Publications

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In recent years, efforts have been made within the nuclear weapons complex (National Nuclear Security Administration) of the Department of Energy (DOE) to replace Resource Conservation and Recovery Act (RCRA) regulated solvents (i.e., flammable, toxic, corrosive, and reactive) and ozone-depleting chemicals (ODC) with more benign alternatives. Within the National Nuclear Security Administration (NNSA) and the Department of Defense (DoD) sectors, these solvents are used for cleaning hardware during routine maintenance operations. A primary goal of this study is to replace flammable solvents used in wiping applications. Two cleaners, including a hydrofluoroether (HFE) and an azeotrope of the HFE and isopropyl alcohol (IPA), have been studied as potential replacements for flammable solvents. Cleaning efficacy, short-term and long-term materials compatibility, corrosion, drying times, flammability, environment, safety and health (ES&H) and accelerated aging issues were among the experiments used to screen candidate solvents by the interagency team performing this work. This report presents cleaning efficacy results as determined by the contact angle Goniometer as well as materials compatibility results of various metal alloys and polymers. The results indicate that IPA (baseline cleaner) and the HFE/IPA azeotrope are roughly equivalent in their ability to remove fluorinated grease, silicone grease, and a simulated finger print contaminant from various metal alloys. All of the ASTM sandwich and immersion corrosion tests with IPA, HFE or the HFE/IPA azeotrope on metal alloys showed no signs of corrosion. Furthermore, no deleterious effects were noted for polymeric materials immersed in IPA, HFE, or the HFE/IPA azeotrope.

The annual program report provides detailed information about all aspects of the SNL/CA Hazardous Materials Management Program for a given calendar year. It functions as supporting documentation to the SNL/CA Environmental Management System Program Manual. The 2005 program report describes the activities undertaken during the past year, and activities planned in future years to implement the Hazardous Materials Management Program, one of six programs that supports environmental management at SNL/CA.

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This manual describes the use of theXyceParallel Electronic Simulator.Xycehasbeen designed as a SPICE-compatible, high-performance analog circuit simulator, andhas been written to support the simulation needs of the Sandia National Laboratorieselectrical designers. This development has focused on improving capability over thecurrent state-of-the-art in the following areas:%04Capability to solve extremely large circuit problems by supporting large-scale par-allel computing platforms (up to thousands of processors). Note that this includessupport for most popular parallel and serial computers.%04Improved performance for all numerical kernels (e.g., time integrator, nonlinearand linear solvers) through state-of-the-art algorithms and novel techniques.%04Device models which are specifically tailored to meet Sandia's needs, includingmany radiation-aware devices.3 XyceTMUsers' Guide%04Object-oriented code design and implementation using modern coding practicesthat ensure that theXyceParallel Electronic Simulator will be maintainable andextensible far into the future.Xyceis a parallel code in the most general sense of the phrase - a message passingparallel implementation - which allows it to run efficiently on the widest possible numberof computing platforms. These include serial, shared-memory and distributed-memoryparallel as well as heterogeneous platforms. Careful attention has been paid to thespecific nature of circuit-simulation problems to ensure that optimal parallel efficiencyis achieved as the number of processors grows.The development ofXyceprovides a platform for computational research and de-velopment aimed specifically at the needs of the Laboratory. WithXyce, Sandia hasan %22in-house%22 capability with which both new electrical (e.g., device model develop-ment) and algorithmic (e.g., faster time-integration methods, parallel solver algorithms)research and development can be performed. As a result,Xyceis a unique electricalsimulation capability, designed to meet the unique needs of the laboratory.4 XyceTMUsers' GuideAcknowledgementsThe authors would like to acknowledge the entire Sandia National Laboratories HPEMS(High Performance Electrical Modeling and Simulation) team, including Steve Wix, CarolynBogdan, Regina Schells, Ken Marx, Steve Brandon and Bill Ballard, for their support onthis project. We also appreciate very much the work of Jim Emery, Becky Arnold and MikeWilliamson for the help in reviewing this document.Lastly, a very special thanks to Hue Lai for typesetting this document with LATEX.TrademarksThe information herein is subject to change without notice.Copyrightc 2002-2003 Sandia Corporation. All rights reserved.XyceTMElectronic Simulator andXyceTMtrademarks of Sandia Corporation.Orcad, Orcad Capture, PSpice and Probe are registered trademarks of Cadence DesignSystems, Inc.Silicon Graphics, the Silicon Graphics logo and IRIX are registered trademarks of SiliconGraphics, Inc.Microsoft, Windows and Windows 2000 are registered trademark of Microsoft Corporation.Solaris and UltraSPARC are registered trademarks of Sun Microsystems Corporation.Medici, DaVinci and Taurus are registered trademarks of Synopsys Corporation.HP and Alpha are registered trademarks of Hewlett-Packard company.Amtec and TecPlot are trademarks of Amtec Engineering, Inc.Xyce's expression library is based on that inside Spice 3F5 developed by the EECS De-partment at the University of California.All other trademarks are property of their respective owners.ContactsBug Reportshttp://tvrusso.sandia.gov/bugzillaEmailxyce-support%40sandia.govWorld Wide Webhttp://www.cs.sandia.gov/xyce5 XyceTMUsers' GuideThis page is left intentionally blank6

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Transmission electron microscopy and x-ray diffraction were used to assess the microstructure and strain of Al{sub x}Ga{sub 1?x}N(x = 0.61-0.64) layers grown on AlN. The compressively-strained AlGaN is partially relaxed by inclined threading dislocations, similar to observations on Si-doped AlGaN by P. Cantu, F. Wu, P. Waltereit, S. Keller, A. E. Romanov, U. K. Mishra, S. P. DenBaars, and J. S. Speck [Appl. Phys. Lett. 83, 674 (2003) ]; however, in our material, the dislocations bend before the introduction of any Si. The bending may be initiated by the greater lattice mismatch or the lower dislocation density of our material, but the presence of Si is not necessarily required. The relaxation by inclined dislocations is quantitatively accounted for with the model of A. E. Romanov and J. S. Speck [Appl. Phys. Lett. 83, 2569 (2003)], and we demonstrate the predicted linear dependence of relaxation on layer thickness. Notably, such relaxation was not found in tensile strained AlGaN grown on GaN [J. A. Floro, D. M. Follstaedt, P. Provencio, S. J. Hearne, and S. R. Lee, J. Appl. Phys. 96, 7087 (2004)], even though the same mechanism appears applicable.

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