Areas of Expertise
Ion Beam Analysis (IBA)
Accelerating a charged particle into an unknown material to determine its identity, local chemistry, and structure.
Ion Beam Modification (IBM)
Tailoring the local chemistry, microstructure, or both of a material with accelerated ions to enhance a chosen property and the performance of the system.
Radiation Effects Microscopy (REM)
Using high energy ion microscopes to determine the radiation hardness and softness of microelectronics; identifying potential weaknesses.
In situ Ion Irradiation Microscopy (I3M)
Real time observation of microstructural and property evolution during ion bombardment. in various extreme radiation environments.
In situ Ion Irradiation Microscopy (I3M) GIF 1 
In situ Ion Irradiation Microscopy (I3M) GIF 1
Video Gallery
Publications
Ion Beam Facility
Opened in 2010, Sandia’s Ion Beam Lab is a state-of-the-art facility using ion and electron accelerators to study and modify materials systems.
The IBL is a Sandia User Facility, and is interested in pursuing a range of cutting edge studies, including controlled defects in materials, materials in radiation environments, and hostile environment performance. The building houses a Tandem and a Pelletron accelerator, an Implanter, a Nano-Implanter, an in-situ TEM and the Colutron. The Nano-Implanter is unique to the world, and the in-situ TEM is one of two in the U.S., putting the IBL on the forefront of developing technologies in radiation studies.