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Mechanism of homogeneous Ir(III) catalyzed regioselective arylation of olefins

Proposed for publication in the Journal of the American Chemical Society.

Muller, Richard P.

The mechanism of hydroarylation of olefins by a homogeneous Ph-Ir(acac){sub 2}(L) catalyst is elucidated by first principles quantum mechanical methods (DFT), with particular emphasis on activation of the catalyst, catalytic cycle, and interpretation of experimental observations. On the basis of this mechanism, we suggest new catalysts expected to have improved activity. Initiation of the catalyst from the inert trans-form into the active cis-form occurs through a dissociative pathway with a calculated {Delta}H(0 K){sub {+-}} = 35.1 kcal/mol and {Delta}G(298 K){sub {+-}} = 26.1 kcal/mol. The catalytic cycle features two key steps, 1,2-olefin insertion and C?H activation via a novel mechanism, oxidative hydrogen migration. The olefin insertion is found to be rate determining, with a calculated {Delta}H(0 K){sub {+-}} = 27.0 kcal/mol and {Delta}G(298 K){sub {+-}} = 29.3 kcal/mol. The activation energy increases with increased electron density on the coordinating olefin, as well as increased electron-donating character in the ligand system. The regioselectivity is shown to depend on the electronic and steric characteristics of the olefin, with steric bulk and electron withdrawing character favoring linear product formation. Activation of the C?H bond occurs in a concerted fashion through a novel transition structure best described as an oxidative hydrogen migration. The character of the transition structure is seven coordinate Ir{sup V}, with a full bond formed between the migrating hydrogen and iridium. Several experimental observations are investigated and explained: (a) The nature of L influences the rate of the reaction through a ground-state effect. (b) The lack of {beta}-hydride products is due to kinetic factors, although {beta}-hydride elimination is calculated to be facile, all further reactions are kinetically inaccessible. (c) Inhibition by excess olefin is caused by competitive binding of olefin and aryl starting materials during the catalytic cycle in a statistical fashion. On the basis of this insertion-oxidative hydrogen transfer mechanism we suggest that electron-withdrawing substituents on the acac ligands, such as trifluoromethyl groups, are good modifications for catalysts with higher activity.

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Finite element methods for nonlinear acoustics in fluids

Proposed for publication in the Journal of Computational Acoustics.

Walsh, Timothy W.

In this paper, weak formulations and finite element discretizations of the governing partial differential equations of three-dimensional nonlinear acoustics in absorbing fluids are presented. The fluid equations are considered in an Eulerian framework, rather than a displacement framework, since in the latter case the corresponding finite element formulations suffer from spurious modes and numerical instabilities. When taken with the governing partial differential equations of a solid body and the continuity conditions, a coupled formulation is derived. The change in solid/fluid interface conditions when going from a linear acoustic fluid to a nonlinear acoustic fluid is demonstrated. Finite element discretizations of the coupled problem are then derived, and verification examples are presented that demonstrate the correctness of the implementations. We demonstrate that the time step size necessary to resolve the wave decreases as steepening occurs. Finally, simulation results are presented on a resonating acoustic cavity, and a coupled elastic/acoustic system consisting of a fluid-filled spherical tank.

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Calculations and measurements of contact resistance of semi-transparent Ni/Pd contacts to p-GaN

Proposed for publication in the Journal of Electronic Materials.

Bogart, Katherine B.

Calculations of specific contact resistance as a function of doping and barrier height were performed for p-type GaN. These calculations took into account two valence bands, each with different effective masses, and show that at low doping, the heavy hole band accounts for most of the conduction, whereas at heavier doping, the light hole band dominates conduction. These calculations also indicate the barrier height for typical contacts to p-GaN is between 0.75 eV and 1 eV. Specific contact resistance measurements were made for oxidized Ni/Au, Pd, and oxidized Ni/Pd ohmic contact metal schemes to p-GaN. The Ni/Pd contact had the lowest specific contact resistance, 6 x 10{sup -4} {Omega} cm{sup 2}. Auger sputter depth profile analysis showed some Ni diffused away from the GaN surface to the contact surface with the bulk of the Pd located in between two areas of Ni. Both Ni and Pd interdiffused with the GaN at the semiconductor surface. The majority of the oxygen observed was with the Ni as NiO. Angle-resolved-x-ray photoelectron spectroscopy (AR-XPS) analyses showed the formation of predominantly NiO and PdO species, with higher Ni and Pd oxides at the contact surface.

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Results 84501–84525 of 96,771
Results 84501–84525 of 96,771