We have investigated the physics of Bloch oscillations (BO) of electrons, engineered in high mobility quantum wells patterned into lateral periodic arrays of nanostructures, i.e. two-dimensional (2D) quantum dot superlattices (QDSLs). A BO occurs when an electron moves out of the Brillouin zone (BZ) in response to a DC electric field, passing back into the BZ on the opposite side. This results in quantum oscillations of the electron--i.e., a high frequency AC current in response to a DC voltage. Thus, engineering a BO will yield continuously electrically tunable high-frequency sources (and detectors) for sensor applications, and be a physics tour-de-force. More than a decade ago, Bloch oscillation (BO) was observed in a quantum well superlattice (QWSL) in short-pulse optical experiments. However, its potential as electrically biased high frequency source and detector so far has not been realized. This is partially due to fast damping of BO in QWSLs. In this project, we have investigated the possibility of improving the stability of BO by fabricating lateral superlattices of periodic coupled nanostructures, such as metal grid, quantum (anti)dots arrays, in high quality GaAs/Al{sub x}Ga{sub 1-x}As heterostructures. In these nanostructures, the lateral quantum confinement has been shown theoretically to suppress the optical-phonon scattering, believed to be the main mechanism for fast damping of BO in QWSLs. Over the last three years, we have made great progress toward demonstrating Bloch oscillations in QDSLs. In the first two years of this project, we studied the negative differential conductance and the Bloch radiation induced edge-magnetoplasmon resonance. Recently, in collaboration with Prof. Kono's group at Rice University, we investigated the time-domain THz magneto-spectroscopy measurements in QDSLs and two-dimensional electron systems. A surprising DC electrical field induced THz phase flip was observed. More measurements are planned to investigate this phenomenon. In addition to their potential device applications, periodic arrays of nanostructures have also exhibited interesting quantum phenomena, such as a possible transition from a quantum Hall ferromagnetic state to a quantum Hall spin glass state. It is our belief that this project has generated and will continue to make important impacts in basic science as well as in novel solid-state, high frequency electronic device applications.
Split grating-gate field effect transistors (FETs) detectors made from high mobility quantum well two-dimensional electron gas material have been shown to exhibit greatly improved tunable resonant photoresponse compared to single grating-gate detectors due to the formation of a 'diode-like' element by the split-gate structure. These detectors are relatively large for FETs (1mm × 1mm area or larger) to match typical focused THz beam spot sizes. In the case where the focused THz spot size is smaller than the detector area, we have found evidence, through positional scanning of the detector element, that only a small portion of the detector is active. To further investigate this situation, detectors with the same channel width (1mm), but various channel lengths, were fabricated and tested. The results indicate that indeed, only a small portion of the split grating gated FET is active. This finding opens up the possibility for further enhancement of detector sensitivity by increasing the active area.
The purpose of this work was to develop a wavelength tunable detector for Terahertz spectroscopy and imaging. Our approach was to utilize plasmons in the channel of a specially designed field-effect transistor called the grating-gate detector. Grating-gate detectors exhibit narrow-linewidth, broad spectral tunability through application of a gate bias, and no angular dependence in their photoresponse. As such, if suitable sensitivity can be attained, they are viable candidates for Terahertz multi-spectral focal plane arrays. When this work began, grating-gate gate detectors, while having many promising characteristics, had a noise-equivalent power (NEP) of only 10{sup -5} W/{radical}Hz. Over the duration of this project, we have obtained a true NEP of 10{sup -8} W/{radical}Hz and a scaled NEP of 10{sup -9}W/{radical}Hz. The ultimate goal for these detectors is to reach a NEP in the 10{sup -9{yields}-10}W/{radical}Hz range; we have not yet seen a roadblock to continued improvement.