. To date, significant progress has been made in studying the cavity structures in sputtered, evaporated, and pulsed-laser deposited Pd films that result from both the deposition parameters, as well as from He ion implantation. In addition, preliminary work has been done to determine the feasibility of performing precession electron diffraction (PED) and electron tomography in these type of systems. Significant future work is needed to determine the proper conditions such that relevant advanced aging protocols can be developed.

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Results 376–400 of 612
Results 376–400 of 612