Publications

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We demonstrate the active tuning of all-dielectric metasurfaces exhibiting high-quality factor (high-Q) resonances. The active control is provided by embedding the asymmetric silicon meta-atoms with liquid crystals, which allows the relative index of refraction to be controlled through heating. It is found that high quality factor resonances (Q = 270 ± 30) can be tuned over more than three resonance widths. Our results demonstrate the feasibility of using all-dielectric metasurfaces to construct tunable narrow-band filters.

Dielectric metasurfaces that exploit the different Mie resonances of nanoscale dielectric resonators are a powerful platform for manipulating electromagnetic fields and can provide novel optical behavior. In this work, we experimentally demonstrate independent tuning of the magnetic dipole resonances relative to the electric dipole resonances of split dielectric resonators (SDRs). By increasing the split dimension, we observe a blue shift of the magnetic dipole resonance toward the electric dipole resonance. Therefore, SDRs provide the ability to directly control the interaction between the two dipole resonances within the same resonator. For example, we achieve the first Kerker condition by spectrally overlapping the electric and magnetic dipole resonances and observe significantly suppressed backward scattering. Moreover, we show that a single SDR can be used as an optical nanoantenna that provides strong unidirectional emission from an electric dipole source.

Ultrafast control of the polarization state of light may enable a plethora of applications in optics, chemistry and biology. However, conventional polarizing elements, such as polarizers and waveplates, are either static or possess only gigahertz switching speeds. Here, with the aid of high-mobility indium-doped cadmium oxide (CdO) as the gateway plasmonic material, we realize a high-quality factor Berreman-type perfect absorber at a wavelength of 2.08 μm. On sub-bandgap optical pumping, the perfect absorption resonance strongly redshifts because of the transient increase of the ensemble-averaged effective electron mass of CdO, which leads to an absolute change in the p-polarized reflectance from 1.0 to 86.3%. By combining the exceedingly high modulation depth with the polarization selectivity of the perfect absorber, we experimentally demonstrate a reflective polarizer with a polarization extinction ratio of 91 that can be switched on and off within 800 fs.

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We demonstrate electrical tuning of the spectral response of a Mie-resonant dielectric metasurface consisting of silicon nanodisks embedded into liquid crystals. We use the reorientation of nematic liquid crystals in a moderate applied electric field to alter the anisotropic permittivity tensor around the metasurface. By switching a control voltage “on” and “off,” we induce a large spectral shift of the metasurface resonances, resulting in an absolute transmission modulation of up to 75%. Our experimental demonstration of voltage control of dielectric metasurfaces paves the way for new types of electrically tunable metadevices, including dynamic displays and holograms.

We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core-shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core-shell nanowires, despite significantly shorter cavity lengths and reduced active region volume. Mode simulations show that due to the core-shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. The results show the viability of this p-i-n nonpolar core-shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV-visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.

Terahertz (THz) double-metal plasmonic resonators enable enhanced light-matter coupling by exploiting strong field confinement. The double-metal design however restricts access to the internal fields. We propose and demonstrate a method for spatial mapping and spectroscopic analysis of the internal electromagnetic fields in double-metal plasmonic resonators. We use the concept of image charges and aperture-type scanning near-field THz time-domain microscopy to probe the fields confined within the closed resonator. The experimental method opens doors to studies of light-matter coupling in deeply sub-wavelength volumes at THz frequencies.

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The efficiency of photoconductive (PC) devices, including terahertz detectors, is constrained by the bulk optical constants of PC materials. Here, we show that optical absorption in a PC layer can be modified substantially within a hybrid cavity containing nanoantennas and a Distributed Bragg Reflector. We find that a hybrid cavity, consisting of a GaAs PC layer of just 50 nm, can be used to absorb >75% of incident photons by trapping the light within the cavity. We provide an intuitive model, which describes the dependence of the optimum operation wavelength on the cavity thickness. We also find that the nanoantenna size is a critical parameter, small variations of which lead to both wavelength shifting and reduced absorption in the cavity, suggesting that impedance matching is key for achieving efficient absorption in the optically thin hybrid cavities.

We demonstrate the ultrafast formation of terahertz (THz) metasurfaces through all-optical creation of spatially modulated carrier density profiles in a deep-subwavelength GaAs film. The switch-on of the transient plasmon mode, governed by the GaAs effective electron mass and electron− phonon interactions, is revealed by structured-optical pump THz probe spectroscopy, on a time scale of 500 fs. By modulating the carrier density using different pump fluences, we observe a wide tuning of the electric dipole resonance of the transient GaAs metasurface from 0.5 THz to 1.7 THz. Furthermore, we numerically demonstrate that the metasurface presented here can be generalized to more complex architectures for realizing functionalities such as perfect absorption, leading to a 30 dB modulation depth. The platform also provides a pathway to achieve ultrafast manipulation of infrared beams in the linear and, potentially, nonlinear regime.

Using III-V dielectric metasurfaces, we experimentally demonstrate resonantly enhanced harmonic generations up to the 4th order. Moreover, we observe large enhancements and spectral tailoring of the photoluminescence of quantum dots embedded inside dielectric metasurfaces.

We experimentally demonstrate high-contrast, ultrafast switching of infrared light at 2.1 μm via intraband pumping of a high quality factor perfect absorber made from a highly doped cadmium oxide thin film.

Second order nonlinearity vanishes for centrosymmetric materials in the dipole approximation. For metamaterial this means second-harmonic-generation is negligible in highly symmetric meta-atoms. We show a new type of meta-atom in which the dipolar approximation breaks down.

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