Wide-Bandgap Power Switch Reliability for Energy Grid Applications
Abstract not provided.
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Jump to search filtersInfluence of Barrier Design on Current Collapse in High Voltage AlGaN/GaN HEMTs
Abstract not provided.
Slow Detrapping Transients due to Gate and Drain Bias Stress in High Breakdown Voltage AlGaN/GaN HEMTs
IEEE Transactions on Electron Devices
Abstract not provided.
Characterization and Reliability of SiC- and GaN-Based Power Transistors for Renewable Energy Applications
Abstract not provided.
Impact of the Al Mole Fraction in the Bulk- and Surface-State Induced Instability of AlGaN/GaN HEMTs
Abstract not provided.
Copy of Capacitor Reliability in Photovoltaic Inverters
IEEE Photovotlaics
Abstract not provided.
IGBT Reliability Testing Protocol for PV Inverter Applications
Progress in Photovoltaics
Abstract not provided.
Photovoltaic Inverter Reliability Assessment
IEEE Journal of Photovoltaics
Abstract not provided.
Impact of the Al Mole Fraction in the Bulk- and Surface-State Induced Instability of AlGaN/GaN HEMTs
Abstract not provided.
ANALYSIS AND PREDICTION OF STABILITY IN COMMERCIAL 1200V 33A 4H-SiC MOSFETS
Abstract not provided.
Sub-bandgap light-induced carrier generation at room temperature in silicon carbide MOS capacitors
Materials Science Forum
Carrier generation characteristics in n-type substrate SiC MOS capacitors induced by sub-bandgap energy light are reported. The generation rate is high enough to create an inversion layer in ∼20 minutes with monochromatic light (front side illumination) of energy 2.1 eV (intensity ∼5×10 16 cm-2s-1) in 4H-SiC for electric fields smaller than 1 MV/cm. Generation and recovery results strongly indicate involvement of a metastable defect whose efficiency as a generation center increases under hole-rich and decreases under electron-rich conditions. The generation dependence on bias history and light energy shows the defect to have properties consistent with the metastable silicon vacancy / carbon vacancy-antisite complex (VSi/Vc-CSi). © (2012) Trans Tech Publications.
Analysis and Prediction of Stability in Commercial 1200 V 33A 4H-SiC MOSFETs
Abstract not provided.
Impact of the Al mole fraction in the Bulk and Surface State Induced Instability of AlGaN/GaN HEMTs
Abstract not provided.
Degradation Mechanisms and Characterization Techniques in SiC MOSFETs at High Temperature Operation
Abstract not provided.
Analysis and Prediction of Stability in Commercial 1200 V 33A 4H-SiC MOSFETs
Abstract not provided.
Degradation Mechanisms and Characterization Techniques in SiC MOSFETs at High Temperature Operation
Abstract not provided.
High Power Semiconductor Devices for FACTS: Current State of the Art and Opportunities for Advanced Materials
Abstract not provided.
Sub-Bandgap Light-Induced Carrier Generation at Room Temperature in Silicon Carbide MOS Capacitors
Abstract not provided.
Sub-bandgap light-induced carrier generation at room temperature in 4H-SiC Metal Oxide Semiconductor capacitors
Applied Physics Letters
Abstract not provided.
Reliability Evaluation and Prediction of Commercial 4H-SiC Power MOSFETs
Abstract not provided.
Sub-bandgap light-induced carrier generation at room temperature in Silicon Carbide MOS capacitors
Abstract not provided.
PV INVERTER PERFORMANCE AND RELIABILITY: WHAT IS THE ROLE OF THE IGBT?
Abstract not provided.
PV Inverter Performance and Reliability: What is the Role of the IGBT?
Abstract not provided.
Extraction of Trapped Charge in 4H-SiC MOSFETs from Subthreshold Characteristics
Applied Physics Letters
Abstract not provided.
Stress Testing of Semiconductor Switches for PV Inverter Applications at Sandia National Laboratories
Abstract not provided.
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