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Dosimetry experiments at the MEDUSA Facility (Little Mountain)

Harper-Slaboszewicz, V.H.; Hartman, Elmer F.; Shaneyfelt, Marty R.; Schwank, James R.; Sheridan, Timothy J.

A series of experiments on the MEDUSA linear accelerator radiation test facility were performed to evaluate the difference in dose measured using different methods. Significant differences in dosimeter-measured radiation dose were observed for the different dosimeter types for the same radiation environments, and the results are compared and discussed in this report.

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Effects of moisture on radiation-induced degradation in CMOS SOI transistors

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Shaneyfelt, Marty R.; Schwank, James R.; Dodd, Paul E.; Hill, Thomas A.; Swanson, Scot E.

The effects of moisture on radiation-induced charge buildup in the oxides of a 0.35 m SOI technology are explored. Data show no observable effects of moisture-related aging on radiation hardness. These results are in contrast to those of previous work performed on bulk MOS technologies fabricated in the 1980s. The cause of these differences do not appear to be due to differences in final chip passivation layers. Instead, other processing variables (including the use of different implant materials and thicker overlayers) may account for these differences. In any case, the SOI technology results indicate that not all advanced technologies exposed to moisture are necessarily susceptible to significant long-term radiation-induced aging effects. © 2009 IEEE.

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Hardness assurance test guideline for qualifying devices for use in proton environments

IEEE Transactions on Nuclear Science

Schwank, James R.; Shaneyfelt, Marty R.; Dodd, Paul E.; Felix, James A.; Baggio, J.; Ferlet-Cavrois, V.; Paillet, P.; Label, K.A.; Pease, R.L.; Simons, M.; Cohn, L.M.

Proton-induced singl -event effects hardness assurance guidelines are developed to address issues raised by recent test results in advanced IC technologies for use in space environments. Specifically, guidelines are developed that address the effects of proton energy and angle of incidence on single-event latchup and the effects of total dose on single-event upset. The guidelines address both single-event upset (SEU), single-event latchup (SEL), and combined SEU and total ionizing dose (TID) effects. © 2006 IEEE.

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Total ionizing dose and single event effects hardness assurance qualification issues for microelectronics

IEEE Transactions on Nuclear Science

Shaneyfelt, Marty R.; Schwank, James R.; Dodd, Paul E.; Felix, James A.

The radiation effects community has developed a number of hardness assurance test guidelines to assess and assure the radiation hardness of integrated circuits for use in space and/or high-energy particle accelerator applications. These include test guidelines for total dose hardness assurance qualification and single event effects (SEE) qualification. In this work, issues associated with these hardness assurance test guidelines are discussed. For total dose qualification, the main test methodologies used in the U.S. and Europe are reviewed and differences between the guidelines are discussed. In addition, some key issues that must be considered when performing total dose hardness assurance testing are addressed. Following these discussions we review some emerging issues relevant to SEE device qualification that are not covered in present SEE test guidelines. The hardness assurance implications of these issues are addressed. © 2008 IEEE.

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Total ionizing dose effects in NOR and NAND flash memories

IEEE Transactions on Nuclear Science

Cellere, Giorgio; Paccagnella, Alessandro; Visconti, Angelo; Bonanomi, Mauro; Beltrami, S.; Schwank, James R.; Shaneyfelt, Marty R.; Paillet, Philippe

We irradiated floating gate (FG) memories with NOR and NAND architecture by using different TID sources, including 2 MeV, 98 MeV, and 105 MeV protons, X-rays, and γ-rays. Two classes of phenomena are responsible for charge loss from programmed FGs: the first is charge generation, recombination, and transport in the dielectrics, while the second is the emission of electrons above the oxide band. Charge loss from programmed FGs irradiated with protons of different energy closely tracks results from γ-rays, whereas the use of X-rays results in dose enhancement effects. © 2007 IEEE.

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Results 51–75 of 140
Results 51–75 of 140