Publications

Abstract not provided.

Abstract not provided.

Manufacturing of integrated circuits (ICs) using a split foundry process expands design space in IC fabrication by employing unique capabilities of multiple foundries and provides added security for IC designers [1] Defect localization and root cause analysis is critical to failure identification and implementation of corrective actions. In addition to split-foundry fabrication, the device addressed in this publication is .comprised of 8 metal layers, aluminum test pads, and tungsten thru-silicon vias (TSVs) making the circuit area > 68% metal. This manuscript addresses the failure analysis efforts involved in root cause analysis, failure analysis findings, and the corrective actions implemented to eliminate these failure mechanisms from occurring in future product.

Two-dimensional materials were explored through collaboration with Steve Howell and Catalyn Spataru, led by James Bartz during FY15 and FY16 at Sandia National Laboratories. Because of their two-dimensional nature, these materials may offer properties exceeding those of bulk materials. This work involved Density Functional Theory simulations and optical methods, instrumentation development, materials growth and materials characterization. Through simulation the wide variety of two dimensional materials was down-selected for fabrication and testing. Out of the two dimensional semiconductors studied, black phosphorus bilayers showed the strongest spectral absorption tuning with applied electric field. Laser scanning confocal microscopy, spectroscopy and atomic force microscopy allowed for identification of micron scale samples. A technique involving conductive tip atomic force microscopy and back-side illumination was developed simple assembly and characterization of material spectral response.

The Contractor shall provide the capability of fabricating Cu interposer wafers to Sandia National Laboratories (Sandia) or (SNL), located in Albuquerque, New Mexico.