Publications

We propose a vertical TFET using atomic precision advanced manufacturing (APAM) to create an abrupt buried n++-doped source. We developed a gate stack that preserves the APAM source to accumulate holes above it, with a goal of band-to-band tunneling (BTBT) perpendicular to the gate – critical for the proposed device. A metal-insulator-semiconductor (MIS) capacitor shows hole accumulation above the APAM source, corroborated by simulation, demonstrating the TFET’s feasibility.

Abstract not provided.

We employ a fully charge self-consistent quantum transport formalism, together with a heuristic elastic scattering model, to study the local density of state (LDOS) and the conductive properties of Si:P δ-layer wires at the cryogenic temperature of 4 K. The simulations allow us to explain the origin of shallow conducting sub-bands, recently observed in high resolution angle-resolved photoemission spectroscopy experiments. Our LDOS analysis shows the free electrons are spatially separated in layers with different average kinetic energies, which, along with elastic scattering, must be accounted for to reproduce the sheet resistance values obtained over a wide range of the δ-layer donor densities.

Abstract not provided.

Abstract not provided.