Publications

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The assurance of the integrity of adhesive bonding at substrate interfaces is paramount to the longevity and sustainability of encapsulated components. Unfortunately, it is often difficult to non-destructively evaluate these materials to determine the adequacy of bonding after manufacturing and then later in service. A particularly difficult problem in this regard is the reliable detection/monitoring of regions of weak bonding that may result from poor adhesion or poor cohesive strength, or degradation in service. One promising and perhaps less explored avenue we have recently begun to investigate for this purpose centers on the use of (chirped) fiber Bragg grating sensing technology. In this scenario, a grating is patterned into a fiber optic such that a (broadband) spectral reflectance is observed. The sensor is highly sensitive to local and uniform changes across the length of the grating. Initial efforts to evaluate this approach for measuring adhesive bonding defects at substrate interfaces are discussed. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

Controlatron neutron generators are used for testing neutron detection systems at Sandia National Laboratories. To provide for increased tube lifetimes for the moderate neutron flux output of these generators, metal hydride (ZrT 2) target fabrication processes have been developed. To provide for manufacturing quality control of these targets, ion beam analysis techniques are used to determine film composition. The load ratios (i.e. T/Zr concentration ratios) of ZrT 2 Controlatron neutron generator targets have been successfully measured by simultaneously acquiring RBS and ERD data using a He ++ beam energy of 10 MeV. Several targets were measured and the film thicknesses obtained from RBS measurements agreed within ±2% with Dektak profilometer measurements. The target fabrication process and ion beam analysis techniques will be presented. © 2009 American Institute of Physics.

Sandia and Rontec have developed an annular, 12-element, 60 mm{sup 2}, Peltier-cooled, translatable, silicon drift detector called the SDD-12. The body of the SDD-12 is only 22.8 mm in total thickness and easily fits between the sample and the upstream wall of the Sandia microbeam chamber. At a working distance of 1 mm, the solid angle is 1.09 sr. The energy resolution is 170 eV at count rates <40 kcps and 200 eV for rates of 1 Mcps. X-ray count rates must be maintained below 50 kcps when protons are allowed to strike the full area of the SDD. Another innovation with this new {mu}PIXE system is that the data are analyzed using Sandia's Automated eXpert Spectral Image Analysis (AXSIA).

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The effects of photocurrents in nuclear weapons induced by proximal nuclear detonations are well known and remain a serious hostile environment threat for the US stockpile. This report describes the final results of an LDRD study of the physical phenomena underlying prompt photocurrents in microelectronic devices and circuits. The goals of this project were to obtain an improved understanding of these phenomena, and to incorporate improved models of photocurrent effects into simulation codes to assist designers in meeting hostile radiation requirements with minimum build and test cycles. We have also developed a new capability on the ion microbeam accelerator in Sandia's Ion Beam Materials Research Laboratory (the Transient Radiation Microscope, or TRM) to supply ionizing radiation in selected micro-regions of a device. The dose rates achieved in this new facility approach those possible with conventional large-scale dose-rate sources at Sandia such as HERMES III and Saturn. It is now possible to test the physics and models in device physics simulators such as Davinci in ways not previously possible. We found that the physical models in Davinci are well suited to calculating prompt photocurrents in microelectronic devices, and that the TRM can reproduce results from conventional large-scale dose-rate sources in devices where the charge-collection depth is less than the range of the ions used in the TRM.

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The characteristics Of ion-induced charge collection and single-event upset are studied in SOI transistors and circuits with various body tie structures. Impact ionization effects including single-event snapback are shown to be very important. Focused ion microbeam experiments are used to find single-event snapback drain voltage thresholds in n-channel SOI transistors as a function of device width. Three-Dimensional device simulations are used to determine single-event upset and snapback thresholds in SOI SRAMS, and to study design tradeoffs for various body-tie structures. A window of vulnerability to single-event snapback is shown to exist below the single-event upset threshold. The presence of single-event snapback in commercial SOI SRAMS is confirmed through broadbeam ion testing, and implications for hardness assurance testing of SOI integrated circuits are discussed.

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To design more radiation tolerant Integrated Circuits (ICs), it is essential to create and test accurate models of ionizing radiation induced charge collection dynamics within microcircuits. A new technique, Diffusion Time Resolved Ion Beam Induced Charge Collection (DTRIBICC), is proposed to measure the average arrival time of the diffused charge at the junction. Specially designed stripe-like junctions were experimentally studied using a 12 MeV carbon microbeam with a spot size of 1 {micro}m. The relative arrival time of ion-generated charge is measured along with the charge collection using a multiple parameter data acquisition system. The results show the importance of the diffused charge collection by junctions, which is especially significant in accounting for Multiple Bit Upset (MBUs) in digital devices.

Under this effort, a new method for studying the single event upset (SEU) in microelectronics has been developed and demonstrated. Called TRIBICC, for Time Resolved Ion Beam Induced Charge Collection, this technique measures the transient charge-collection waveform from a single heavy-ion strike with a {minus}.03db bandwidth of 5 GHz. Bandwidth can be expanded up to 15 GHz (with 5 ps sampling windows) by using an FFT-based off-line waveform renormalization technique developed at Sandia. The theoretical time resolution of the digitized waveform is 24 ps with data re-normalization and 70 ps without re-normalization. To preserve the high bandwidth from IC to the digitizing oscilloscope, individual test structures are assembled in custom high-frequency fixtures. A leading-edge digitized waveform is stored with the corresponding ion beam position at each point in a two-dimensional raster scan. The resulting data cube contains a spatial charge distribution map of up to 4,096 traces of charge (Q) collected as a function of time. These two dimensional traces of Q(t) can cover a period as short as 5 ns with up to 1,024 points per trace. This tool overcomes limitations observed in previous multi-shot techniques due to the displacement damage effects of multiple ion strikes that changed the signal of interest during its measurement. This system is the first demonstration of a single-ion transient measurement capability coupled with spatial mapping of fast transients.

The electronic transport properties of Cadmium Zinc Telluride (CZT) determine the charge collection efficiency (i.e. the signal quality) of CZT detectors. These properties vary on both macroscopic and microscopic scale and depend on the presence of impurities and defects introduced during the crystal growth. Ion Beam Induced Charge Collection (IBICC) is a proven method to measure the charge collection efficiency. Using an ion microbeam, the charge collection efficiency can be mapped with submicron resolution, and the map of electronic properties (such as drift length) can be calculated from the measurement. A more sophisticated version of IBICC, the Time Resolved IBICC (TRIBICC) allows them to determine the mobility and the life time of the charge carriers by recording and analyzing the transient waveform of the detector signal. Furthermore, lateral IBICC and TRIBICC can provide information how the charge collection efficiency depends on the depth where the charge carriers are generated. This allows one to deduce information on the distribution of the electric field and transport properties of the charge carriers along the detector axis. IBICC and TRIBICC were used at the Sandia microbeam facility to image electronic properties of several CZT detectors. From the lateral TRIBICC measurement the electron and hole drift length profiles were calculated.

The literature of radiation damage measurements on cadmium zinc telluride (CZT), cadmium telluride (CT), and mercuric iodide (HgI{sub 2}) is reviewed and in the case of CZT supplemented by new alpha particle data. CZT strip detectors exposed to intermediate energy (1.3 MeV) proton fluences exhibit increased interstrip leakage after 10{sup 10} p/cm{sup 2} and significant bulk leakage after 10{sup 12} p/cm{sup 2}. CZT exposed to 200 MeV protons shows a two-fold loss in energy resolution after a fluence of 5 {times} 10{sup 9} p/cm{sup 2} in thick (3 mm) planar devices but little effect in 2 mm devices. No energy resolution effects were noted from moderated fission spectrum of neutrons after fluences up to 10{sup 10} n/cm{sup 2}, although activation was evident. Exposures of CZT to 5 MeV alpha particle at fluences up to 1.5 {times} 10{sup 10} {alpha}/cm{sup 2} produced a near linear decrease in peak position with fluence and increases in FWHM beginning at about 7.5 {times} 10{sup 9} {alpha}/cm{sup 2}. CT detectors show resolution losses after fluences of 3 {times} 10{sup 9} p/cm{sup 2} at 33 MeV for chlorine-doped detectors. Indium doped material may be more resistant. Neutron exposures (8 MeV) caused resolution losses after fluences of 2 {times} 10{sup 10} n/cm{sup 2}. Mercuric iodide has been studied with intermediate energy protons (10 to 33 MeV) at fluences up to 10{sup 12} p/cm{sup 2} and with 1.5 GeV protons at fluences up to 1.2 {times} 10{sup 8} p/cm{sup 2}. Neutron exposures at 8 MeV have been reported at fluences up to 10{sup 15} n/cm{sup 2}. No radiation damage was reported under these irradiation conditions.

As feature sizes of Integrated Circuits (ICs) continue to shrinlL the sensitivity of these devices, particularly SRAMS and DR4Ms, to natural radiation is increasing. The radiation can lead to the uncontrolled deposition of charge within an IC, which ean alter, for example, the memoty state of a bit and thereby produce what is edled a `SOW error, or Single Event Upset (SEU). The response of ICS to natural background radiation is therefore of great coneem regarding the reliability of Mure devices. In this paper, we present results where Ion Beam Induced Charge Collection (TBICC) technique was used to simulate neutron-induced Si recoil dlkcts in IC test structures. The present wo~ wnducted at the San& National Laboratories, uses a 10 MeV Carbon mierobeam with 1 pm spot to scan test structures on specifically designed ICS. The test structure contains junctions typical of S RAMS and DRAMs. Charge is eolleeted from different areas of the IC under various conditions of junction back bias. The data are digitized and displayed as 3D images combined with KY) coordination. With the aid of IC layout informatio~ the 3D images are sepamted into difTerent layers to allow the identification of charge collection etlciency in the test structures. An analysis of the charge collection efficiency from dillerent test areas is given.

In this paper the authors present a new method for making shallow p-type junctions in silicon by molecular ion implantation. Unlike current molecular ion implantation methods which use boron and fluorine molecules, this new method uses an element which is completely miscible in silicon. Note that fluorine is an element that saturates at a very low concentration in silicon. The compounds used in this new method are boron silicides and boron germanium molecules. These compounds have several distinct advantages including the facts that the co-element silicon (or germanium) has a very high saturation value in the silicon matrix, the co-element is massive and therefore creates more damage during implantation, and the co-element has a larger projected range than the boron. Note that the Rp for fluorine is shallower than that of Boron for a BF{sub 2} implant. Recent experiments indicate that BSi ion beams can be generated in a sputter ion source with efficiencies of 0.5% with respect to the generated Si beam. A plan to develop a new ion source that is compatible with current ion implantation systems is presented.