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Fabrication and characterization of a co-planar detector in diamond for low energy single ion implantation

Applied Physics Letters

Abraham, John B.S.; Pacheco, Jose L.; Aguirre, Brandon A.; Vizkelethy, Gyorgy; Bielejec, Edward S.

We demonstrate low energy single ion detection using a co-planar detector fabricated on a diamond substrate and characterized by ion beam induced charge collection. Histograms are taken with low fluence ion pulses illustrating quantized ion detection down to a single ion with a signal-to-noise ratio of approximately 10. We anticipate that this detection technique can serve as a basis to optimize the yield of single color centers in diamond. In conclusion, the ability to count ions into a diamond substrate is expected to reduce the uncertainty in the yield of color center formation by removing Poisson statistics from the implantation process.

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TYPE Journal Article YEAR 2016
DOIOSTI

Sub-Micron Resolution of Localized Ion Beam Induced Charge Reduction in Silicon Detectors Damaged by Heavy Ions

IEEE Transactions on Nuclear Science

Auden, Elizabeth C.; Pacheco, Jose L.; Bielejec, Edward S.; Vizkelethy, Gyorgy; Abraham, John B.S.; Doyle, B.L.

Displacement damage reduces ion beam induced charge (IBIC) through Shockley-Read-Hall recombination. Closely spaced pulses of 200 keVions focused in a 40 nm beam spot are used to create damage cascades within areas. Damaged areas are detected through contrast in IBIC signals generated with focused ion beams of {200 ions and 60 keV ions. IBIC signal reduction can be resolved over sub-micron regions of a silicon detector damaged by as few as 1000 heavy ions.

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TYPE Journal Article YEAR 2015
DOIOSTIScopus

Silicon Quantum Dots with Counted Antimony Donor Implants

Sandia journal manuscript; Not yet accepted for publication

Singh, Meenakshi; Pacheco, Jose L.; Perry, Daniel L.; Ten Eyck, Gregory A.; Wendt, Joel R.; Pluym, Tammy; Dominguez, Jason; Manginell, Ronald; Luhman, Dwight R.; Bielejec, Edward S.; Lilly, Michael; Carroll, M.S.

Deterministic control over the location and number of donors is crucial to donor spin quantum bits (qubits) in semiconductor based quantum computing. A focused ion beam is used to implant close to quantum dots. Ion detectors are integrated next to the quantum dots to sense the implants. The numbers of ions implanted can be counted to a precision of a single ion. Regular coulomb blockade is observed from the quantum dots. Charge offsets indicative of donor ionization, are observed in devices with counted implants.

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TYPE Journal Article YEAR 2015
OSTI
Results 26–50 of 68
Results 26–50 of 68