Despite their wide use in terahertz (THz) research and technology, the application spectra of photoconductive antenna (PCA) THz detectors are severely limited due to the relatively high optical gating power requirement. This originates from poor conversion efficiency of optical gate beam photons to photocurrent in materials with subpicosecond carrier lifetimes. Here we show that using an ultra-thin (160 nm), perfectly absorbing low-temperature grown GaAs metasurface as the photoconductive channel drastically improves the efficiency of THz PCA detectors. This is achieved through perfect absorption of the gate beam in a significantly reduced photoconductive volume, enabled by the metasurface. This Letter demonstrates that sensitive THz PCA detection is possible using optical gate powers as low as 5 μW-three orders of magnitude lower than gating powers used for conventionalPCAdetectors.We show that significantly higher optical gate powers are not necessary for optimal operation, as they do not improve the sensitivity to the THz field. This class of efficient PCA THz detectors opens doors for THz applications with low gate power requirements.
We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map out the complete spectra of the two-hole system. By performing measurements in both source-drain voltage directions, at different detunings and magnetic fields, we carry out quantitative fitting to a Hubbard two-site model accounting for the tunnel coupling to the leads and the spin-flip relaxation process. We extract the singlet-triplet gap and the magnetic field corresponding to the singlet-triplet transition in the double-hole ground state. Additionally, at the singlet-triplet transition we find a resonant enhancement (in the blockaded direction) and suppression of current (in the conduction direction). The current enhancement stems from the multiple resonance of two-hole levels, opening several conduction channels at once. The current suppression arises from the quantum interference of spin-conserving and spin-flipping tunneling processes.
We report a detailed study of the tunnel barriers within a single-hole GaAs/AlGaAs double quantum dot device (DQD). For quantum information applications as well as fundamental studies, careful tuning and reliable measurements of the barriers are important requirements. In order to tune a DQD device adequately into the single-hole electric dipole spin resonance regime, one has to employ a variety of techniques to cover the extended range of tunnel couplings. In this work, we demonstrate four separate techniques, based upon charge sensing, quantum transport, time-resolved pulsing, and electron dipole spin resonance spectroscopy to determine the couplings as a function of relevant gate voltages and magnetic field. Measurements were performed under conditions of both symmetric and asymmetric tunnel couplings to the leads. Good agreement was observed between different techniques when measured under the same conditions. The results indicate that even in this relatively simple circuit, the requirement to tune multiple gates and the consequences of real potential profiles result in non-intuitive dependencies of the couplings as a function of the plunger gate voltage and the magnetic field.
There is rapidly expanding interest in exploiting the spin of valence-band holes rather than conduction-band electrons for spin qubit semiconductor circuits composed of coupled quantum dots. The hole platform offers stronger spin-orbit interaction (SOI), large difference between in-dot-plane and out-of-dot-plane g-factors, i.e. g-factor anisotropy, and a significantly reduced hyperfine coupling to nuclei in the host material. These attributes collectively can deliver fast all-electric coherent spin manipulation, efficient spin-flip inter-dot tunneling channels, a voltage tunable effective g-factor, a g-factor adjustable to nearly zero in an appropriately oriented external magnetic field, and long spin relaxation and coherence times. Here, we review our recent work on the physics of heavy holes confined in a planar GaAs/AlGaAs double quantum dot system with strong SOI. For a single-hole, we have performed resonant tunneling magneto-spectroscopy to extract spin-flip and spin-conserving tunneling strengths, implemented spin-flip Landau-Zener-Stückelberg-Majorana (LZSM) interferometry, determined the spin relaxation time T 1 as a function of magnetic field using a fast single-shot latched charge technique, electrically tuned the effective g-factor revealed by electric dipole spin resonance, and found signatures of the hyperfine interaction and dynamic nuclear polarization with holes. For two-holes, we have measured the energy spectrum in the presence of strong SOI (and so not limited by Pauli spin blockade), quantified the heavy-hole (HH) g-factor anisotropy on tilting the magnetic field, described a scheme to employ HHs whose g-factor is tunable to nearly zero for an in-plane magnetic field for a coherent photon-to-spin interface, and observed a well-defined LZSM interference pattern at small magnetic fields on pulsing through the singlet-triplet anti-crossing.
Addamane, Sadhvikas J.; Laurain, Alexandre; Baker, Caleb W.; Rotter, Thomas J.; Watt, John; Reno, J.L.; Balakrishnan, Ganesh; Moloney, Jerome V.
Semiconductor saturable absorber mirrors (SESAMs) enable passive modelocking of several ultrafast solid-state lasers. Conventionally, SESAMs in the 1-µm wavelength range have employed InGaAs quantum wells (QWs) as absorbers. Here we demonstrate a SESAM based on InAs/GaAs submonolayer quantum dots (SML QDs) capable of generating femtosecond pulses by passively modelocking a vertical-external-cavity surface-emitting laser (VECSEL). Structural measurements are carried out to verify the quality and composition of the QDs. Modelocking experiments with a VECSEL and the QD SESAM in a ring cavity configuration yield pulses as short as 185 fs at 1025 nm. Compared to a traditional QW absorber, SML QD SESAMs exhibit ~ 25% faster recovery times. This also translates to slower power degradation rates or higher damage thresholds in SML QD SESAMs.
We present in this paper the results from a recent study on the stability of the quantum Hall skyrmions state at a Landau level filling factor (ν) close to ν = 1 in a narrow GaAs quantum well. Consistent with previous work, a resonant behavior is observed in the resistively detected NMR measurements. In the subsequent current-voltage (I-V) measurements to examine its breakdown behavior under radio frequency radiations, we observe that the critical current assumes the largest value right at the 75As nuclear resonant frequency. We discuss possible origin for this unexpectedly enhanced stability.
Not long ago, it was shown that a discrete time crystal can be realized if a quantum system is periodically driven to a non-equilibrium state. Proof-of-concept experiments are reported by two groups using trapped ions and nitrogen-vacancy centers in diamond, respectively. The concept of discrete time crystals vividly demonstrates that the coherence time of a quantum system may be enhanced by driving the system out of equilibrium. In this project, we want to test this novel concept in another canonical quantum system, the quantum Hall system in a two-dimensional electron gas (2DEG). Compared to other systems, quantum Hall magnetism (QHM) in high quality, industry-compatible GaAs/AlGaAs heterostructures allows for detailed and quantitative studies in a particularly simple and clean environment. This detailed knowledge should help achieve longer coherence times in a driven QHM system. This report will detail the results from a recent study on the stability of the quantum Hall skyrmions (QHS) state at a Landau level filling close to ν = 1 by measuring its current-voltage (I-V) breakdown characteristics under radio-frequency (RF) radiations. We observe that the critical current increases visibly when the RF frequency is right at the Larmor frequency of 75As nuclei, where the hyperfine interaction between electron and nuclear spins perturbs the QHS state most significantly. We believe that this observation is consistent with the novel concept that the coherence time of a quantum system may be enhanced by driving the system out of equilibrium.
Curwen, Christopher A.; Reno, J.L.; Williams, Benjamin S.
We report a terahertz quantum-cascade vertical-external-cavity surface-emitting laser (QC-VECSEL) based upon a metasurface consisting of an array of gain-loaded resonant patch antennas. Compared with the typical ridge-based metasurfaces previously used for QC-VECSELs, the patch antenna surface can be designed with a much sparser fill factor of gain material, which allows for reduced heat dissipation and improved thermal performance. It also exhibits larger amplification thanks to enhanced interaction between the incident radiation and the QC-gain material. We demonstrate devices that produce several milliwatts of continuous-wave power in a single mode at ∼4.6 THz and dissipate less than 1 W of pump power. Use of different output couplers demonstrates the ability to optimize device performance for either high power or high operating temperature. Maximum demonstrated power is 6.7 mW at 4 K (0.67% wall-plug efficiency, WPE) and 0.8 mW at 77 K (0.06% WPE). Directive output beams are measured throughout with divergence angles of ∼5°.
Terahertz laser frequency combs based on quantum cascade lasers provide coherent, broadband, electrically pumped, THz radiation sources for use in future spectroscopic applications. Here, we explore the feasibility of such lasers in a dual-comb spectroscopy configuration for the detection of multiple molecular samples in the gas phase. The lasers span approximately 180 GHz of optical bandwidth, centered at 3.4 THz, with submilliwatt total optical power. One of the main advantages of dual-comb spectroscopy is its high speed, which opens up the possibility for direct observations of chemical reaction dynamics in the terahertz spectral region. As a proof-of-concept, we recorded continuously evolving spectra from gas mixtures with 1 ms temporal resolution.
In this work, we investigate cascaded third harmonic generation in a dielectric metasurface by exploiting high quality factor Fano resonances obtained using broken symmetry unit cells.
We design a resonant metasurface that uses Mie quadrupole modes to suppress the-1 diffraction order. We show that this suppression can be spectrally tuned using optical pumping on a picosecond timescale.
Terahertz semiconductor quantum-cascade lasers (QCLs) are widely implemented with metallic cavities that support low-loss plasmonic optical modes at long wavelengths. However, resonant optical modes in such cavities suffer from poor radiative characteristics due to their subwavelength transverse dimensions. Consequently, single-mode terahertz QCLs with metallic cavities and large (> 100 mW) output power have only been realized in the surface-emitting configuration that affords a large radiating surface. Here, we demonstrate a method to enhance radiative outcoupling from such plasmonic lasers for high-power emission in the edge-emitting (end-fire or longitudinal) direction. Single-sided plasmon waves propagating in vacuum are resonantly excited in surrounding medium of metallic cavities with the QCL semiconductor medium. The vacuum guided plasmon waves with a large wavefront phase-lock multiple metallic cavities longitudinally, which leads to intense radiation in multiple directions, including that in the longitudinal direction in a narrow single-lobed beam. The multicavity array radiates predominantly in a single spectral mode. A peak-power output of 260 mW and a slope efficiency of 303 mW/A are measured for the end-fire beam from a 3.3 THz QCL operating at 54 K in a Stirling cooler. Single-mode operation and lithographic tuning across a bandwidth of ∼ 150 GHz are demonstrated.
Scattering due to interface-roughness (IR) and longitudinal-optical (LO) phonons are primary transport mechanisms in terahertz quantum-cascade lasers (QCLs). By choosing GaAs/Al0.10Ga0.90As heterostructures with short-barriers, the effect of IR scattering is mitigated, leading to low operating current-densities. A series of resonant-phonon terahertz QCLs developed over time, achieving some of the lowest threshold and peak current-densities among published terahertz QCLs with maximum operating temperatures above 100 K. The best result is obtained for a three-well 3.1 THz QCL with threshold and peak current-densities of 134 A/cm2 and 208 A/cm2 respectively at 53 K, and a maximum lasing temperature of 135 K. Another three-well QCL designed for broadband bidirectional operation achieved lasing in a combined frequency range of 3.1-3.7 THz operating under both positive and negative polarities, with an operating current-density range of 167-322 A/cm2 at 53 K and maximum lasing temperature of 141 K or 121 K depending on the polarity of the applied bias. By showing results from QCLs developed over a period of time, here we show conclusively that short-barrier terahertz QCLs are effective in achieving low current-density operation at the cost of a reduction in peak temperature performance.
Curwen, Christopher A.; Reno, J.L.; Williams, Benjamin S.
Changing the length of a laser cavity is a simple technique for continuously tuning the wavelength of a laser but is rarely used for broad fractional tuning, with a notable exception of the vertical-cavity surface-emitting laser (VCSEL)1,2. This is because, to avoid mode hopping, the cavity must be kept optically short to ensure a large free spectral range compared to the gain bandwidth of the amplifying material. Terahertz quantum-cascade lasers are ideal candidates for such a short cavity scheme as they demonstrate exceptional gain bandwidths (up to octave spanning)3 and can be integrated with broadband amplifying metasurfaces4. We present such a quantum-cascade metasurface-based vertical-external-cavity surface-emitting laser (VECSEL) that exhibits over 20% continuous fractional tuning of a single laser mode. Such tuning is possible because the metasurface has subwavelength thickness, which allows lasing on low-order Fabry–Pérot cavity modes. Good beam quality and high output power are simultaneously obtained.
Hole spins have recently emerged as attractive candidates for solid-state qubits for quantum computing. Their state can be manipulated electrically by taking advantage of the strong spin-orbit interaction (SOI). Crucially, these systems promise longer spin coherence lifetimes owing to their weak interactions with nuclear spins as compared to electron spin qubits. Here we measure the spin relaxation time T1 of a single hole in a GaAs gated lateral double quantum dot device. We propose a protocol converting the spin state into long-lived charge configurations by the SOI-assisted spin-flip tunneling between dots. By interrogating the system with a charge detector we extract the magnetic-field dependence of T1 ∝ B−5 for fields larger than B = 0.5 T, suggesting the phonon-assisted Dresselhaus SOI as the relaxation channel. This coupling limits the measured values of T1 from ~400 ns at B = 1.5 T up to ~60 μs at B = 0.5 T.