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Development of high-voltage vertical GaN PN diodes

Kaplar, Robert K.; Gunning, Brendan P.; Allerman, A.A.; Crawford, Mary H.; Flicker, Jack D.; Armstrong, Andrew A.; Yates, Luke Y.; Binder, Andrew B.; Dickerson, Jeramy R.; Pickrell, Gregory P.; Sharps, Paul; Anderson, T.; Gallagher, J.; Jacobs, A.; Koehler, A.; Tadjer, M.; Hobart, K.; Ebrish, M.; Porter, M.; Martinez, R.; Zeng, K.; Ji, D.; Chowdhury, S.; Aktas, O.; Cooper, J.

This paper describes the development of vertical GaN PN diodes for high-voltage applications. A centerpiece of this work is the creation of a foundry effort that incorporates epitaxial growth, wafer metrology, device design, processing, and characterization, and reliability evaluation and failure analysis. A parallel effort aims to develop very high voltage (up to 20 kV) GaN PN diodes for use as devices to protect the electric grid against electromagnetic pulses.