Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs at High Temperatures
Abstract not provided.
Publications
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Jump to search filtersEffect of Interaction of Deep Levels with Quantum Well States on Stress-Time-Dependant Trap Response in High-Voltage AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices
Abstract not provided.
PV Inverter Bus Capacitor Testing
Abstract not provided.
A Photocapacitance Decay Technique for Interface Trap Characterization near Inversion Band in Wide Bandgap MOS Capacitors
IEEE Transactions on Electron Devices
Abstract not provided.
Deposition Control and Depth Profiling in TaOx Memristors
Abstract not provided.
Rutherford Forward Scattering and Elastic Recoil Detection (RFSERD) as a Method for Characterizing Ultra-Thin Films
Abstract not provided.
Dynamics of Percolative Breakdown Mechanism in Tantalum Oxide ReRAM Switching
Transactions on Electron Devices
Abstract not provided.
Development of an Integrated Memristor/CMOS Process for Neuromorphic Applications
Abstract not provided.
Performance and Reliability Characterization of 1200 V Silicon Carbide Power MOSFETs at High Temperatures
Abstract not provided.
A CMOS Compatible Forming Free TaOx ReRAM
Abstract not provided.
Improving Memristor Performance Through Materials Characterization
Abstract not provided.
Evidence of a Percolative Breakdown Mechanism in Tantalum Oxide ReRAM Switching
IEEE Electron Device Letters
Abstract not provided.
Effect of Interaction with Quantum Well States on Response Times for Deep Level Defects in AlGaN/GaN HEMTs
Abstract not provided.
Total Ionizing Dose and Displacement Damage Effects in Embedded Memory Technologies (Tutorial Notes - Draft 1)
Abstract not provided.
Radiation Effects on TaOx ReRAM: A Candidate for Rad-Hard Memory
Abstract not provided.
Influence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs
Abstract not provided.
Nitride Memristors
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Emerging Memory Technologies: IRPS Tutorial
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The Future of Memory
Abstract not provided.
Total Ionizing Dose and Displacement Damage Effects on TaOx Memristive Memories
Abstract not provided.
2013 ERD Memory Planning
Abstract not provided.
2013 ERD Memory Planning - updated from last weeks telecon
Abstract not provided.
Some Basic Mechanisms in Memristor Calculations
Abstract not provided.
Wide-Bandgap Power Semiconductor Research at Sandia National Laboratories
Abstract not provided.
Combining Rutherford Forward Scattering with Elastic Recoil Detection in a Single Detector (RFSERD)*
Abstract not provided.
Results 301–325 of 374