Manipulating single electrons in semiconductor devices for quantum computing
Abstract not provided.
Publications
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Jump to search filtersElectron Spin Lifetime of a Single Antimony Donor in Silicon
Applied Physics Letters
Abstract not provided.
Pulsed Electron Transition Measurements in a Silicon Double Quantum Dot
Abstract not provided.
Measurements of spin lifetime of an antimony-bound electron in silicon
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
The QCAD Framework for Quantum Device Modeling
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
Measurements of Spin Life Time of an Antimony-Bound Electron in Silicon
Abstract not provided.
Silicon-Based Low-Dimensional Electronic Devices: Fabrication Characterization and their Physical Behavior in the Quantum Regime
Abstract not provided.
The QCAD Framework for Quantum Device Modeling
Abstract not provided.
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias
Abstract not provided.
Pulsed electron transition measurements in a silicon double quantum dot
Abstract not provided.
Electrometer sensitivity for spin readout
Abstract not provided.
Computer assisted design of poly-silicon gated enhancement-mode lateral double quantum dot devices for quantum computing
Abstract not provided.
Development of few-electron Si quantum dots for use as qubits
Abstract not provided.
Enhancement-mode buried strained-silicon channel quantum dot with tunable lateral geometry
Abstract not provided.
Sensitivity of charge detection techniques in electrostatically defined MOS quantum dots
Abstract not provided.
Transport and Charge Sensing for MOS and SiGe Quantum Dot Devices
Abstract not provided.
Sensitivity of charge detection techniques in electrostatically defined MOS quantum dots
Abstract not provided.
Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance
Abstract not provided.
High-Mobility 2D Hole Systems for Quantum Computing Applications
Abstract not provided.
Enhancement-mode buried strained-silicon channel double quantum dot
Abstract not provided.
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry
Applied Physics Letters
Abstract not provided.
Triangulating tunneling resonances in a point contact
NanoLetters?
Abstract not provided.
A comparison of electrostatic simulations to measurements of quantum dot structures
We have compared simulations using solutions of Poisson's equation to detailed capacitance measurements on a double quantum dot structure. We tabulate the results and show which cases show good agreement and which do not. The capacitance values are also compared to those calculated by a solution of Laplace's equation. Electron density is plotted and discussed. In order to understand relevant potential barriers we compare simulations at 50 Kelvin to simulations at 15 Kelvin. We show that the charge density does not differ greatly, but that the conduction band potential does. However, a method of estimating the potential at 0 Kelvin based on the charge distribution at 50 Kelvin is shown to be close to the potential at 15 Kelvin. This method was used to estimate potential barriers at 0 Kelvin in two quantum dot structures.
Results 101–125 of 139