Publications

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The National Nuclear Security Agency (NNSA) initiated the Minority Serving Institution Partnership Plan (MSIPP) to 1) align investments in a university capacity and workforce development with the NNSA mission to develop the needed skills and talent for NNSA's enduring technical workforce at the laboratories and production plants, and 2) to enhance research and education at under-represented colleges and universities. Out of this effort, MSIPP launched a new consortium in early FY17 focused on Tribal Colleges and Universities (TCUs) known as the Advanced Manufacturing Network Initiative (AMNI). This consortium has been extended for FY20 and FY21. The following report summarizes the status update during this quarter.

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High-temperature optical analysis of three different InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) structures (peak wavelength λp = 448, 467, and 515 nm) is conducted for possible integration as an optocoupler emitter in high-density power electronic modules. The commercially available LEDs, primarily used in the display (λp = 467 and 515 nm) and lighting (λp = 448 nm) applications, are studied and compared to evaluate if they can satisfy the light output requirements in the optocouplers at high temperatures. The temperature- and intensity-dependent electroluminescence (T-IDEL) measurement technique is used to study the internal quantum efficiency (IQE) of the LEDs. All three LEDs exhibit above 70% IQE at 500 K and stable operation at 800 K without flickering or failure. At 800 K, a promising IQE of above 40% is observed for blue for display (BD) (λp = 467 nm) and green for display (GD) (λp = 515 nm) samples. The blue for light (BL) (λp = 448 nm) sample shows 24% IQE at 800 K.

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High‐temperature optical analysis of three different InGaN/GaN multiple quantum well (MQW) light‐emitting diode (LED) structures (peak wavelength λ _p  = 448, 467, and 515 nm) is conducted for possible integration as an optocoupler emitter in high‐density power electronic modules. The commercially available LEDs, primarily used in the display ( λ _p  = 467 and 515 nm) and lighting ( λ _p  = 448 nm) applications, are studied and compared to evaluate if they can satisfy the light output requirements in the optocouplers at high temperatures. The temperature‐ and intensity‐dependent electroluminescence (T‐IDEL) measurement technique is used to study the internal quantum efficiency (IQE) of the LEDs. All three LEDs exhibit above 70% IQE at 500 K and stable operation at 800 K without flickering or failure. At 800 K, a promising IQE of above 40% is observed for blue for display (BD) ( λ _p  = 467 nm) and green for display (GD) ( λ _p  = 515 nm) samples. The blue for light (BL) ( λ _p  = 448 nm) sample shows 24% IQE at 800 K.

Commercial light emitting diode (LED) materials - blue (i.e., InGaN/GaN multiple quantum wells (MQWs) for display and lighting), green (i.e., InGaN/GaN MQWs for display), and red (i.e., Al0.05Ga0.45In0.5P/Al0.4Ga0.1In0.5P for display) are evaluated in range of temperature (77–800) K for future applications in high density power electronic modules. The spontaneous emission quantum efficiency (QE) of blue, green, and red LED materials with different wavelengths was calculated using photoluminescence (PL) spectroscopy. The spontaneous emission QE was obtained based on a known model so-called the ABC model. This model has been recently used extensively to calculate the internal quantum efficiency and its droop in the III-nitride LED. At 800 K, the spontaneous emission quantum efficiencies are around 40% for blue for lighting and blue for display LED materials, and it is about 44.5% for green for display LED materials. The spontaneous emission QE is approximately 30% for red for display LED material at 800 K. The advance reported in this paper evidences the possibility of improving high temperature optocouplers with an operating temperature of 500 K and above.

The National Nuclear Security Agency (NNSA) created a Minority Serving Institution Partnership Plan (MSIPP) to 1) align investments in a university capacity and workforce development with the NNSA mission to develop the needed skills and talent for NNSA's enduring technical workforce at the laboratories and production plants, and 2) to enhance research and education at underrepresented colleges and universities. Out of this effort, MSIPP launched a new program in early FY17 focused on Tribal Colleges and Universities (TCUs). The following report summarizes the project focus and status updates during this reporting period.

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