Publications

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The brain is capable of massively parallel information processing while consuming only ~1-100 fJ per synaptic event1,2. Inspired by the efficiency of the brain, CMOS-based neural architectures3 and memristors4,5 are being developed for pattern recognition and machine learning. However, the volatility, design complexity and high supply voltages for CMOS architectures, and the stochastic and energy-costly switching of memristors complicate the path to achieve the interconnectivity, information density, and energy efficiency of the brain using either approach. Here we describe an electrochemical neuromorphic organic device (ENODe) operating with a fundamentally different mechanism from existing memristors. ENODeswitches at lowvoltage and energy (<10 pJ for 103 μm2 devices), displays >500 distinct, non-volatile conductance states within a~1V range, and achieves high classification accuracy when implemented in neural network simulations. Plastic ENODes are also fabricated on flexible substrates enabling the integration of neuromorphic functionality in stretchable electronic systems6,7. Mechanical flexibility makes ENODes compatible with three-dimensional architectures, opening a path towards extreme interconnectivity comparable to the human brain.

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We address practical limits of energy efficiency scaling for logic and memory. Scaling of logic will end with unreliable operation, making computers probabilistic as a side effect. The errors can be corrected or tolerated, but overhead will increase with further scaling. We address the tradeoff between scaling and error correction that yields minimum energy per operation, finding new error correction methods with energy consumption limits about 2× below current approaches. The maximum energy efficiency for memory depends on several other factors. Adiabatic and reversible methods applied to logic have promise, but overheads have precluded practical use. However, the regular array structure of memory arrays tends to reduce overhead and makes adiabatic memory a viable option. This paper reports an adiabatic memory that has been tested at about 85× improvement over standard designs for energy efficiency. Combining these approaches could set energy efficiency expectations for processor-in-memory computing systems.

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Resistive memories enable dramatic energy reductions for neural algorithms. We propose a general purpose neural architecture that can accelerate many different algorithms and determine the device properties that will be needed to run backpropagation on the neural architecture. To maintain high accuracy, the read noise standard deviation should be less than 5% of the weight range. The write noise standard deviation should be less than 0.4% of the weight range and up to 300% of a characteristic update (for the datasets tested). Asymmetric nonlinearities in the change in conductance vs pulse cause weight decay and significantly reduce the accuracy, while moderate symmetric nonlinearities do not have an effect. In order to allow for parallel reads and writes the write current should be less than 100 nA as well.

Resistive memories enable dramatic energy reductions for neural algorithms. We propose a general purpose neural architecture that can accelerate many different algorithms and determine the device properties that will be needed to run backpropagation on the neural architecture. To maintain high accuracy, the read noise standard deviation should be less than 5% of the weight range. The write noise standard deviation should be less than 0.4% of the weight range and up to 300% of a characteristic update (for the datasets tested). Asymmetric nonlinearities in the change in conductance vs pulse cause weight decay and significantly reduce the accuracy, while moderate symmetric nonlinearities do not have an effect. In order to allow for parallel reads and writes the write current should be less than 100 nA as well.

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Wide band gap semiconductors like AlN typically cannot be efficiently p-doped: acceptor levels are far from the valence band-edge, preventing holes from activating. This means that pn-junctions cannot be created, and the semiconductor is less useful, a particular problem for deep Ultraviolet (UV) optoelectronics.

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The exponential increase in data over the last decade presents a significant challenge to analytics efforts that seek to process and interpret such data for various applications. Neural-inspired computing approaches are being developed in order to leverage the computational properties of the analog, low-power data processing observed in biological systems. Analog resistive memory crossbars can perform a parallel read or a vector-matrix multiplication as well as a parallel write or a rank-1 update with high computational efficiency. For an N × N crossbar, these two kernels can be O(N) more energy efficient than a conventional digital memory-based architecture. If the read operation is noise limited, the energy to read a column can be independent of the crossbar size (O(1)). These two kernels form the basis of many neuromorphic algorithms such as image, text, and speech recognition. For instance, these kernels can be applied to a neural sparse coding algorithm to give an O(N) reduction in energy for the entire algorithm when run with finite precision. Sparse coding is a rich problem with a host of applications including computer vision, object tracking, and more generally unsupervised learning.

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As transistors start to approach fundamental limits and Moore's law slows down, new devices and architectures are needed to enable continued performance gains. New approaches based on RRAM (resistive random access memory) or memristor crossbars can enable the processing of large amounts of data[1, 2]. One of the most promising applications for RRAM crossbars is brain inspired or neuromorphic computing[3, 4].

As transistors start to approach fundamental limits and Moore's law slows down, new devices and architectures are needed to enable continued performance gains. New approaches based on RRAM (resistive random access memory) or memristor crossbars can enable the processing of large amounts of data[1, 2]. One of the most promising applications for RRAM crossbars is brain inspired or neuromorphic computing[3, 4].