Publications

Abstract not provided.

Donor (S, Se and Te) and acceptor (Mg, Be and C) dopants have been implanted into GaN at doses of 3-5x1014 cm-2 and annealed at temperatures up to 1450 *C. No redistribution of any of the elements is detectable by Secondary Ion Mass Spectrometry, except for Be, which displays an apparent damage-assisted diffusion at 900 "C. At higher temperatures there is no further movement of the Be, suggesting that the point defect flux that assists motion at lower temperatures has been annealed. Effective diffusivities are <2X 1013 cm2.sec-1 at 1450 `C for each of the dopants in GaN.

All of the major acceptor (Mg, C, Be) and donor (Si, S, Se and Te) dopants have been implanted into GaN films grown on A1203 substrates. Annealing was performed at 1100- 1500 C, using AIN encapsulation. Activation percentages of >90Y0 were obtained for Si+ implantation annealed at 1400 C, while higher temperatures led to a decrease in both carrier concentration and electron mobility. No measurable redistribution of any of the implanted dopants was observed at 1450 C.

Si{sup +} implant activation efficiencies above 90%, even at doses of 5 {times} 10{sup 15} cm{sup {minus}2}, have been achieved in GaN by RTP at 1,400--1,500 C for 10 secs. The annealing system utilizes with MoSi{sub 2} heating elements capable of operation up to 1,900 C, producing high heating and cooling rates (up to 100 C{center_dot}s{sup {minus}1}). Unencapsulated GaN show severe surface pitting at 1,300 C, and complete loss of the film by evaporation at 1,400 C. Dissociation of nitrogen from the surface is found to occur with an approximate activation energy of 3.8 eV for GaN (compared to 4.4 eV for AlN and 3.4 eV for InN). Encapsulation with either rf-magnetron reactively sputtered or MOMBE-grown AlN thin films provide protection against GaN surface degradation up to 1,400 C, where peak electron concentrations of {approximately} 5 {times} 10{sup 20} cm{sup {minus}3} can be achieved in Si-implanted GaN. SIMS profiling showed little measurable redistribution of Si, suggesting D{sub Si} {le} 10{sup {minus}13} cm{sup 2}{center_dot}s{sup {minus}1} at 1,400 C . The implant activation efficiency decreases at higher temperatures, which may result from Si{sub Ga} to Si{sub N} site switching and resultant self-compensation.