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High voltage and high current density vertical GaN power diodes

Electronics Letters

Armstrong, Andrew A.; Allerman, A.A.; Fischer, Arthur J.; King, Michael P.; Van Heukelom, Michael V.; Moseley, M.W.; Kaplar, Robert K.; Wierer, J.J.; Crawford, Mary H.; Dickerson, Jeramy R.

We report on the realization of a GaN high voltage vertical p-n diode operating at > 3.9 kV breakdown with a specific on-resistance < 0.9 mΩ.cm2. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density > 1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. Furthermore this suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.

More Details
TYPE Journal Article YEAR 2016
DOIOSTI
Results 26–35 of 35
Results 26–35 of 35