Publications Details
Low-temperature silicon epitaxy for atomic precision devices
Anderson, Evan M.; Katzenmeyer, Aaron M.; Luk, Ting S.; Campbell, DeAnna M.; Marshall, Michael T.; Bussmann, Ezra B.; Ohlhausen, J.A.; Lu, Ping L.; Kotula, Paul G.; Ward, Daniel R.; Lu, Tzu-Ming L.; Misra, Shashank M.
We discuss chemical, structural, and ellipsometry characterization of low temperature epitaxial Si. While low temperature growth is not ideal, we are still able to prepare crystalline Si to cap functional atomic precision devices.