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FY2021 Q4: Demonstrate moving-grid multi-turbine simulations primarily run on GPUs and propose improvements for successful KPP-2 [Slides]

Adcock, Christiane; Ananthan, Shreyas; Berger-Vergiat, Luc; Brazell, Michael; Brunhart-Lupo, Nicholas; Hu, Jonathan J.; Knaus, Robert C.; Melvin, Jeremy; Moser, Bob; Mullowney, Paul; Rood, Jon; Sharma, Ashesh; Thomas, Stephen; Vijayakumar, Ganesh; Williams, Alan B.; Wilson, Robert; Yamazaki, Ichitaro; Sprague, Michael

Isocontours of Q-criterion with velocity visualized in the wake for two NREL 5-MW turbines operating under uniform-inflow wind speed of 8 m/s. Simulation performed with the hybrid-Nalu-Wind/AMR-Wind solver.

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Demonstrate moving-grid multi-turbine simulations primarily run on GPUs and propose improvements for successful KPP-2

Adcock, Christiane; Ananthan, Shreyas; Berget-Vergiat, Luc; Brazell, Michael; Brunhart-Lupo, Nicholas; Hu, Jonathan J.; Knaus, Robert C.; Melvin, Jeremy; Moser, Bob; Mullowney, Paul; Rood, Jon; Sharma, Ashesh; Thomas, Stephen; Vijayakumar, Ganesh; Williams, Alan B.; Wilson, Robert; Yamazaki, Ichitaro; Sprague, Michael

The goal of the ExaWind project is to enable predictive simulations of wind farms comprised of many megawatt-scale turbines situated in complex terrain. Predictive simulations will require computational fluid dynamics (CFD) simulations for which the mesh resolves the geometry of the turbines, capturing the thin boundary layers, and captures the rotation and large deflections of blades. Whereas such simulations for a single turbine are arguably petascale class, multi-turbine wind farm simulations will require exascale-class resources.

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Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Gao, Xujiao; Mendez Granado, Juan P.; Lu, T.M.; Anderson, Evan; Campbell, Deanna M.; Ivie, Jeffrey A.; Schmucker, Scott W.; Grine, Albert; Lu, Ping; Tracy, Lisa A.; Arghavani, Reza; Misra, Shashank

The atomic precision advanced manufacturing (APAM) enabled vertical tunneling field effect transistor (TFET) presents a new opportunity in microelectronics thanks to the use of ultra-high doping and atomically abrupt doping profiles. We present modeling and assessment of the APAM TFET using TCAD Charon simulation. First, we show, through a combination of simulation and experiment, that we can achieve good control of the gated channel on top of a phosphorus layer made using APAM, an essential part of the APAM TFET. Then, we present simulation results of a preliminary APAM TFET that predict transistor-like current-voltage response despite low device performance caused by using large geometry dimensions. Future device simulations will be needed to optimize geometry and doping to guide device design for achieving superior device performance.

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Sandia / IBM Discussion on Machine Learning for Materials Applications [Slides]

Littlewood, David J.; Wood, M.A.; De Zapiain, David M.; Rajamanickam, Sivasankaran; Trask, Nathaniel A.

This report includes a compilation of several slide presentations: 1) Interatomic Potentials for Materials Science and Beyond–Advances in Machine Learned Spectral Neighborhood Analysis Potentials (Wood); 2) Agile Materials Science and Advanced Manufacturing through AI/ML (de Oca Zapiain); 3) Machine Learning for DFT Calculations (Rajamanickam); 4) Structure-preserving ML discovery of a quantum-to-continuum codesign stack (Trask); and 5) IBM Overview of Accelerated Discovery Technology (Pitera)

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Quantum Transport Simulations for Si:P δ-layer Tunnel Junctions

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Mendez Granado, Juan P.; Gao, Xujiao; Mamaluy, Denis; Misra, Shashank

We present an efficient self-consistent implementation of the Non-Equilibrium Green Function formalism, based on the Contact Block Reduction method for fast numerical efficiency, and the predictor-corrector approach, together with the Anderson mixing scheme, for the self-consistent solution of the Poisson and Schrödinger equations. Then, we apply this quantum transport framework to investigate 2D horizontal Si:P δ-layer Tunnel Junctions. We find that the potential barrier height varies with the tunnel gap width and the applied bias and that the sign of a single charge impurity in the tunnel gap plays an important role in the electrical current.

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$\mathrm{LAMMPS}$ - a flexible simulation tool for particle-based materials modeling at the atomic, meso, and continuum scales

Computer Physics Communications

Thompson, Aidan P.; Aktulga, H.M.; Berger, Richard; Bolintineanu, Dan S.; Brown, W.M.; Crozier, Paul; In 'T Veld, Pieter J.; Kohlmeyer, Axel; Moore, Stan G.; Nguyen, Trung D.; Shan, Ray; Stevens, Mark J.; Tranchida, Julien; Trott, Christian R.; Plimpton, Steven J.

Since the classical molecular dynamics simulator LAMMPS was released as an open source code in 2004, it has become a widely-used tool for particle-based modeling of materials at length scales ranging from atomic to mesoscale to continuum. Reasons for its popularity are that it provides a wide variety of particle interaction models for different materials, that it runs on any platform from a single CPU core to the largest supercomputers with accelerators, and that it gives users control over simulation details, either via the input script or by adding code for new interatomic potentials, constraints, diagnostics, or other features needed for their models. As a result, hundreds of people have contributed new capabilities to LAMMPS and it has grown from fifty thousand lines of code in 2004 to a million lines today. In this paper several of the fundamental algorithms used in LAMMPS are described along with the design strategies which have made it flexible for both users and developers. We also highlight some capabilities recently added to the code which were enabled by this flexibility, including dynamic load balancing, on-the-fly visualization, magnetic spin dynamics models, and quantum-accuracy machine learning interatomic potentials.

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Results 276–300 of 9,998
Results 276–300 of 9,998
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