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Three-dimensional cut wire pair behavior and controllable bianisotropic response in vertically oriented meta-atoms

Optics Express

Burckel, David B.; Adomanis, Bryan M.; Sinclair, Michael B.; Campione, Salvatore

This paper investigates three-dimensional cut wire pair (CWP) behavior in vertically oriented meta-atoms. We first analyze CWP metamaterial inclusions using full-wave electromagnetic simulations. The scattering behavior of the vertical CWP differs substantially from that of the planar version of the same structure. In particular, we show that the vertical CWP supports a magnetic resonance that is solely excited by the incident magnetic field. This is in stark contrast to the bianisotropic resonant excitation of in-plane CWPs. We further show that this CWP behavior can occur in other vertical metamaterial resonators, such as back-to-back linear dipoles and back-to-back split ring resonators (SRRs), due to the strong coupling between the closely spaced metallic elements in the back-to-back configuration. In the case of SRRs, the vertical CWP mode (unexplored in previous literature) can be excited with a magnetic field that is parallel to both SRR loops, and exists in addition to the familiar fundamental resonances of the individual SRRs. In order to fully describe the scattering behavior from such dense arrays of three-dimensional structures, coupling effects between the close-packed inclusions must be included. Here, the new flexibility afforded by using vertical resonators allows us to controllably create purely electric inclusions, purely magnetic inclusions, as well as bianisotropic inclusions, and vastly increases the degrees of freedom for the design of metafilms.

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Laser Direct Write Synthesis of Lead Halide Perovskites

Journal of Physical Chemistry Letters

Kaehr, Bryan J.; Chou, Stanley S.; Swartzentruber, Brian S.; Biedermann, Laura B.; Carter, Clive B.; Meyer, Kristin M.; Burckel, David B.

Lead halide perovskites are increasingly considered for applications beyond photovoltaics, for example, light emission and detection, where an ability to pattern and prototype microscale geometries can facilitate the incorporation of this class of materials into devices. Here we demonstrate laser direct write of lead halide perovskites, a remarkably simple procedure that takes advantage of the inverse dependence between perovskite solubility and temperature by using a laser to induce localized heating of an absorbing substrate. We demonstrate arbitrary pattern formation of crystalline CH3NH3PbBr3 on a range of substrates and fabricate and characterize a microscale photodetector using this approach. This direct write methodology provides a path forward for the prototyping and production of perovskite-based devices.

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Oblique patterned etching of vertical silicon sidewalls

Applied Physics Letters

Burckel, David B.; Finnegan, Patrick S.; Henry, Michael D.; Resnick, Paul J.; Jarecki, Robert L.

A method for patterning on vertical silicon surfaces in high aspect ratio silicon topography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches.

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Micron-scale three-dimensional subtractive manufacturing

ADVANCED MATERIALS

Burckel, David B.; Finnegan, Patrick S.; Resnick, Paul J.; Henry, Michael D.; Jarecki, Robert L.

Emerging nano-photonic and nano-opto-mechanical applications benefit from fabrication of complex three-dimensional structures. Creation of micrometer scale and sub-micrometer scale structures can be performed either additively, or subtractively. Additive techniques, where material is deposited, such as direct laser write, interferometric lithography, nano-origami and colloidal self-assembly have been used to create a wide array of complex sub-micrometer structures. Example of subtractive fabrication of three-dimensional structures, where material is removed, are less common.

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3D-ICs created using oblique processing

Proceedings of SPIE - The International Society for Optical Engineering

Burckel, David B.

This paper demonstrates that another class of three-dimensional integrated circuits (3D-ICs) exists, distinct from through silicon via centric and monolithic 3D-ICs. Furthermore, it is possible to create devices that are 3D at the device level (i.e. with active channels oriented in each of the three coordinate axes), by performing standard CMOS fabrication operations at an angle with respect to the wafer surface into high aspect ratio silicon substrates using membrane projection lithography (MPL). MPL requires only minimal fixturing changes to standard CMOS equipment, and no change to current state-of-the-art lithography. Eliminating the constraint of 2D planar device architecture enables a wide range of new interconnect topologies which could help reduce interconnect resistance/capacitance, and potentially improve performance.

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Results 26–50 of 90
Results 26–50 of 90