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Proceedings of SPIE - The International Society for Optical Engineering
Wang, George T.; Li, Qiming L.; Wierer, Jonathan W.; Figiel, J.J.; Wright, Jeremy B.; Luk, Ting S.; Brener, Igal B.
Although planar heterostructures dominate current optoelectronic architectures, 1D nanowires and nanorods have distinct and advantageous properties that may enable higher efficiency, longer wavelength, and cheaper devices. We have developed a top-down approach for fabricating ordered arrays of high quality GaN-based nanorods with controllable height, pitch and diameter. This approach avoids many of the limitations of bottom-up synthesis methods. In addition to GaN nanorods, the fabrication and characterization of both axial and radial-type GaN/InGaN nanorod LEDs have been achieved. The precise control over nanorod geometry achiveable by this technique also enables single-mode single nanowire lasing with linewidths of less than 0.1 nm and low lasing thresholds of ∼250kW/cm 2. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).
Wright, Jeremy B.; Coltrin, Michael E.; Brener, Igal B.; Luk, Ting S.; Li, Qiming L.; Wang, George T.; Subramania, Ganapathi S.; Chow, Weng W.; Huang, Jian Y.; Fischer, Arthur J.
Wright, Jeremy B.; Figiel, J.J.; Brener, Igal B.; Huang, Jian Y.; Armstrong, Andrew A.; Koleske, Daniel K.; Li, Qiming L.; Luk, Ting S.; Wang, George T.; Wierer, Jonathan W.
Fischer, Arthur J.; Wright, Jeremy B.; Brener, Igal B.; Chow, Weng W.; Koleske, Daniel K.; Li, Qiming L.; Luk, Ting S.; Tsao, Jeffrey Y.; Wang, George T.; Wierer, Jonathan W.
Wright, Jeremy B.; Wang, George T.; Chow, Weng W.; Li, Qiming L.; Luk, Ting S.; Brener, Igal B.
Wang, George T.
Proposed for publication in Applied Physics Letters.
Li, Qiming L.; Figiel, J.J.; Wang, George T.
Armstrong, Andrew A.; Henry, Tania A.; Crawford, Mary H.; Koleske, Daniel K.; Li, Qiming L.; Lee, Stephen R.; Wang, George T.
Proposed for publication in ACS Nano.
Wang, George T.; Li, Qiming L.
Subramania, Ganapathi S.; Li, Qiming L.; Figiel, J.J.; Wang, George T.; Fischer, Arthur J.
Wang, George T.; Li, Qiming L.; Wierer, Jonathan W.; Figiel, J.J.; Wright, Jeremy B.; Luk, Ting S.; Brener, Igal B.
IEEE Photonic Society 24th Annual Meeting, PHO 2011
Wright, J.B.; Li, Q.M.; Luk, Ting S.; Brener, Igal B.; Wang, George T.; Westlake, K.R.; Lester, L.F.
We study lasing in individual top-down fabricated GaN nanowires by optical pumping. We observe single mode emission with a side mode suppression of 15 dB, linewidths of less than 1 nm and thresholds as low as 250 kW/cm 2. © 2011 IEEE.
Li, Qiming L.; Brener, Igal B.; Luk, Ting S.; Chow, Weng W.; Wang, George T.
Wright, Jeremy B.; Wang, George T.; Chow, Weng W.; Li, Qiming L.; Luk, Ting S.; Brener, Igal B.
Crawford, Mary H.; Coltrin, Michael E.; Simmons, J.A.; Tsao, Jeffrey Y.; Koleske, Daniel K.; Chow, Weng W.; Wang, George T.; Li, Qiming L.; Armstrong, Andrew A.; Cederberg, Jeffrey G.
Wang, George T.
Wang, George T.
Li, Qiming L.; Wang, George T.; Wright, Jeremy B.; Brener, Igal B.; Luk, Ting S.
Li, Qiming L.; Cross, Karen C.; Figiel, J.J.; Wang, George T.; Wright, Jeremy B.; Brener, Igal B.; Luk, Ting S.; Crawford, Mary H.; Subramania, Ganapathi S.; Koleske, Daniel K.; Wierer, Jonathan W.
Wang, George T.
Nano Letters
Huang, Jian Y.; Zheng, He; Mao, S.X.; Li, Qiming L.; Wang, George T.
The deformation, fracture mechanisms, and the fracture strength of individual GaN nanowires were measured in real time using a transmission electron microscope-scanning probe microscope (TEM-SPM) platform. Surface mediated plasticity, such as dislocation nucleation from a free surface and plastic deformation between the SPM probe (the punch) and the nanowire contact surface were observed in situ. Although local plasticity was observed frequently, global plasticity was not observed, indicating the overall brittle nature of this material. Dislocation nucleation and propagation is a precursor before the fracture event, but the fracture surface shows brittle characteristic. The fracture surface is not straight but kinked at (10-10) or (10-11) planes. Dislocations are generated at a stress near the fracture strength of the nanowire, which ranges from 0.21 to 1.76 GPa. The results assess the mechanical properties of GaN nanowires and may provide important insight into the design of GaN nanowire devices for electronic and optoelectronic applications. © 2011 American Chemical Society.
Nano Letters
Leonard, Francois L.; Wong, Bryan M.; Li, Qiming L.; Wang, George T.
Applied Physics Letters
Wang, George T.; Li, Qiming L.
Wang, George T.; Li, Qiming L.; Huang, Jian Y.; Wierer, Jonathan W.; Armstrong, Andrew A.
Biefeld, Robert M.; Okandan, Murat O.; Cruz-Campa, Jose L.; Resnick, Paul J.; Pluym, Tammy P.; Clews, Peggy J.; Sweatt, W.C.; Gupta, Vipin P.; Cederberg, Jeffrey G.; Wierer, Jonathan W.; Wang, George T.; Li, Qiming L.; Koleske, Daniel K.; Fischer, Arthur J.; Nielson, Gregory N.
Results 201–225 of 273