Measurement of mesoscopic Si:P delta-doped devices fabricated by rapid STM hydrogen desorption lithography
Abstract not provided.
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Jump to search filtersCharge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot
Nano Letters
We report Pauli blockade in a multielectron silicon metal–oxide–semiconductor double quantum dot with an integrated charge sensor. The current is rectified up to a blockade energy of 0.18 ± 0.03 meV. The blockade energy is analogous to singlet–triplet splitting in a two electron double quantum dot. Built-in imbalances of tunnel rates in the MOS DQD obfuscate some edges of the bias triangles. A method to extract the bias triangles is described, and a numeric rate-equation simulation is used to understand the effect of tunneling imbalances and finite temperature on charge stability (honeycomb) diagram, in particular the identification of missing and shifting edges. A bound on relaxation time of the triplet-like state is also obtained from this measurement.
Si quantum dots with counted Sb donors
Abstract not provided.
Efficient self-consistent quantum transport simulation in complex geometry devices
Abstract not provided.
Efficient self-consistent quantum transport simulator for quantum devices
Journal of Applied Physics
Abstract not provided.
Towards long coherence time spin control for quantum information: Characterization of silicon quantum dots and micro-magnets integration
Abstract not provided.
Manipulating single electrons in semiconductor devices for quantum computing
Abstract not provided.
Advanced Nanofabrication of Single Donor Devices using Top-Down Implantation
Abstract not provided.
Spontaneous emission spectrum of a diabatically pulsed silicon charge qubit
Nature Physics
Abstract not provided.
Integrated nanotechnology for Si quantum computing
Abstract not provided.
Theory and experiments for silicon based quantum computing
Abstract not provided.
QCAD Simulation and Optimization of Semiconductor Quantum Dots
Journal of Applied Physics
Abstract not provided.
Silicon qubits for quantum computing
Abstract not provided.
Electron Spin Lifetime of a Single Antimony Donor in Silicon
Applied Physics Letters
Abstract not provided.
Silicon qubits for quantum computation
Abstract not provided.
The QCAD Framework for Quantum Device Modeling
Abstract not provided.
Efficient Self-Consistent Quantum Transport Simulator for Quantum Well Devices
Abstract not provided.
Fabrication of Single Donor Devices for Quantum Computation using Focused Top-Down Ion Implantation
Abstract not provided.
Pulsed Electron Transition Measurements in a Silicon Double Quantum Dot
Abstract not provided.
Reweighting of charge occupation incharge stability diagrams due to finite temperature effect and asymmetric tunnel ratesin a silicon MOS double quantum dot
Abstract not provided.
Single donor devices for 1 and 2 electron spin qubits in silicon
Abstract not provided.
Distinguishing adiabaticity from relaxation in a Si double quantum dot charge qubit
Abstract not provided.
Dynamically corrected gates for singlet-triplet spin qubits with control-dependent errors
Abstract not provided.
Measurements of spin lifetime of an antimony-bound electron in silicon
Abstract not provided.
Controlled deterministic Implantation at the limit of ion straggle by nanostencil lithography
Abstract not provided.
Results 176–200 of 334