Spin Measurements of an Electron Bound to a Single Phosphorous Donor in Silicon
Abstract not provided.
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Jump to search filtersCharge Sensed Pauli Blockade in a Metal–Oxide–Semiconductor Lateral Double Quantum Dot
Nano Letters
We report Pauli blockade in a multielectron silicon metal–oxide–semiconductor double quantum dot with an integrated charge sensor. The current is rectified up to a blockade energy of 0.18 ± 0.03 meV. The blockade energy is analogous to singlet–triplet splitting in a two electron double quantum dot. Built-in imbalances of tunnel rates in the MOS DQD obfuscate some edges of the bias triangles. A method to extract the bias triangles is described, and a numeric rate-equation simulation is used to understand the effect of tunneling imbalances and finite temperature on charge stability (honeycomb) diagram, in particular the identification of missing and shifting edges. A bound on relaxation time of the triplet-like state is also obtained from this measurement.
Manipulating single electrons in semiconductor devices for quantum computing
Abstract not provided.
Spontaneous emission spectrum of a diabatically pulsed silicon charge qubit
Nature Physics
Abstract not provided.
Pulsed Electron Transition Measurements in a Silicon Double Quantum Dot
Abstract not provided.
Reweighting of charge occupation incharge stability diagrams due to finite temperature effect and asymmetric tunnel ratesin a silicon MOS double quantum dot
Abstract not provided.
Distinguishing adiabaticity from relaxation in a Si double quantum dot charge qubit
Abstract not provided.
The QCAD Framework for Quantum Device Modeling
Abstract not provided.
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias
Abstract not provided.
Pulsed electron transition measurements in a silicon double quantum dot
Abstract not provided.
Modeling of Relaxation in DQDs and Implications for Adiabaticity
Abstract not provided.
Electrometer sensitivity for spin readout
Abstract not provided.
Asymmetry in Charge Sensing for Silicon MOS Double Quantum Dot with Finite Bias
Abstract not provided.
Sensitivity of charge detection techniques in electrostatically defined MOS quantum dots
Abstract not provided.
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