HgBa{sub 2}CaCu{sub 2}O{sub 6+{delta}} (Hg-1212) thin films were fabricated by exchanging the TI cations in TlBa{sub 2}CaCu{sub 2}O{sub 7-{delta}} (Tl-1212) thin films with Hg cations, causing a 30-K increase in Tc. To determine how this exchange effects such a Tc increase, the irreversibility lines, temperature dependence of critical current density, and temperature dependence of Hall angle of Hg-1212 and T1-1212 thin films were measured and then compared. The results strongly suggest that the Tc shift is caused by a doubling of charge carrier density.
Disruptive technologies are scientific discoveries that break through the usual product technology capabilities and provide a basis for a new competitive paradigm as described by Anderson and Tushman [1990], Tushman and Rosenkopf [1992], and Bower and Christensen [1995]. Discontinuous innovations are products/processes/services that provide exponential improvements in the value received by the customer much in the same vein as Walsh [1996], Lynn, Morone and Paulson [1996], and Veryzer [1998]. For more on definitions of disruptive technologies and discontinuous innovations, see Walsh and Linton [1999] who provide a number of definitions for disruptive technologies and discontinuous innovations. Disruptive technologies and discontinuous innovations present a unique challenge and opportunity for R and D organizations seeking to build their commercialization efforts and to reinvent the corporation. These technologies do not have a proven path from scientific discovery to mass production and therefore require novel approaches. These critically important technologies are the wellspring of wealth creation and new competency generation but are not readily accepted by the corporate community. They are alternatively embraced and eschewed by the commercial community. They are finally accepted when the technology has already affected the industry or when the technological horse has already flown out of the hanger. Many firms, especially larger firms, seem reluctant to familiarize themselves with these technologies quickly. The trend seems to be that these firms prefer to react to a proven disruptive technology that has changed the product market paradigm. If true, then there is cause for concern. This paper will review the literature on disruptive technologies presenting a model of the progression from scientific idea to mass production for disruptive technologies contrasted to the more copious incremental technologies. The paper will then describe Sandia National Laboratories' involvement in one of the disruptive technology areas, namely micro-electromechanical systems (sometimes referred to as Microsystems or MEMS) and will survey a number of companies that have investigated Sandia's technological discoveries for potential use in an industrial capacity. The survey will focus on the movement of the research findings from the laboratory into the marketplace and all of the problem areas that disruptive technologies face in this arena. The paper will then state several hypotheses that will be tested. The data will be described with results and conclusions reported.
Numerical calculations have been performed to investigate the role that load thickness may play in the performance of fast annular z pinch implosions. In particular, the effects of load thickness on the mitigation of the magnetically-driven Rayleigh-Taylor (RT) instability and energy coupling between the load and generator are addressed. using parameters representative of the Z accelerator [R.B.Spielman et al., Phys.Plasmas, 5, 2105 (1998)] at Sandia National Laboratories, two dimensional magnetohydrodynamic (MHD) simulations show that increased shell thickness results in lower amplitude, slightly longer wavelength RT modes. In addition, there appears to be an optimum in load velocity which is directly associated with the thickness of the sheath and subsequent RT growth. Thin, annular loads, which should couple efficiently to the accelerator, show a large reduction in implosion velocity due to extreme RT development and increased load inductance. As a consequence, thicker loads on the order of 5 mm, couple almost as efficiently to the generator since the RT growth is reduced. This suggests that z-pinch loads can be tailored for different applications, depending on the need for uniformity or high powers.
The relationships between fundamental interfacial interactions, energy dissipation mechanisms, and fracture stress or fracture toughness in a glassy thermoset/inorganic solid joint are not well understood. This subject is addressed with a model system involving an epoxy adhesive on a polished silicon wafer containing its native oxide. The proportions of physical and chemical interactions at the interface, and the in-plane distribution, are varied using self-assembling monolayers of octadecyltrichlorosilane (ODTS). The epoxy interacts strongly with the bare silicon oxide surface, but forms only a very weak interface with the methylated tails of the ODTS monolayer. The fracture stress is examined as a function of ODTS coverage in the napkin-ring (pure shear) loading geometry. The relationship between fracture stress and ODTS coverage is catastrophic, with a large change in fracture stress occurring over a narrow range of ODTS coverage. This transition in fracture stress does not correspond to a wetting transition of the epoxy. Rather, the transition in fracture stress corresponds to the onset of deformation in the epoxy, or the transition from brittle to ductile fracture. The authors postulate that the transition in fracture stress occurs when the local stress that the interface can support becomes comparable to the yield stress of the epoxy. The fracture results are independent of whether the ODTS deposition occurs by island growth (T{sub dep} = 10 C) or by homogeneous growth (T{sub dep} = 24 C).
The adsorption of the strong polyelectrolyte polystyrene sulfonate (PSS) to the air surface of dilute aqueous solutions was investigated as a function of molecular weight and salt concentration. Detailed segment profiles of the deuterated polymer were determined by neutron reflection. Surface activity was also examined through surface tension measurements. In general, the segment profiles are composed of a thin layer (10--20 {angstrom} thick) of high concentration at the air surface, followed by a distinct second layer of much lower segment concentration that extends to larger depths into the liquid. The high segment density at the air surface is due to a strong surface attraction, arising from the low surface tension of the PSS backbone relative to the surface tension of water. At low salt concentration, the profiles tend toward a single dense layer, suggesting that the chains lie nearly flat at the interface in that limit. The adsorbed amount increases with salt concentration, with a stronger dependence for higher molecular weight chains. The adsorbed amounts at the air/water interface are higher than reported previously for PSS adsorbed onto neutral solid surfaces, consistent with the fact that the air-liquid interface provides a stronger surface attraction. While the trends of adsorbed amount and layer thickness with salt concentration and molecular weight are in good agreement with numerical self-consistent field lattice calculations, the measured bilayer profiles are rather different from the smoothly decaying theoretical profiles. The surface tensions of the PSS solutions are significantly lowered relative to those of pure salt solutions. Combining the reflectivity and surface tension measurements, an approximately linear relationship is established between the surface pressure and the PSS adsorbed amount.
Development of next generation high efficiency space monolithic multifunction solar cells will involve the development of new materials lattice matched to GaAs. One promising material is 1.05 eV InGaAsN, to be used in a four junction GaInP{sub 2}/GaAs/InGaAsN/Ge device. The AMO theoretical efficiency of such a device is 38--42%. Development of the 1.05 eV InGaAsN material for photovoltaic applications, however, has been difficult. Low electron mobilities and short minority carrier lifetimes have resulted in short minority carrier diffusion lengths. Increasing the nitrogen incorporation decreases the minority carrier lifetime. The authors are looking at a more modest proposal, developing 1.25 eV InGaAsN for a triple junction GaInP{sub 2}/InGaAsN/Ge device. The AMO theoretical efficiency of this device is 30--34%. Less nitrogen and indium are required to lower the bandgap to 1.25 eV and maintain the lattice matching to GaAs. Hence, development and optimization of the 1.25 eV material for photovoltaic devices should be easier than that for the 1.05 eV material.
Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.
In Inertial Fusion Energy (IFE), Target Chamber Dynamics (TCD) is an integral part of the target chamber design and performance. TCD includes target output deposition of target x-rays, ions and neutrons in target chamber gases and structures, vaporization and melting of target chamber materials, radiation-hydrodynamics in target chamber vapors and gases, and chamber conditions at the time of target and beam injections. Pulsed power provides a unique environment for IFE-TCD validation experiments in two important ways: they do not require the very clean conditions which lasers need and they currently provide large x-ray and ion energies.
In this paper, the advantages and disadvantages of inelastic analysis are discussed. Example calculations and designs showing the implications and significance of factors affecting inelastic analysis are given. From the results described in this paper it can be seen that inelastic analysis provides an improved method for the design of casks. It can also be seen that additional code and standards work is needed to give designers guidance in the use of inelastic analysis. Development of these codes and standards is an area where there is a definite need for additional work. The authors hope that this paper will help to define the areas where that need is most acute.
Meso-scale manufacturing processes are bridging the gap between silicon-based MEMS processes and conventional miniature machining. These processes can fabricate two and three-dimensional parts having micron size features in traditional materials such as stainless steels, rare earth magnets, ceramics, and glass. Meso-scale processes that are currently available include, focused ion beam sputtering, micro-milling, micro-turning, excimer laser ablation, femto-second laser ablation, and micro electro discharge machining. These meso-scale processes employ subtractive machining technologies (i.e., material removal), unlike LIGA, which is an additive meso-scale process. Meso-scale processes have different material capabilities and machining performance specifications. Machining performance specifications of interest include minimum feature size, feature tolerance, feature location accuracy, surface finish, and material removal rate. Sandia National Laboratories is developing meso-scale electro-mechanical components, which require meso-scale parts that move relative to one another. The meso-scale parts fabricated by subtractive meso-scale manufacturing processes have unique tribology issues because of the variety of materials and the surface conditions produced by the different meso-scale manufacturing processes.
Using a micro-Contact Printing ({mu}-CP) technique, substrates are prepared with patterns of hydrophilic, hydroxyl-terminated SAMS and hydrophobic methyl-terminated SAMS. Beginning with a homogeneous solution of silica, surfactant, ethanol, water, and functional silane, preferential ethanol evaporation during dip-coating, causes water enrichment and selective de-wetting of the hydrophobic SAMS. Correspondingly, film deposition occurs exclusively on the patterned hydrophilic SAMS. In addition, by co-condensation of tetrafunctional silanes (Si(OR){sub 4}) with tri-functional organosilanes ((RO){sub 3}Si(CH{sub 2}){sub 3}NH{sub 2}), the authors have selectively derived the silica framework with functional amine NH{sub 2} groups. A pH sensitive, micro-fluidic system was formed by further conjugation reactions with pH sensitive dye molecules.
Electronic components and micro-sensors utilize ceramic substrates, copper and aluminum interconnect and silicon. The joining of these combinations require pre-metallization such that solders with fluxes can wet such combinations of metals and ceramics. The paper will present a new solder alloy that can bond metals, ceramics and composites. The alloy directly wets and bonds in air without the use flux or premetallized layers. The paper will present typical processing steps and joint microstructures in copper, aluminum, aluminum oxide, aluminum nitride, and silicon joints.
Recent observations show that the thermal boundary conditions within large-scale fires are significantly affected by the presence of thermally massive objects. These objects cool the soot and gas near their surfaces, and these effects reduce the incoming radiant heat-flux to values lower than the levels expected from simple {sigma}T{sub fire}{sup 4} models. They also affect the flow and temperature fields in the fire far from their surfaces. The Cask Analysis Fire Environment (CAFE) code has been developed at Sandia National Laboratories to provide an enhanced fire boundary condition for the design of radioactive material packages. CAFE is a set of computer subroutines that use computational fluid mechanics methods to predict convective heat transfer and mixing. It also includes models for fuel and oxygen transport, chemical reaction, and participating-media radiation heat transfer. This code uses two-dimensional computational models so that it has reasonably short turnaround times on standard workstations and is well suited for design and risk studies. In this paper, CAFE is coupled with a commercial finite-element program to model a large cylindrical calorimeter fully engulfed in a pool fire. The time-dependent heat-flux to the calorimeter and the calorimeter surface temperature are determined for several locations around the calorimeter circumference. The variation of heat-flux with location is determined for calorimeters with different diameters and wall thickness, and the observed effects discussed.
The authors report a new type of oscillations in magnetoresistance observed in high-mobility two-dimensional electron gas (2DEG), in GaAs-AIGaAs heterostructures. Being periodic in 1/B these oscillations appear in weak magnetic field (B < 0.3 T) and only in a narrow temperature range (3 K < T < 7 K). Remarkably, these oscillations can be understood in terms of magneto-phonon resonance originating from the interaction of 2DEG and leaky interface-acoustic phonon modes. The existence of such modes on the GaAs:AIGaAs interface is demonstrated theoretically and their velocities are calculated. It is shown that the electron-phonon scattering matrix element exhibits a peak for the phonons carrying momentum q = 2k{sub F} (k{sub F} is the Fermi wave-vector of 2DEG).
The conduction band minimum formation of GaAs{sub 0.5{minus}y}P{sub 0.5{minus}y}N{sub 2y} is investigated for small nitrogen compositions (0.1% < 2y < 1.0%), by using a pseudopotential technique. This formation is caused by two unusual processes both involving the deep-gap impurity level existing in the dilute alloy limit y {r_arrow} 0. The first process is an anticrossing with the {Gamma}{sub Ic}-like extended state of GaAs{sub 0.5}P{sub 0.5}. The second process is an interaction with other impurity levels forming a subband. These two processes are expected to occur in any alloys exhibiting a deep-gap impurity level at one of its dilute limit.
The effect of lateral composition modulation, spontaneously generated during the epitaxial growth of a AlAs/InAs short-period superlattice, on the electronic band structure is investigated using photo-transmission and photoluminescence spectroscopy. Compared with uniform layers of similar average composition, the presence of the composition modulation considerably reduces the band gap energy and produces strongly polarized emission and absorption spectra. The authors demonstrate that the dominant polarization can selectively be aligned along the [{bar 1}10] or [010] crystallographic directions. In compressively strained samples, the use of (001) InP substrates slightly miscut toward [111]A or [101] resulted in modulation directions along [110] or [100], respectively, and dominant polarizations along a direction orthogonal to the respective composition modulation. Band gap reduction as high as 350 meV and 310 meV are obtained for samples with composition modulation along [110] and [100], respectively. Polarization ratios up to 26 are observed in transmission spectra.
Se-intercalated graphite compounds (Se-GICs) are considered as promising candidates for room-temperature thermoelectric cooling devices. Here the authors analyze the crystallographic structure and electronic properties of these materials within the framework of density-functional theory. First, the Adaptive-Coordinate Real-space Electronic Structure (ACRES) code is used to determine the stable structure of a representative stage-2 Se-GIC by relaxing atomic positions. The stable configuration is found to be a pendant-type structure, in which each selenium is bonded covalently to two atoms within the same carbon layer, causing a local distortion of the in-plane conjugation of the graphite. Then, they use the full potential linearized augmented plane wave (FP-LAPW) method to calculate the electronic band structure of the material and discuss its properties. Near the Fermi energy E{sub F}, there are wide bands originating from the host graphitic electronic structure and a few very narrow bands mainly of Se 4p character. The latter bands contribute to high peaks in the density of states close to E{sub F}. They show that this feature, although typical of many good thermoelectrics, does not necessarily imply high thermopower in the case of Se-GICs.
Failure models based on the Palmgren-Miner concept that material damage is cumulative have been derived and used mainly for fatigue life predictions for metals and composite materials. The authors review the principles underlying such models and suggest ways in which they may be best applied to polymeric materials in temperature environments. They first outline expectations when polymer degradation data can be rigorously time-temperature superposed over a given temperature range. For a step change in temperature after damage has occurred at an initial temperature in this range, the authors show that the remaining lifetime at the second temperature should be linearly related to the aging time prior to the step. This predicted linearity implies that it should be possible to estimate the remaining and therefore the service lifetime of polymers by completing the aging at an accelerated temperature. They refer to this generic temperature-step method as the Wear-out approach. They next outline the expectations for Wear-out experiments when time-temperature superposition is invalid. Experimental Wear-out results are then analyzed for one material where time-temperature superposition is valid and for another where evidence suggests it is invalid. In analyzing the data, they introduce a procedure that they refer to as time-degradation superposition. This procedure not only utilizes all of the experimental data instead of a single point from each data set, but also allows them to determine the importance of any interaction effects.
In-plane magnetic field photoluminescence spectra from n series of n-type modulation doped GaAs/Al{sub 0.3}Ga{sub 0.7}As coupled double quantum wells show distinctive doublet structures related to the tunnel-split ground sub-level states. The magnetic field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In a lower mobility sample, the transition energy displays an N-type kink with field (namely a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is attributed to a coupling mechanism due to homogeneous broadening of the electron and hole states. The results are in good agreement with recent theoretical calculations.
Micro-Electro-Mechanical Systems (MEMS) is a big name for tiny devices that will soon make big changes in everyday life and the workplace. These and other types of Microsystems range in size from a few millimeters to a few microns, much smaller than a human hair. These Microsystems have the capability to enable new ways to solve problems in commercial applications ranging from automotive, aerospace, telecommunications, manufacturing equipment, medical diagnostics to robotics, and in national security applications such as nuclear weapons safety and security, battlefield intelligence, and protection against chemical and biological weapons. This broad range of applications of Microsystems reflects the broad capabilities of future Microsystems to provide the ability to sense, think, act, and communicate, all in a single integrated package. Microsystems have been called the next silicon revolution, but like many revolutions, they incorporate more elements than their predecessors. Microsystems do include MEMS components fabricated from polycrystalline silicon processed using techniques similar to those used in the manufacture of integrated electrical circuits. They also include optoelectronic components made from gallium arsenide and other semiconducting compounds from the III-V groups of the periodic table. Microsystems components are also being made from pure metals and metal alloys using the LIGA process, which utilizes lithography, etching, and casting at the micron scale. Generically, Microsystems are micron scale, integrated systems that have the potential to combine the ability to sense light, heat, pressure, acceleration, vibration, and chemicals with the ability to process the collected data using CMOS circuitry, execute an electrical, mechanical, or photonic response, and communicate either optically or with microwaves.
Commercial focused ion beam (FIB) systems are commonly used to image integrated circuits (ICS) after device processing, especially in failure analysis applications. FIB systems are also often employed to repair faults in metal lines for otherwise functioning ICS, and are being evaluated for applications in film deposition and nanofabrication. A problem that is often seen in FIB imaging and repair is that ICS can be damaged during the exposure process. This can result in degraded response or out-right circuit failure. Because FIB processes typically require the surface of an IC to be exposed to an intense beam of 30--50 keV Ga{sup +} ions, both charging and secondary radiation damage are potential concerns. In previous studies, both types of effects have been suggested as possible causes of device degradation, depending on the type of device examined and/or the bias conditions. Understanding the causes of this damage is important for ICS that are imaged or repaired by a FIB between manufacture and operation, since the performance and reliability of a given IC is otherwise at risk in subsequent system application. In this summary, the authors discuss the relative roles of radiation damage and charging effects during FIB imaging. Data from exposures of packaged parts under controlled bias indicate the possibility for secondary radiation damage during FIB exposure. On the other hand, FIB exposure of unbiased wafers (a more common application) typically results in damage caused by high-voltage stress or electrostatic discharge. Implications for FIB exposure and subsequent IC use are discussed.
Erbium hydride thin films are grown onto polished, a-axis {alpha} Al{sub 2}O{sub 3} (sapphire) substrates by reactive ion beam sputtering and analyzed to determine composition, phase and microstructure. Erbium is sputtered while maintaining a H{sub 2} partial pressure of 1.4 x 10{sup {minus}4} Torr. Growth is conducted at several substrate temperatures between 30 and 500 C. Rutherford backscattering spectrometry (RBS) and elastic recoil detection analyses after deposition show that the H/Er areal density ratio is approximately 3:1 for growth temperatures of 30, 150 and 275 C, while for growth above {approximately}430 C, the ratio of hydrogen to metal is closer to 2:1. However, x-ray diffraction shows that all films have a cubic metal sublattice structure corresponding to that of ErH{sub 2}. RBS and Auger electron that sputtered erbium hydride thin films are relatively free of impurities.
Processes that involve particle-laden fluids are common in geomechanics and especially in the petroleum industry. Understanding the physics of these processes and the ability to predict their behavior requires the development of coupled fluid-flow and particle-motion computational methods. This paper outlines an accurate and robust coupled computational scheme using the lattice-Boltzmann method for fluid flow and the discrete-element method for solid particle motion. Results from several two-dimensional validation simulations are presented. Simulations reported include the sedimentation of an ellipse, a disc and two interacting discs in a closed column of fluid. The recently discovered phenomenon of drafting, kissing, and tumbling is fully reproduced in the two-disc simulation.
Calculations of the Hamaker constants representing the van der Waals interactions between conductor, resistor and dielectric materials are performed using Lifshitz theory. The calculation of the parameters for the Ninham-Parsegian relationship for several non-aqueous liquids has been derived based on literature dielectric data. Discussion of the role of van der Waals forces in the dispersion of particles is given for understanding paste formulation. Experimental measurements of viscosity are presented to show the role of dispersant truncation of attractive van der Waals forces.