3-D Mapping of Quantum Wells in a GaN/InGaN Core-Shell Nanowire Light Emitting Diode Array
Nano Letters
Abstract not provided.
Publications
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Jump to search filtersTunable Blue-Violet III-Nitride Nanowire Photonic Crystal Lasers
Abstract not provided.
Mode Control in Gallium Nitride Nanowire Lasers
Abstract not provided.
Polarization Manipulation of GaN Nanowire Lasers
Abstract not provided.
Multi-Color Arrays of Nanowire Photonic Crystal Laser Pixels
Nature Nanotechnology
Abstract not provided.
Deep Level Defect Spectroscopy in Reduced Dimension Semiconductor Materials and Devices (invited)
Abstract not provided.
Microsphere-Templated Gallium Nitride (GaN)
Abstract not provided.
GaN distributed feedback nanowire lasers
Abstract not provided.
Tunable Blue-Violet III-Nitride Nanowire Photonic Crystal Laserss
Abstract not provided.
III-Nitride Nanowires for Solid-State Lighting (invited)
Abstract not provided.
Multi-Color III-Nitride Photonic Crystal Nanowire Laser Array on a Single Chip
Abstract not provided.
Polarization Properties of GaN Nanowire Lasers
Abstract not provided.
Gold Substrate-Induced Single-Mode Lasing of GaN Nanowires
Proposed for publication in Applied Physics Letters.
Abstract not provided.
III-Nitride Solar Cells (invited)
Abstract not provided.
The Influence of Radial Heterostructuring on Carrier Dynamics in GaN Nanowires
Proposed for publication in Applied Physics Letters.
Abstract not provided.
III-nitride core-shell nanowire arrayed solar cells
Abstract not provided.
Nanofabrication of tunable nanowire lasers via electron and ion-beam based techniques
Abstract not provided.
III-Nitride Nanowires: From the Bottom-Up to the Top-Down (invited)
Abstract not provided.
Single-mode GaN nanowire lasers
Optics Express
We demonstrate stable, single-frequency output from single, asfabricated GaN nanowire lasers operating far above lasing threshold. Each laser is a linear, double-facet GaN nanowire functioning as gain medium and optical resonator, fabricated by a top-down technique that exploits a tunable dry etch plus anisotropic wet etch for precise control of the nanowire dimensions and high material gain. A single-mode linewidth of ∼0.12 nm and >18dB side-mode suppression ratio are measured. Numerical simulations indicate that single-mode lasing arises from strong mode competition and narrow gain bandwidth. © 2012 Optical Society of America.
III-Nitride Nanowires: Novel Materials for Lighting and Photovoltaics
Abstract not provided.
Single-Mode GaN Nanowire Lasers
Abstract not provided.
Gallium Nitride Single-Mode Nanowire Lasers
Abstract not provided.
Gallium nitride based logpile photonic crystals for visible lighting
Proceedings of SPIE - The International Society for Optical Engineering
Photonic crystals (PC) can fundamentally alter the emission behavior of light sources by suitably modifying the electromagnetic environment around them. Strong modulation of the photonic density of states especially by full threedimensional (3D) bandgap PCs, enables one to completely suppress emission in undesired wavelengths and directions while enhancing desired emission. This property of 3DPC to control spontaneous emission, opens up new regimes of light-matter interaction in particular, energy efficient and high brightness visible lighting. Therefore a 3DPC composed entirely of gallinum nitride (GaN), a key material used in visible light emitting diodes can dramatically impact solid state lighting. The following work demonstrates an all GaN logpile 3DPC with bandgap in the visible fabricated by a template directed epitaxial growth. © 2012 SPIE.
Fabrication and Characterization of Vertically-Integrated III-Nitride Nanowire-Based LEDs and Solar Cells
Abstract not provided.
Single Mode GaN Nanowire Lasers
Abstract not provided.
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