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Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks

IEEE International Reliability Physics Symposium Proceedings

King, Michael P.; Dickerson, Jeramy; Dasgupta, S.; Marinella, Matthew; Kaplar, Robert J.; Piedra, D.; Sun, M.; Palacios, T.

Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO2 gate dielectric. Results show temperature-invariant emission processes are present in both devices. Recessed-gate devices with SiO2 dielectrics are observed to exhibit simultaneous trapping and emission processes during post-stress recovery.

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TYPE Conference Poster YEAR 2015
OSTIScopus

Trap-related parametric shifts under DC bias and switched operation life stress in power AlGaN/GaN HEMTs

IEEE International Reliability Physics Symposium Proceedings

Khalil, S.G.; Ray, L.; Chen, M.; Chu, R.; Zehnder, D.; Garrido, A.; Munsi, M.; Kim, S.; Hughes, B.; Boutros, K.; Kaplar, Robert J.; Dickerson, Jeramy; Dasgupta, S.; Atcitty, Stanley; Marinella, M.J.

This paper reports on trap-related shifts of the transfer curve and threshold voltage of power AlGaN/GaN HEMTs under switched bias operating life and reverse and forward DC bias stress. Opposite polarity threshold voltage shifts at room temperature under operating life and reverse bias stress conditions can be explained by means of drain current transient measurements under reverse bias stress conditions. A proposed model to explain the trapping/de-trapping behavior under different stress conditions is described and highlights the critical role of the electric field. Experimental evidence of the importance of the role of the electric field is seen in reduced parametric shift by improving the field plate design. © 2014 IEEE.

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TYPE Conference YEAR 2014
ScopusOSTI

Sensitivity analysis of a technique for the extraction of interface trap density in SiC MOSFETs from subthreshold characteristics

IEEE International Reliability Physics Symposium Proceedings

Hughart, David R.; Flicker, Jack D.; Atcitty, Stanley; Marinella, Matthew; Kaplar, Robert J.

A method for extracting interface trap density (DIT) from subthreshold I-V characteristics is used to analyze data on a SiC MOSFET stressed for thirty minutes at 175°C with a gate bias of-20 V. Without knowing the channel doping, the change in DIT can be calculated when referenced to an energy level correlated with the threshold voltage. © 2014 IEEE.

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TYPE Conference YEAR 2014
DOIOSTIScopus

Sensitivity analysis of a technique for the extraction of interface trap density in SiC MOSFETs from subthreshold characteristics

IEEE International Reliability Physics Symposium Proceedings

Hughart, David R.; Flicker, Jack D.; Atcitty, Stanley; Marinella, Matthew; Kaplar, Robert J.

A method for extracting interface trap density (DIT) from subthreshold I-V characteristics is used to analyze data on a SiC MOSFET stressed for thirty minutes at 175°C with a gate bias of-20 V. Without knowing the channel doping, the change in DIT can be calculated when referenced to an energy level correlated with the threshold voltage. © 2014 IEEE.

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TYPE Conference YEAR 2014
DOIOSTIScopus

Sensitivity analysis of a technique for the extraction of interface trap density in SiC MOSFETs from subthreshold characteristics

IEEE International Reliability Physics Symposium Proceedings

Hughart, David R.; Flicker, Jack D.; Atcitty, Stanley; Marinella, Matthew; Kaplar, Robert J.

A method for extracting interface trap density (DIT) from subthreshold I-V characteristics is used to analyze data on a SiC MOSFET stressed for thirty minutes at 175°C with a gate bias of-20 V. Without knowing the channel doping, the change in DIT can be calculated when referenced to an energy level correlated with the threshold voltage. © 2014 IEEE.

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TYPE Conference YEAR 2014
DOIOSTIScopus
Results 251–275 of 346
Results 251–275 of 346
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