Nop, Gavin N.; Smith, Jonathan D.H.; Paudyal, Durga; Stick, Daniel L.
Junctions are fundamental elements that support qubit locomotion in two-dimensional ion trap arrays and enhance connectivity in emerging trapped-ion quantum computers. In surface ion traps they have typically been implemented by shaping radio frequency (RF) electrodes in a single plane to minimize the disturbance to the pseudopotential. However, this method introduces issues related to RF lead routing that can increase power dissipation and the likelihood of voltage breakdown. Here, we propose and simulate a novel two-layer junction design incorporating two perpendicularly rotoreflected (rotated, then reflected) linear ion traps. The traps are vertically separated, and create a trapping potential between their respective planes. The orthogonal orientation of the RF electrodes of each trap relative to the other provides perpendicular axes of confinement that can be used to realize transport in two dimensions. While this design introduces manufacturing and operating challenges, as now two separate structures have to be precisely positioned relative to each other in the vertical direction and optical access from the top is obscured, it obviates the need to route RF leads below the top surface of the trap and eliminates the pseudopotential bumps that occur in typical junctions. In this paper the stability of idealized ion transfer in the new configuration is demonstrated, both by solving the Mathieu equation analytically to identify the stable regions and by numerically modeling ion dynamics. Our novel junction layout has the potential to enhance the flexibility of microfabricated ion trap control to enable large-scale trapped-ion quantum computing.
Experiments with trapped ions and neutral atoms typically employ optical modulators in order to control the phase, frequency, and amplitude of light directed to individual atoms. These elements are expensive, bulky, consume substantial power, and often rely on free-space I/O channels, all of which pose scaling challenges. To support many-ion systems like trapped-ion quantum computers or miniaturized deployable devices like clocks and sensors, these elements must ultimately be microfabricated, ideally monolithically with the trap to avoid losses associated with optical coupling between physically separate components. In this work we design, fabricate, and test an optical modulator capable of monolithic integration with a surface-electrode ion trap. These devices consist of piezo-optomechanical photonic integrated circuits configured as multi-stage Mach-Zehnder modulators that are used to control the intensity of light delivered to a single trapped ion on a separate chip. We use quantum tomography employing hundreds of multi-gate sequences to enhance the sensitivity of the fidelity to the types and magnitudes of gate errors relevant to quantum computing and better characterize the performance of the modulators, ultimately measuring single qubit gate fidelities that exceed 99.7%.
Electronic control systems used for quantum computing have become increasingly complex as multiple qubit technologies employ larger numbers of qubits with higher fidelity target. Whereas the control systems for different technologies share some similarities, parameters, such as pulse duration, throughput, real-time feedback, and latency requirements, vary widely depending on the qubit type. In this article, we evaluate the performance of modern system-on-chip (SoC) architectures in meeting the control demands associated with performing quantum gates on trapped-ion qubits, particularly focusing on communication within the SoC. A principal focus of this article is the data transfer latency and throughput of several high-speed on-chip mechanisms on Xilinx multiprocessor SoCs, including those that utilize direct memory access (DMA). They are measured and evaluated to determine an upper bound on the time required to reconfigure a gate parameter. Worst-case and average-case bandwidth requirements for a custom gate sequencer core are compared with the experimental results. The lowest variability, highest throughput data-transfer mechanism is DMA between the real-time processing unit (RPU) and the programmable logic, where bandwidths up to 19.2 GB/s are possible. For context, this enables the reconfiguration of qubit gates in less than 2 μs, comparable to the fastest gate time. Though this article focuses on trapped-ion control systems, the gate abstraction scheme and measured communication rates are applicable to a broad range of quantum computing technologies.
Shuttling ions at high speed and with low motional excitation is essential for realizing fast and high-fidelity algorithms in many trapped-ion-based quantum computing architectures. Achieving such performance is challenging due to the sensitivity of an ion to electric fields and the unknown and imperfect environmental and control variables that create them. Here we implement a closed-loop optimization of the voltage waveforms that control the trajectory and axial frequency of an ion during transport in order to minimize the final motional excitation. The resulting waveforms realize fast round-trip transport of a trapped ion across multiple electrodes at speeds of 0.5 electrodes per microsecond (35 m·s−1 for a one-way transport of 210 μm in 6 μs) with a maximum of 0.36 ± 0.08 mean quanta gain. This sub-quanta gain is independent of the phase of the secular motion at the distal location, obviating the need for an electric field impulse or time delay to eliminate the coherent motion.
Entangling gates in trapped-ion quantum computers are most often applied to stationary ions with initial motional distributions that are thermal and close to the ground state, while those demonstrations that involve transport generally use sympathetic cooling to reinitialize the motional state prior to applying a gate. Future systems with more ions, however, will face greater nonthermal excitation due to increased amounts of ion transport and exacerbated by longer operational times and variations over the trap array. In addition, pregate sympathetic cooling may be limited due to time costs and laser access constraints. In this paper, we analyze the impact of such coherent motional excitation on entangling-gate error by performing simulations of Mølmer-Sørenson (MS) gates on a pair of trapped-ion qubits with both thermal and coherent excitation present in a shared motional mode at the start of the gate. We quantify how a small amount of coherent displacement erodes gate performance in the presence of experimental noise, and we demonstrate that adjusting the relative phase between the initial coherent displacement and the displacement induced by the gate or using Walsh modulation can suppress this error. We then use experimental data from transported ions to analyze the impact of coherent displacement on MS-gate error under realistic conditions.
As trapped ion systems add more ions to allow for increasingly sophisticated quantum processing and sensing capabilities, the traditional optical-mechanical laboratory infrastructure that make such systems possible are in some cases the limiting factor in further growth of the systems. One promising solution is to integrate as many, if not all, optical components such as waveguides and gratings, single-photon detectors, and high extinction ratio optical switches/modulators either into ion traps themselves or into auxiliary devices that can be easily integrated with ion traps. Here we report on recent efforts at Sandia National Laboratories to include integrated photonics in our surface ion trap platforms.
We report on the characterization of heating rates and photoinduced electric charging on a microfabricated surface ion trap with integrated waveguides. Microfabricated surface ion traps have received considerable attention as a quantum information platform due to their scalability and manufacturability. Here, we characterize the delivery of 435-nm light through waveguides and diffractive couplers to a single ytterbium ion in a compact trap. We measure an axial heating rate at room temperature of 0.78±0.05 q/ms and see no increase due to the presence of the waveguide. Furthermore, the electric field due to charging of the exposed dielectric outcoupler settles under normal operation after an initial shift. The frequency instability after settling is measured to be 0.9 kHz.
Surging interest in engineering quantum computers has stimulated significant and focused research on technologies needed to make them manufacturable and scalable. In the ion trap realm this has led to a transition from bulk three-dimensional macro-scale traps to chip-based ion traps and included important demonstrations of passive and active electronics, waveguides, detectors, and other integrated components. At the same time as these technologies are being developed the system sizes are demanding more ions to run noisy intermediate scale quantum (NISQ) algorithms, growing from around ten ions today to potentially a hundred or more in the near future. To realize the size and features needed for this growth, the geometric and material design space of microfabricated ion traps must expand. In this paper we describe present limitations and the approaches needed to overcome them, including how geometric complexity drives the number of metal levels, why routing congestion affects the size and location of shunting capacitors, and how RF power dissipation can limit the size of the trap array. We also give recommendations for future research needed to accommodate the demands of NISQ scale ion traps that are integrated with additional technologies.