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A comprehensive approach to decipher biological computation to achieve next generation high-performance exascale computing

Howell, Jamie; Lohn, Andrew J.; Marinella, Matthew; Baca, Michael J.; Finnegan, Patrick S.; Wolfley, Steven; Dagel, Daryl; Spahn, Olga B.; Harper, Jason C.; Pohl, Kenneth R.; Mickel, Patrick R.

The human brain (volume=1200cm3) consumes 20W and is capable of performing > 10^16 operations/s. Current supercomputer technology has reached 1015 operations/s, yet it requires 1500m^3 and 3MW, giving the brain a 10^12 advantage in operations/s/W/cm^3. Thus, to reach exascale computation, two achievements are required: 1) improved understanding of computation in biological tissue, and 2) a paradigm shift towards neuromorphic computing where hardware circuits mimic properties of neural tissue. To address 1), we will interrogate corticostriatal networks in mouse brain tissue slices, specifically with regard to their frequency filtering capabilities as a function of input stimulus. To address 2), we will instantiate biological computing characteristics such as multi-bit storage into hardware devices with future computational and memory applications. Resistive memory devices will be modeled, designed, and fabricated in the MESA facility in consultation with our internal and external collaborators.

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TYPE SAND Report YEAR 2013
DOIOSTI

A CMOS Compatible, Forming Free TaOx ReRAM

ECS Transactions (Online)

Stevens, James E.; Mickel, Patrick R.; Hughart, David R.; Marinella, Matthew

Resistive random access memory (ReRAM) has become a promising candidate for next-generation high-performance non-volatile memory that operates by electrically tuning resistance states via modulating vacancy concentrations. Here, we demonstrate a wafer-scale process for resistive switching in tantalum oxide that is completely CMOS compatible. The resulting devices are forming-free and with greater than 1x105 cycle endurance.

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TYPE Journal Article YEAR 2013
OSTIDOI

Optimizing TaOx memristor performance and consistency within the reactive sputtering "forbidden region"

Applied Physics Letters

Lohn, Andrew J.; Stevens, James E.; Mickel, Patrick R.; Marinella, Matthew

Standard deposition processes for depositing ReRAM oxides utilize mass flow of reactive gas to control stoichiometry and have difficulty depositing a precisely defined sub-stoichiometry within a "forbidden region" where film properties are discontinuous with mass flow. We show that by maintaining partial pressure within this discontinuous "forbidden region," instead of by maintaining mass flow, we can optimize tantalum oxide device properties and reduce or eliminate the electroforming step. We also show that defining the partial pressure set point as a fraction of the "forbidden region" instead of as an absolute value can be used to improve wafer-to-wafer consistency with minimal recalibration efforts. © 2013 AIP Publishing LLC.

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TYPE Journal Article YEAR 2013
DOIOSTIScopus
Results 26–50 of 54
Results 26–50 of 54