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Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid

Kazanowska, Barbara A.; Sapkota, Keshab R.; Lu, Ping L.; Talin, A.A.; Bussmann, Ezra B.; Ohta, Taisuke O.; Gunning, Brendan P.; Jones, Kevin; Wang, George T.

Abstract not provided.