Publications

Abstract not provided.

The atomic precision advanced manufacturing (APAM) enabled vertical tunneling field effect transistor (TFET) presents a new opportunity in microelectronics thanks to the use of ultra-high doping and atomically abrupt doping profiles. We present modeling and assessment of the APAM TFET using TCAD Charon simulation. First, we show, through a combination of simulation and experiment, that we can achieve good control of the gated channel on top of a phosphorus layer made using APAM, an essential part of the APAM TFET. Then, we present simulation results of a preliminary APAM TFET that predict transistor-like current-voltage response despite low device performance caused by using large geometry dimensions. Future device simulations will be needed to optimize geometry and doping to guide device design for achieving superior device performance.

Abstract not provided.

We propose a vertical TFET using atomic precision advanced manufacturing (APAM) to create an abrupt buried n++-doped source. We developed a gate stack that preserves the APAM source to accumulate holes above it, with a goal of band-to-band tunneling (BTBT) perpendicular to the gate – critical for the proposed device. A metal-insulator-semiconductor (MIS) capacitor shows hole accumulation above the APAM source, corroborated by simulation, demonstrating the TFET’s feasibility.

Abstract not provided.

Abstract not provided.