Publications Details

Trapping characteristics and parametric shifts in lateral GaN HEMTs with SiO2/AlGaN gate stacks

King, Michael P.; Dickerson, Jeramy; Dasgupta, S.; Marinella, Matthew; Kaplar, Robert; Piedra, D.; Sun, M.; Palacios, T.

Recovery transients following blocking-state voltage stress are analyzed for two types of AlGaN/GaN HEMTs, one set of devices with thick AlGaN barrier layers and another with recessed-gate geometry and ALD SiO2 gate dielectric. Results show temperature-invariant emission processes are present in both devices. Recessed-gate devices with SiO2 dielectrics are observed to exhibit simultaneous trapping and emission processes during post-stress recovery.