Publications Details

Growth and characterization of ferromagnetic Ga₂O₃:(Cr, Mn)

Sapkota, Keshab R.; Wang, George T.; Addamane, Sadhvikas J.; Lu, Tzu M.; Zhao, Hongping; Monson, Todd; Pearce, Charles J.; Sharps, Paul

The goal of this Exploratory Express project was to explore the possibility of tunable ferromagnetism in Mn or Cr incorporated epitaxial Ga₂O₃ films. Tunability of magnetic properties can enable novel applications in spintronics, quantum computing, and magnetism-based logics by allowing control of magnetism down to the nanoscale. Carriers (electrons or holes) mediated ferromagnetic ordering in semiconductor can lead to tunable ferromagnetism by leveraging the tunability of carrier density with doping level, gate electric field, or optical pumping of the carriers. The magnetic ions (Cr or Mn) in Ga₂O₃ act as localized spin centers which can potentially be magnetically coupled through conduction electrons to enable ferromagnetic ordering. Here we investigated tunable ferromagnetism in beta Ga₂O₃ semiconductor host with various n-doping levels by incorporating 2.4 atomic percent Mn or Cr. The R&D approach involved growth of epitaxial Ga₂O₃ film on sapphire or Ga₂O₃ substrate, implantation of Mn or Cr ions, annealing of the samples post implantation, and magnetic measurements. We studied magnetic behavior of Mn:Ga₂O₃ as a function of different n-doping levels and various annealing temperatures. The vibrating sample magnetometry (VSM) measurement exhibited strong ferromagnetic signals from the annealed Mn:Ga₂O₃ sample with n-doping level of 5E19 cm^-3. This ferromagnetic behavior disappears from Mn:Ga₂O₃ when the n-doping level is reduced to 5E16 cm^-3. Although these results are to be further verified by other measurement schemes due to the observation of background ferromagnetism from the growth substrate, these results indicate the possibility of tunable ferromagnetism in Mn:Ga₂O₃ mediated by conduction electrons.