The goal of this LDRD was to engineer further improvements in a novel electron tunneling device, the double electron layer tunneling transistor (DELTT). The DELTT is a three terminal quantum device, which does not require lateral depletion or lateral confinement, but rather is entirely planar in configuration. The DELTT's operation is based on 2D-2D tunneling between two parallel 2D electron layers in a semiconductor double quantum well heterostructure. The only critical dimensions reside in the growth direction, thus taking full advantage of the single atomic layer resolution of existing semiconductor growth techniques such as molecular beam epitaxy. Despite these advances, the original DELTT design suffered from a number of performance short comings that would need to be overcome for practical applications. These included (i)a peak voltage too low ({approx}20 mV) to interface with conventional electronics and to be robust against environmental noise, (ii) a low peak current density, (iii) a relatively weak dependence of the peak voltage on applied gate voltage, and (iv) an operating temperature that, while fairly high, remained below room temperature. In this LDRD we designed and demonstrated an advanced resonant tunneling transistor that incorporates structural elements both of the DELTT and of conventional double barrier resonant tunneling diodes (RTDs). Specifically, the device is similar to the DELTT in that it is based on 2D-2D tunneling and is controlled by a surface gate, yet is also similar to the RTD in that it has a double barrier structure and a third collector region. Indeed, the device may be thought of either as an RTD with a gate-controlled, fully 2D emitter, or alternatively, as a ''3-layer DELTT,'' the name we have chosen for the device. This new resonant tunneling transistor retains the original DELTT advantages of a planar geometry and sharp 2D-2D tunneling characteristics, yet also overcomes the performance shortcomings of the original DELTT design. In particular, it exhibits the high peak voltages and current densities associated with conventional RTDs, allows sensitive control of the peak voltage by the control gate, and operates nearly at room temperature. Finally, we note under this LDRD we also investigated the use of three layer DELTT structures as long wavelength (Terahertz) detectors using photon-assisted tunneling. We have recently observed a narrowband (resonant) tunable photoresponse in related structures consisting of grating-gated double quantum wells, and report on that work here as well.
Photonic crystals are periodically engineered ''materials'' which are the photonic analogues of electronic crystals. Much like electronic crystal, photonic crystal materials can have a variety of crystal symmetries, such as simple-cubic, closed-packed, Wurtzite and diamond-like crystals. These structures were first proposed in late 1980's. However, due mainly to fabrication difficulties, working photonic crystals in the near-infrared and visible wavelengths are only just emerging. In this article, we review the construction of two- and three-dimensional photonic crystals of different symmetries at infrared and optical wavelengths using advanced semiconductor processing. We further demonstrate that this process lends itself to the creation of line defects (linear waveguides) and point defects (micro-cavities), which are the most basic building blocks for optical signal processing, filtering and routing.
We study the ballistic and diffusive magnetoquantum transport using a typical quantum point contact geometry for single and tunnel-coupled double wires that are wide (less than or similar to1 mum) in one perpendicular direction with densely populated sublevels and extremely confined in the other perpendicular (i.e., growth) direction. A general analytic solution to the Boltzmann equation is presented for multisublevel elastic scattering at low temperatures. The solution is employed to study interesting magnetic-field dependent behavior of the conductance such as a large enhancement and quantum oscillations of the conductance for various structures and field orientations. These phenomena originate from the following field-induced properties: magnetic confinement, displacement of the initial- and final-state wave functions for scattering, variation of the Fermi velocities, mass enhancement, depopulation of the sublevels and anticrossing (in double quantum wires). The magnetoconductance is strikingly different in long diffusive (or rough. dirty) wires from the quantized conductance in short ballistic (or clean) wires. Numerical results obtained for the rectangular confinement potentials in the growth direction are satisfactorily interpreted in terms of the analytic solutions based on harmonic confinement potentials. Some of the predicted features of the field-dependent diffusive and quantized conductances are consistent with recent data from GaAs/AlxGa1-xAs double quantum wires.
The authors report on their recent experimental studies of vertically-coupled quantum point contacts subject to in-plane magnetic fields. Using a novel flip-chip technique, mutually aligned split gates on both sides of a sub micron thick double quantum well heterostructure define a closely-coupled pair of ballistic one-dimensional (1D) constrictions. They observe quantized conductance steps due to each quantum well and demonstrate independent control of each ID constriction width. In addition, a novel magnetoconductance feature at {approximately}6 T is observed when a magnetic field is applied perpendicular to both the current and growth directions. This conductance dip is observed only when 1D subbands are populated in both the top and bottom constrictions. This data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.
The authors study multi-photon-assisted transmission of electrons through single-step, single-barrier and double-barrier potential-energy structures as a function of the photon energy and the temperature. Sharp resonances in the spectra of the tunneling current through double-barrier structures are relevant to infra-red detectors.
The authors show that the real space representation of the interface-roughness as a fluctuating potential in the coordinate space is equivalent to the usual energy-fluctuation representation for intrasublevel scattering in a single quantum well with a generally shaped confinement-potential profile. The coordinate picture is, however, more general and can be used for higher-order effects and multi-sublevel scattering in coupled multi-quantum-well structures.
We study the low-temperature in-plane magnetoconductance of vertically coupled double quantum wires. Using a novel flip-chip technique, the wires are defined by two pairs of mutually aligned split gates on opposite sides of a≤1 micron thick AlGaAs/GaAs double quantum well heterostructure. We observe quantized conductance steps due to each quantum well and demonstrate independent control of each 1D wire. A broad dip in the magnetoconductance at approximately 6 T is observed when a magnetic field is applied perpendicular to both the current and growth directions. This conductance dip is observed only when 1D subbands are populated in both the top and bottom constrictions. This data is consistent with a counting model whereby the number of subbands crossing the Fermi level changes with field due to the formation of an anticrossing in each pair of 1D subbands.
We present a microscopic theory of the excitonic Stokes and anti-Stokes energy transfer mechanisms between two widely separated unequal quantum wells with a large energy mismatch ({Delta}) at low temperatures (T). Exciton transfer through dipolar coupling, photon-exchange coupling and over-barrier ionization of the excitons through exciton-exciton Auger processes are examined. The energy transfer rate is calculated as a function of T and the center-to-center distance d between the two wells. The rates depend sensitively on T for plane-wave excitons. For located excitons, the rates depend on T only through the T-dependence of the localization radius.
The effect of higher-order corrections to the Born approximation is studied for the previously obtained giant conductance enhancement in tunnel-coupled double quantum wires in a parallel magnetic field. The relative correction is found to be significant and depends on various effects such as the magnetic field, electron and impurity densities, impurity positions, symmetric and asymmetric doping profiles, and center barrier thickness.
This LDRD project explored the fundamental physics of a new class of photonic materials, photonic bandgap structures (PBG), and examine its unique properties for the design and implementation of photonic devices on a nano-meter length scale for the control and confinement of light. The low loss, highly reflective and quantum interference nature of a PBG material makes it one of the most promising candidates for realizing an extremely high-Q resonant cavity, >10,000, for optoelectronic applications and for the exploration of novel photonic physics, such as photonic localization, tunneling and modification of spontaneous emission rate. Moreover, the photonic bandgap concept affords us with a new opportunity to design and tailor photonic properties in very much the same way we manipulate, or bandgap engineer, electronic properties through modern epitaxy.
Magnetic semiconductors offer a unique possibility for strongly tuning the intrinsic alloy disorder potential with applied magnetic field. We report the direct observation of a series of step-like reductions in the magnetic alloy disorder potential in single ZnSe/Zn(Cd,Mn)Se quantum wells between O and 60 Tesla. This disorder, measured through the linewidth of low temperature photoluminescence spectra drops abruptly at -19, 36, and 53 Tesla, in concert with observed magnetization steps. Conventional models of alloy disorder (developed for nonmagnetic semiconductors) reproduce the general shape of the data, but markedly underestimate the size of the linewidth reduction.
We show that the low-temperature conductance (G) of a quantum point contact consisting of ballistic tunnel-coupled double-layer quantum well wires is modulated by an in-layer magnetic field B{sub {parallel}} perpendicular to the wires due to the anticrossing. In a system with a small g factor, B{sub {parallel}} creates a V-shaped quantum staircase for G, causing it to decrease in steps of 2e{sup 2}/{Dirac_h} to a minimum and then increase to a maximum value, where G may saturate or decrease again at higher B{sub {parallel}}'s. The effect of B{sub {parallel}}-induced mass enhancement and spin splitting is studied. The relevance of the results to recent data is discussed.