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Comparison of Gain Degradation and Deep Level Transient Spectroscopy in pnp Si Bipolar Junction Transistors Irradiated With Different Ion Species

IEEE Transactions on Nuclear Science

Aguirre, Brandon A.; Bielejec, Edward S.; Fleming, R.M.; Vizkelethy, Gyorgy; Vaandrager, Bastiaan L.; Campbell, J.; Martin, William J.; King, D.B.

We studied the effect of light ion and heavy ion irradiations on pnp Si BJTs. A mismatch in DLTS deep peak amplitude for devices with same final gain but irradiated with different ion species was observed. Also, different ions cause different gain degradation when the DLTS spectra are matched. Pre-dosed ion-irradiated samples show that ion induced ionization does not account for the differences in DLTS peak height but isochronal annealing studies suggest that light ions produce more VP defects than heavy ions to compensate for the lack of clusters that heavy ions produce. The creation of defect clusters by heavy ions is evident by the higher content of E4 and V2∗ defects compared to light ions.

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TYPE Conference Poster YEAR 2017
DOIOSTIScopus

The anatomy of the minority carrier - atomic cluster interaction in semiconductors

Doyle, Barney L.; Auden, Elizabeth C.; Bielejec, Edward S.; Abraham, John B.S.; Vizkelethy, Gyorgy

This project was to use light ion beam induced charge (IBIC) to detect damage cascades generated by a single heavy ion, and thereby reveal details of the shape of the cascade and the physics of recombination of carriers that interact with the cluster. Further IBIC measurements using the hardware and software of this project will improve the accuracy of theoretical models used to predict electrical degradation in devices exposed to radiation environments. In addition, future use of light ion IBIC detection of single ion-induced damage could be used to locate single ion implantation sites in quantum computing applications. This project used Sandia's Pelletron and nanoImplanter (nI) to produce heavy ion-induced collision cascades in p-n diodes, simulating cascades made by primary knock-on atoms recoiled by neutrons. Si and Li beams from the nI were used to perform highly focused scans generating IBIC signal maps where regions of lower charge collection efficiency were observed without incurring further damage. The very first use of ion channeled beams for IBIC was explored to maximize ionization, improve contrast and provide very straight line trajectories to improve lateral resolution.

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TYPE SAND Report YEAR 2016
DOIOSTI

Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

Applied Physics Letters

Abraham, John B.S.; Pacheco, Jose L.; Aguirre, Brandon A.; Vizkelethy, Gyorgy; Bielejec, Edward S.

We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. In conclusion, the ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantation process.

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TYPE Journal Article YEAR 2016
DOIOSTI
Results 151–175 of 299
Results 151–175 of 299
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