Nanofabrication of tunable nanowire lasers via electron and ion-beam based techniques
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Optics Express
We demonstrate stable, single-frequency output from single, asfabricated GaN nanowire lasers operating far above lasing threshold. Each laser is a linear, double-facet GaN nanowire functioning as gain medium and optical resonator, fabricated by a top-down technique that exploits a tunable dry etch plus anisotropic wet etch for precise control of the nanowire dimensions and high material gain. A single-mode linewidth of ∼0.12 nm and >18dB side-mode suppression ratio are measured. Numerical simulations indicate that single-mode lasing arises from strong mode competition and narrow gain bandwidth. © 2012 Optical Society of America.
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Proposed for publication in optics express.
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Proceedings of SPIE - The International Society for Optical Engineering
Although planar heterostructures dominate current optoelectronic architectures, 1D nanowires and nanorods have distinct and advantageous properties that may enable higher efficiency, longer wavelength, and cheaper devices. We have developed a top-down approach for fabricating ordered arrays of high quality GaN-based nanorods with controllable height, pitch and diameter. This approach avoids many of the limitations of bottom-up synthesis methods. In addition to GaN nanorods, the fabrication and characterization of both axial and radial-type GaN/InGaN nanorod LEDs have been achieved. The precise control over nanorod geometry achiveable by this technique also enables single-mode single nanowire lasing with linewidths of less than 0.1 nm and low lasing thresholds of ∼250kW/cm 2. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).
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Proposed for publication in Institute of Physics (IOP) special issue of Active Metamaterials.
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Proposed for publication in Applied Physics Letters.
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CLEO: Science and Innovations, CLEO_SI 2012
We obtained single-mode lasing in GaN nanowires by using a limited number of cavity modes and a narrow gain spectra. The fabrication was achieved by a top-down technique in high quality GaN films. © OSA 2012.
2011 5th Rio De La Plata Workshop on Laser Dynamics and Nonlinear Photonics, LDNP 2011
We explore the issue of interactions between metamaterial resonators and different types of absorbers placed in proximity to these resonators. Very clear anticrossing behaviour and level splitting is observed when IR phonons interact with planar metamaterials. More complex dipole transitions can be designed using semiconductor bandgap engineering. We show experimentally the coupling between metamaterial resonances and intersubband transitions and discuss this mechanism for electrical tuning of metamaterials throughout the optical infrared spectral region. Finally we will discuss interactions in 3D dielectric resonator metamaterials. © 2011 IEEE.
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Journal of Vacuum Science and Technology. B, Nanotechnology and Microelectronics
Membrane projection lithography is extended from a single layer fabrication technique to a multilayer process, adding polymeric backfill and planarization after each layer is completed. Unaligned contact lithography is used as a rapid prototyping tool to aid in process development, patterning resist membranes in seconds without requiring long e-beam write times. The fabricated multilayer structures show good resistance to solvent attack from subsequent process steps and demonstrate in-plane and out of plane multilayer metallic inclusions in a dielectric host, which is a critical step in the path to develop bulklike metamaterials at optical frequencies.
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Optical Materials Express
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Physical Review Letters
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