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Path towards a vertical TFET enabled by atomic precision advanced manufacturing

Lu, Tzu M.; Gao, Xujiao; Anderson, Evan M.; Mendez Granado, Juan P.; Campbell, Deanna M.; Ivie, Jeffrey A.; Schmucker, Scott W.; Grine, Albert; Lu, Ping; Tracy, Lisa A.; Arghavani, Reza; Misra, Shashank

We propose a vertical TFET using atomic precision advanced manufacturing (APAM) to create an abrupt buried n++-doped source. We developed a gate stack that preserves the APAM source to accumulate holes above it, with a goal of band-to-band tunneling (BTBT) perpendicular to the gate – critical for the proposed device. A metal-insulator-semiconductor (MIS) capacitor shows hole accumulation above the APAM source, corroborated by simulation, demonstrating the TFET’s feasibility.