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Characterization of enhancement-mode two-channel triple quantum dot device fabricated from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure

Luhman, Dwight R.; Studenikin, S.A.; Austing, D.G.; Guadreau, L.; Sacharjda, A.S.; Lu, Tzu-Ming L.; Bethke, Donald T.; Wanke, Michael W.; Lilly, Michael L.; Carroll, Malcolm

Abstract not provided.