Competing Quantum Hall Phases in the Second Landau Level in Low Density Limit
Physical Review Letters
Abstract not provided.
Publications
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Jump to search filtersBloch Oscillations in Two-Dimensional Antidot Arrays (invited)
Abstract not provided.
Sandia Quantum Transport Article Was the 12th Most Downloaded Paper from AIP's Applied Physics Letters in February
Abstract not provided.
Magnetoplasmons in Quasi-Neutral Epitaxial Graphene Nanoribbons
Proposed for publication in Physics Review Letters.
Abstract not provided.
THz near-field microscopy of graphene nano-ribbon arrays
Abstract not provided.
Modification of Band Gap and Spin-Orbit Coupling in Type-II GaAs/AlGaInP Heterostructures through Biiaxial Strain Modulation
Abstract not provided.
Magnetic Field Induced Quench of Photoluminescence in La0.7Sr0.3MnO3 Nanopillars Embedded in Self-Assembled Vertically Aligned Epitaxial (ZnO)0.5:(La0.7Sr0.3MnO3)0.5 Nanocomposite Films
Proposed for publication in Applied Physics Letters.
Abstract not provided.
Chaotic Quantum Transport Near the Charge Neutrality Point in Inverted Type-II InAs/GaSb Field-Effect Transistors
Proposed for publication in Physical Review Letters.
Abstract not provided.
Growth and Modification of Graphene: An Overview of Graphene (Opto)Electronics R&D at Sandia
Abstract not provided.
Tunneling Spectroscopy of 5/2 Fractional Quantum Hall Excitations in Etch Defined Quantum Point Contacts
Abstract not provided.
Non-Abelian Fractional Quantum Hall Effect for Fault-Resistant Topological Quantum Computation (invited)
Abstract not provided.
5/2 Fractional Quantum Hall State in Etch Defined Quantum Point Contacts
Abstract not provided.
Edge channel tunneling spectroscopy of 5/2 fractional quantum Hall excitations in etch defined quantum point contacts
Abstract not provided.
Electron-Electron Interaction in High Quality Epitaxial Graphene
New Journal of Physics
Abstract not provided.
A Quantitative Examination of the Collapse of Spin Slitting in the Quantum Hall Regime
Physical Review B
Abstract not provided.
Enabling graphene nanoelectronics
Recent work has shown that graphene, a 2D electronic material amenable to the planar semiconductor fabrication processing, possesses tunable electronic material properties potentially far superior to metals and other standard semiconductors. Despite its phenomenal electronic properties, focused research is still required to develop techniques for depositing and synthesizing graphene over large areas, thereby enabling the reproducible mass-fabrication of graphene-based devices. To address these issues, we combined an array of growth approaches and characterization resources to investigate several innovative and synergistic approaches for the synthesis of high quality graphene films on technologically relevant substrate (SiC and metals). Our work focused on developing the fundamental scientific understanding necessary to generate large-area graphene films that exhibit highly uniform electronic properties and record carrier mobility, as well as developing techniques to transfer graphene onto other substrates.
Growth of GaAsSb/InGaAs quantum well heterostructures and x-ray diffraction studies on the heterostructure interface
Abstract not provided.
Quantum Electronic Phenomena and Structures (invited)
Abstract not provided.
Quantum Electronic Phenomena and Structures (invited)
Abstract not provided.
The Nature of Disorder Matters on the 5/2 Fractional Quantum Hall State
Physical Review Letters
Abstract not provided.
Termination of Two-Dimensional Metallic Conduction Near the Metal-Insulator Transition in a Si/SiGe Quantum Well
Physical Review Letters
Abstract not provided.
Characterization and comparison of devices fabricated from epitaxial graphene on SiC and electrostatically transferred graphene
Abstract not provided.
Enabling Graphene Nanoelectronics
Abstract not provided.
Characterization and Comparison of Devices Fabricated From Epitaxial Graphene on SiC and Electrostatically Transferred Graphene
Abstract not provided.
Electrostatic transfer of epitaxial graphene to glass
We report on a scalable electrostatic process to transfer epitaxial graphene to arbitrary glass substrates, including Pyrex and Zerodur. This transfer process could enable wafer-level integration of graphene with structured and electronically-active substrates such as MEMS and CMOS. We will describe the electrostatic transfer method and will compare the properties of the transferred graphene with nominally-equivalent 'as-grown' epitaxial graphene on SiC. The electronic properties of the graphene will be measured using magnetoresistive, four-probe, and graphene field effect transistor geometries [1]. To begin, high-quality epitaxial graphene (mobility 14,000 cm2/Vs and domains >100 {micro}m2) is grown on SiC in an argon-mediated environment [2,3]. The electrostatic transfer then takes place through the application of a large electric field between the donor graphene sample (anode) and the heated acceptor glass substrate (cathode). Using this electrostatic technique, both patterned few-layer graphene from SiC(000-1) and chip-scale monolayer graphene from SiC(0001) are transferred to Pyrex and Zerodur substrates. Subsequent examination of the transferred graphene by Raman spectroscopy confirms that the graphene can be transferred without inducing defects. Furthermore, the strain inherent in epitaxial graphene on SiC(0001) is found to be partially relaxed after the transfer to the glass substrates.
Results 101–125 of 156