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Nonequilibrium transport in very high Landau levels

Journal of Physics: Conference Series

Zudov, M.A.; Hatke, A.T.; Chiang, H.S.; Pfeiffer, L.N.; West, K.W.; Reno, J.L.

Low temperature transport properties of high mobility two-dimensional electron systems placed in a weak perpendicular magnetic field can be modified dramatically by microwave or dc electric fields. This paper surveys recent experimental developments which include zero-differential resistance states, Hall field-induced resistance oscillations in tilted magnetic fields, nonlinear response of the Shubnikov-de Haas Oscillations, and a novel microwave photoconductivity peak near the second harmonic of the cyclotron resonance.

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Active infrared materials for beam steering

Shaner, Eric A.; Brener, Igal B.; Gin, Aaron G.; Reno, J.L.; Barrick, Todd A.

The mid-infrared (mid-IR, 3 {micro}m -12 {micro}m) is a highly desirable spectral range for imaging and environmental sensing. We propose to develop a new class of mid-IR devices, based on plasmonic and metamaterial concepts, that are dynamically controlled by tunable semiconductor plasma resonances. It is well known that any material resonance (phonons, excitons, electron plasma) impacts dielectric properties; our primary challenge is to implement the tuning of a semiconductor plasma resonance with a voltage bias. We have demonstrated passive tuning of both plasmonic and metamaterial structures in the mid-IR using semiconductors plasmas. In the mid-IR, semiconductor carrier densities on the order of 5E17cm{sup -3} to 2E18cm{sup -3} are desirable for tuning effects. Gate control of carrier densities at the high end of this range is at or near the limit of what has been demonstrated in literature for transistor style devices. Combined with the fact that we are exploiting the optical properties of the device layers, rather than electrical, we are entering into interesting territory that has not been significantly explored to date.

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Measuring THz QCL feedback using an integrated monolithic transceiver

Wanke, Michael W.; Nordquist, Christopher N.; Cich, Michael C.; Fuller, Charles T.; Reno, J.L.

THz quantum cascade lasers are of interest for use as solid-state local-oscillators in THz heterodyne receiver systems, especially for frequencies exceeding 2 THz and for use with non-cryogenic mixers which require mW power levels. Among other criteria, to be a good local oscillator, the laser must have a narrow linewidth and excellent frequency stability. Recent phase locking measurements of THz QCLs to high harmonics of microwave frequency reference sources as high as 2.7 THz demonstrate that the linewidth and frequency stability of QCLs can be more than adequate. Most reported THz receivers employing QCLs have used discrete source and detector components coupled via mechanically aligned free-space quasioptics. Unfortunately, retroreflections of the laser off of the detecting element can lead to deleterious feedback effects. Using a monolithically integrated transceiver with a Schottky diode monolithically integrated into a THz QCL, we have begun to explore the sensitivity of the laser performance to feedback due to retroreflections of the THz laser radiation. The transceiver allows us to monitor the beat frequency between internal Fabry-Perot modes of the QCL or between a QCL mode and external radiation incident on the transceiver. When some of the power from a free running Fabry-Perot type QCL is retroreflected with quasi-static optics we observe frequency pulling, mode splitting and chaos. Given the lack of calibrated frequency sources with sufficient stability and power to phase lock a QCL above a couple THz, attempts have been made to lock the absolute laser frequency by locking the beat frequency of a multimoded laser. We have phase locked the beat frequency between Fabry-Perot modes to an {approx}13 GHz microwave reference source with a linewidth less than 1 Hz, but did not see any improvment in stability of the absolute frequency of the laser. In this case, when some laser power is retroreflected back into the laser, the absolute frequency can be pulled significantly as a function of the external path length.

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Coulomb drag upturn in an undoped electron-hole bilayer in perpendicular and parallel magnetic fields

Reno, J.L.; Lilly, Michael L.

A low-temperature upturn of the Coulomb drag resistivity {rho}{sub D} measured in undoped electron-hole bilayer devices, possibly manifesting from formation of a superfluid condensate or density modulated state, was recently observed. Here the effects of perpendicular and parallel magnetic fields on the drag upturn are examined. Measurements of {rho}{sub D} and drive layer resistivity {rho}{sub xx-e} as a function of temperature and magnetic field in two uEHBL devices are presented. In B{sub {perpendicular}}, the drag upturn was enhanced as the field increased up to roughly .2 T, beyond which oscillations in {rho}{sub D} and {rho}{sub xx-e}, reflecting Landau level formation, begin appearing. A small phase offset between those oscillations, which decreased at higher fields and temperatures, was also observed. In B{sub {parallel}}, the drag upturn magnitude diminished as the field increased. Above the upturn regime, both {rho}{sub D} and {rho}{sub xx-e} were enhanced by B{sub {parallel}}, the latter via decreased screening of the uniform background impurities.

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Novel antenna coupled 2D plasmonic terahertz detection

Shaner, Eric A.; Reno, J.L.

Resonant plasmonic detectors are potentially important for terahertz (THz) spectroscopic imaging. We have fabricated and characterized antenna coupled detectors that integrate a broad-band antenna, which improves coupling of THz radiation. The vertex of the antenna contains the tuning gates and the bolometric barrier gate. Incident THz radiation may excite 2D plasmons with wave-vectors defined by either a periodic grating gate or a plasmonic cavity determined by ohmic contacts and gate terminals. The latter approach of exciting plasmons in a cavity defined by a short micron-scale channel appears most promising. With this short-channel geometry, we have observed multiple harmonics of THz plasmons. At 20 K with detector bias optimized we report responsivity on resonance of 2.5 kV/W and an NEP of 5 x 10{sup -10} W/Hz{sup 1/2}.

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THz transceiver characterization : LDRD project 139363 final report

Lee, Mark L.; Wanke, Michael W.; Nordquist, Christopher N.; Cich, Michael C.; Wendt, J.R.; Fuller, Charles T.; Reno, J.L.

LDRD Project 139363 supported experiments to quantify the performance characteristics of monolithically integrated Schottky diode + quantum cascade laser (QCL) heterodyne mixers at terahertz (THz) frequencies. These integrated mixers are the first all-semiconductor THz devices to successfully incorporate a rectifying diode directly into the optical waveguide of a QCL, obviating the conventional optical coupling between a THz local oscillator and rectifier in a heterodyne mixer system. This integrated mixer was shown to function as a true heterodyne receiver of an externally received THz signal, a breakthrough which may lead to more widespread acceptance of this new THz technology paradigm. In addition, questions about QCL mode shifting in response to temperature, bias, and external feedback, and to what extent internal frequency locking can improve stability have been answered under this project.

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Plasmonic enhanced ultrafast switch

Shaner, Eric A.; Passmore, Brandon S.; Barrick, Todd A.; Subramania, Ganapathi S.; Reno, J.L.

Ultrafast electronic switches fabricated from defective material have been used for several decades in order to produce picosecond electrical transients and TeraHertz radiation. Due to the ultrashort recombination time in the photoconductor materials used, these switches are inefficient and are ultimately limited by the amount of optical power that can be applied to the switch before self-destruction. The goal of this work is to create ultrafast (sub-picosecond response) photoconductive switches on GaAs that are enhanced through plasmonic coupling structures. Here, the plasmonic coupler primarily plays the role of being a radiation condenser which will cause carriers to be generated adjacent to metallic electrodes where they can more efficiently be collected.

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Terahertz-based target typing

Shaner, Eric A.; Barrick, Todd A.; Lyo, S.K.; Reno, J.L.; Wanke, Michael W.

The purpose of this work was to create a THz component set and understanding to aid in the rapid analysis of transient events. This includes the development of fast, tunable, THz detectors, along with filter components for use with standard detectors and accompanying models to simulate detonation signatures. The signature effort was crucial in order to know the spectral range to target for detection. Our approach for frequency agile detection was to utilize plasmons in the channel of a specially designed field-effect transistor called the grating-gate detector. Grating-gate detectors exhibit narrow-linewidth, broad spectral tunability through application of a gate bias, and no angular dependence in their photoresponse. As such, if suitable sensitivity can be attained, they are viable candidates for Terahertz multi-spectral focal plane arrays.

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Results 226–250 of 343
Results 226–250 of 343