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Slow detrapping transients due to gate and drain bias stress in high breakdown voltage AlGaN/GaN HEMTs

IEEE Transactions on Electron Devices

Dasgupta, Sandeepan; Sun, Min; Armstrong, Andrew A.; Kaplar, Robert J.; Marinella, Matthew; Stanley, James B.; Atcitty, Stanley; Palacios, Tomas

Charge trapping and slow (from 10 s to > 1000 s) detrapping in AlGaN/GaN high electron mobility transistors (HEMTs) designed for high breakdown voltages (> 1500 V) is studied through a combination of electrical, thermal, and optical methods to identify the impact of Al molefraction and passivation on trapping. Trapping due to 5-10 V drain bias stress in the on-state (V gs = 0) is found to have significantly slower recovery, compared with trapping in the off-state (V gs < V th, V ds = 0). Two different trapping components, i.e., TG1 (E a = 0.6 eV) and TG2 (with negligible temperature dependence), in AlGaN dominate under gate bias stress in the off-state. Al 0.15 Ga 0.85N shows much more vulnerability to trapping under gate stress in the absence of passivation than does AlGaN with a higher Al mole fraction. Under large drain bias, trapping is dominated by a much deeper trap TD. Detrapping under monochromatic light shows TD to have E a ≈ 1.65 eV. Carbon doping in the buffer is shown to introduce threshold voltage shifts, unlike any of the other traps. © 2012 IEEE.

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TYPE Journal Article YEAR 2012
ScopusOSTIDOI

PV inverter performance and reliability: What is the role of the bus capacitor?

IEEE Journal of Photovoltaics

Kaplar, Robert J.; Marinella, Matthew; Granata, Jennifer E.

In order to elucidate how the degradation of individual components affects the state of the photovoltaic inverter as a whole, we have carried out SPICE simulations to investigate the voltage and current ripple on the DC bus. The bus capacitor is generally considered to be among the least reliable components of the system, so we have simulated how the degradation of bus capacitors affects the AC ripple at the terminals of the PV module. Degradation-induced ripple leads to an increased degradation rate in a positive feedback cycle. Additionally, laboratory experiments are being carried out to ascertain the reliability of metallized thin film capacitors. By understanding the degradation mechanisms and their effects on the inverter as a system, steps can be made to more effectively replace marginal components with more reliable ones, increasing the lifetime and efficiency of the inverter and decreasing its cost per watt towards the US Department of Energy goals.

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TYPE Journal Article YEAR 2012
OSTIDOI

Sub-bandgap light-induced carrier generation at room temperature in silicon carbide MOS capacitors

Materials Science Forum

Dasgupta, Sandeepan; Armstrong, Andrew A.; Kaplar, Robert J.; Marinella, Matthew; Smith, Mark A.; Atcitty, Stanley

Carrier generation characteristics in n-type substrate SiC MOS capacitors induced by sub-bandgap energy light are reported. The generation rate is high enough to create an inversion layer in ∼20 minutes with monochromatic light (front side illumination) of energy 2.1 eV (intensity ∼5×10 16 cm-2s-1) in 4H-SiC for electric fields smaller than 1 MV/cm. Generation and recovery results strongly indicate involvement of a metastable defect whose efficiency as a generation center increases under hole-rich and decreases under electron-rich conditions. The generation dependence on bias history and light energy shows the defect to have properties consistent with the metastable silicon vacancy / carbon vacancy-antisite complex (VSi/Vc-CSi). © (2012) Trans Tech Publications.

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TYPE Journal Article YEAR 2012
DOIOSTIScopus
Results 301–325 of 346
Results 301–325 of 346
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