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Abstract not provided.

Abstract not provided.

Silicon (Si) has a strength to density ratio of 3.0({sigma}{sub y}/{delta}=(6.8GPa/2.3g/cc)), an order-of-magnitude higher than titanium, aluminum, or stainless steel. Silicon also demonstrates favorable thermal, optical, and electrical properties making it ideal for use as a structural foundation for autonomous, mesoscopic systems such as nanosatellites. Using Si substrates, a structure that can simultaneously act as a thermal management system, a radiation shield, an optical material, a package, and a semiconductor substrate can be realized.

The Center for Compound Semiconductor-Technology (CCST)at Sandia National Laboratories encompasses the full range of required activities--theoretical and experimental solid-state physics, materials science, crystal growth, device design, and fabrication--to develop the next generation of electronic and optoelectronic devices. Semiconductor electronics are vital to the communications and computer industries and to the nation's defense. Compound semiconductors offer very high-speed electronics and integrated optical and electronic capabilities not available with silicon, and will underlie future electronic, optoelectronic, and photonic technologies. The purpose of the CCST is to perform collaborative research generic to electronic and optoelectronic technologies in compound semiconductors. The CCST also includes related research in high-temperature superconducting electronics and hybrid superconductor-semiconductor devices. Facilities in the CCST include extensive molecular-beam epitaxy and metal-organic chemical vapor deposition crystal growth capabilities, a 400-keV ion implanter, and a new 3700 net square foot, class 1000/100 clean room with state-of-the-art processing equipment. Addition of an electron-beam lithography system to permit fabrication of devices with feature sizes below 100 nm is planned for the near future.

This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl{sub 2}Ca{sub 2}Ba{sub 2}Cu{sub 3}O{sub y} thin films.

The Center for Compound Semiconductor Technology (CCST) was formed within the Solid-State Sciences Directorate at Sandia National Laboratories in 1988, as the culmination of a long-term thrust into compound semiconductor research and technology that began about ten years ago. At that time, it was realized that electronic and optoelectronic devices based on compound semiconductors would be necessary for photonic applications, and that they could provide greater radiation hardness, higher speed, and higher operating temperatures than comparable silicon devices and circuits. It was also realized that a successful program would require the development and integration of materials growth and processing capability, solid-state physics research, and device engineering. The program at Sandia grew steadily from the purchase of the first Molecular beam Epitaxy (MBE) system in 1981, and the discovery of strained-layer superlattices in 1982, to the completion of the Compound Semiconductor Research Laboratory in 1989. To more formally organize this effort, Sandia established the CCST in 1988, aided by $10M of funding from DARPA. The CCST comprises most of the compound semiconductor research and development activities in the Solid-State Sciences Directorate. Ongoing programs are funded by the DOE Office of Military Applications, DOE Basic Energy Sciences, DOE Conservation and Renewable Energy, and the Department of Defense. 15 figs.